DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise 3.8 MIN. : NF = 1.6 dB TYP. @ f = 2.0 GHz 3.8 MIN. C • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz B UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V IC 65 mA PT (TC = 25 °C) 580 mW Junction Temperature Tj 200 °C Storage Temperature Tstg -65 to +150 °C Collector Current Total Power Dissipation PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 E φ 2.1 0.55 RATING 45 ° 0.1+0.06 -0.03 SYMBOL 3.8 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER 0.5 ± 0.05 3.8 MIN. E 1.8 MAX. The 2SC3604 is an NPN epitaxial transistor designed for low- ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL TEST CONDITIONS Collector Cut-off Current ICBO VCB = 10 V, IE = 0 Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 DC Current Gain hFE VCE = 8 V, IC = 20 mA Pulse Gain Bandwidth Product Reverse Transfer Capacitance fT 50 VCE = 8 V, IC = 20 mA TYP. 100 MAX. UNIT 1.0 µA 1.0 µA 250 8 GHz VCB = 10 V, IE = 0, f = 1 MHz 0.2 0.7 pF Noise Figure NFNote VCE = 8 V, IC = 7 mA, f = 2.0 GHz 1.6 2.3 dB Insertion Gain |S21e|2 VCE = 8 V, IC = 20 mA, f = 2.0 GHz Maximum Available Gain MAG GA Power Gain Document No. P11675EJ2V0DS00 (2nd edition) Date Published August 1996 P Printed in Japan Cre MIN. 9.0 11 dB VCE = 8 V, IC = 20 mA, f = 2.0 GHz 13 dB VCE = 8 V, IC = 7 mA, f = 2.0 GHz 12 dB © 1996 2SC3604 Note Test block diagram Coax. SW Coax. SW Noise Diode Stub Tuner Transistor Under Test Bias Tee Post Amp Bias Tee Mixer NF Meter Network Analyzer * Coax. SW * Sweeper To test 1 GHz or lower, insert a bandpass filter. TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE MAG AND INSERTION GAIN vs. FREQUENCY 0.8 VCE = 8 V IC = 20 mA with heat sink 0.6 Rth(j−e) 90 °C/W 0.4 Rth(j−a) 590 °C/W 0.2 0 50 3 15 |S21e|2 10 5 0 0.2 0.5 1 2 TA - Ambient Temperature - °C f - Frequency - GHz REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 5 10 VCE = 8 V f = 1.0 MHz 2 1 0.7 0.5 0.3 100 50 20 0.2 10 0.5 0.1 1 2 3 5 7 10 20 VCB - Collector to Base Voltage -V 2 MAG 20 −5 0.1 200 150 100 hFE - DC Current Gain Cre - Reverse Transfer Capacitance - pF |S21e|2 - Insertion Gain - dB MAG - Maximum Available Gain - dB PT - Total Power Dissipation - W 25 30 1 5 10 IC - Collector Current - mA 50 2SC3604 INSERTION GAIN vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 8 V f = 2 GHz f = 2 GHz 10 5 NF - Noise Figure -dB |S21e|2 - Insertion Gain - dB 15 3 GHz 4 GHz 5 4 3 2 VCE = 8 V 0 0.5 1 5 10 50 70 1 2 IC - Collector Current - mA 5 10 20 50 IC - Collector Current - mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 fT - Gain Bandwidth Product - GHz VCE = 8 V 20 10 7 5 3 2 1 2 3 5 7 10 IC - Collector Current - mA 20 30 S PARAMETER VCE = 6 V, IC = 10 mA, ZO = 50 Ω f (MHz) |S11| ∠S11 |S21| ∠S21 |S12| ∠S12 |S22| ∠S22 500 1000 .463 .432 -125.3 -162.7 13.822 7.901 106.8 86.2 .027 .0424 37.9 48.2 .516 .463 -36.6 -40.7 1500 2000 .416 .439 178.7 165.0 5.250 3.949 71.1 59.7 .0606 .0758 53.1 52.0 .421 .396 -46.2 -50.9 2500 3000 .451 .470 153.6 143.6 3.151 2.809 51.7 39.6 .097 .111 49.3 45.1 .372 .345 -56.5 -63.7 3500 4000 .482 .494 135.2 129.1 2.337 2.022 28.6 21.3 .124 .132 39.5 35.5 .320 .321 -73.2 -82.0 3 2SC3604 S PARAMETER O 1.2 1.0 0.9 4 T +J ANC E ZO X 0. AC RE 0.3 TI V E 0.8 5.0 1. 8 0. 0.6 0.2 0.1 0.4 20 50 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1.2 20 50 0.1 0.2 10 O MP CO E C AN 0 T AC RE JX - O Z 0 2.0 5 I 1.8 1.2 1.6 0.35 1.0 1.4 0.15 -80 0.14 0.36 0.9 -70 -90 0.12 0.13 0.38 0.37 0.11 -100 0.39 0.7 0 4 0.3 6 0.1 - -11 0 0.10 12 0 0.4 1 0.0 9 0. 0. -6 0.8 3 0.3 7 0.1 0.2 0.6 18 32 AT 4 -1 VE 0. 0. EG 06 M 0.4 2 0.0 8 0. 43 0. 07 -1 30 0 1. T 0.4 0 -5 -16 N NE 0.6 31 0. 19 0. 4 .4 0.8 3. 0 4 VE 0.0 WA 50 -1 1.0 0.4 9 5 0.4 5 0.0 4.0 1 0.2 0.2 -4 0 0.40 120° 0.3 0 0.2 0 4 0. S22e 0 0.3 0.5 GHz 0.2 8 0.2 2 -20 0.5 GHz 5.0 0.48 0.02 8 0. 4 GHz 0.27 0.23 0.6 0.2 0.26 -10 0.4 0.25 0.2 0.1 50 0.24 RESTSTANCE COMPONENT R ZO 0.24 S11e 0.25 20 0.26 10 -3 6 4.0 1.0 0 ME GA 4 GHz 0.23 0.49 0 3. 0.6 0 0 1.8 0.4 10 0 2.0 5 0. NT C 14 0 NE 18 32 0.27 GTHS PO 0. 0. 50 20 0.01 0.2 2 0.2 8 0.2 0.48 AD R D LO OWA 3 E F L E C T I O N C O E F FI C IE N T IN DE G 0.0 GTHS TNGLE OF R REE 0A LEN M 0.1 7 0.3 3 1 0.2 9 0.2 0.01 60 0 .47 70 0.2 TO W 0.02 RRD GE N 0.0 ELAT 3 OR 0.4 0.0 7 4 S 0.4 0.0 6 5 15 0.4 0 5 0. 44 0. 06 0 13 S12e − FREQUENCY VCC = 8 V IC = 20 mA 500 MHz Step 90° 0.1 6 0.3 4 0.35 30 W A V ELEN 80 0 0.5 GHz 0.36 90 100 VCE = 8 V IC = 20 mA 500 MHz Step 0.15 0.3 S21e − FREQUENCY 0.14 40 0 0.37 19 0. 31 0. 0.49 0.13 0.35 0.6 43 0. 0 12 0.12 0.39 110 0.8 7 0 0. 9 0.0 1 0.4 0.7 8 0.0 2 0.4 0.11 0.10 0.40 1.4 S11e, S22e − FREQUENCY 90° VCE = 8 V IC = 20 mA 500 MHz Step 120° 60° 60° 4 GHz 150° 150° 30° 30° 0.5 GHz 4 GHz 180° 5 −150° −30° −120° −60° −90° 4 0° 10 180° 0.05 0° 0.1 −150° −30° −120° −60° −90° 2SC3604 MARKING Because the package of the micro X package transistor is too small to be marked, the following indication is employed. Part Number Part Number Marking Part Number Marking 2SC2148 A 2SC3603 0 2SC2149 B 2SC3604 2 2SC2150 C 2SC3587 1 2SC2367 H 2SC2585 K 2SC1223 D E C B Aa Lot Part number E Lot Lot indication is colored as shown below. The sequence black, brown, red, blue, and green, forms one cycle and this cycle is repeated. Year Month 1988 1989 1990 1991 1992 1993 1994 1995 1996 1 j Black v h t f r d p b 2 k w i u g s e q c 3 l x j v h t f r d 4 m y k w i u g s e 5 n z l x j v h t f 6 o a Brown m y k w i u g 7 p b n z l x j v h 8 q c o a Red m y k w i 9 r d p b n z l x j 10 s e q c o a Blue m y k 11 t f r d p b n z l 12 u g s e q c o a Green m 5 2SC3604 [MEMO] 6 2SC3604 [MEMO] 7 2SC3604 The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6