GaAs MMICs GN01081B GaAs IC (with built-in ferroelectric) Driver amplifier for PCS +0.1 10-0.2–0.05 unit: mm Unit VDD Symbol 8 V Circuit current IDD 100 mA Max input power Pin −5 dBm Allowable power dissipation PD 450 mW Operating ambient temperature Topr −30 to +90 °C Storage temperature Tstg −40 to +120 °C 1.1±0.2 Parameter 2-0.55±0.1 2~12˚ Detail of Part A & B Part A 2.2±0.2 3.4±0.2 2~12˚ 4.0±0.2 10-0.15±0.05 9 8 7 6 3.45±0.1 Ratings Power supply voltage 2-12˚ 2.8±0.2 10 1 2 3 4 5 11 ■ Absolute Maximum Ratings (Ta = 25°C) Part B 2-12˚ ● High output amplifier ● Low distortion 12 12-0~0.2 8-0.5±0.07 ■ Features 0.3±0.1 1: NC 7: VDD1 2: VDD2 8: NC 3: Source2 9: IN1 4: IN2 10: NC 5: NC 11: GND 6: NC 12: GND ESOF-10D Type Package ■ Electrical Characteristics (VDD = 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C) Parameter Symbol Test method Circuit current IDD (1) Power gain PG (1) Adjacent channel leakage power (ACP) 1 Adjacent channel leakage power (ACP) 2 ACP1 ACP2 Conditions min 22 (1) IS − 95 modulation, ±1.25MHz Detuning (2) 30kHz Bandwidth (1) IS − 95 modulation, ±2.25MHz Detuning (2) 30kHz Bandwidth typ max Unit 60 75 mA 25 27 dB −56 −51 dBc −71 −66 dBc Test method (1): Measurement circuit is shown in the following diagram. (2): This item is the sampling guaranteed item. ■ Measurement Circuit VDD1 IN 5.6nH 20Ω 100pF+1000pF 2pF 5.6nH 150Ω 2pF 10 9 8 7 6 12 1.5nH 11 1.5nH 1 2 3 4 5 1pF 33pF OUT 33nH 100pF 10Ω 100pF+47nF VDD2 1 GaAs MMICs GN01081B Pout, ACP Pin Pout, IDD Pin 0 20 60 20 –10 50 15 Pout 10 –20 5 –30 IDD 40 –40 –5 –50 –10 –60 Pout (dBm) ACP 1.25MHz 0 ACP (dBc) Pout (dBm) 10 IDD2 5 30 Pout 1910MHz 1880MHz 1850MHz 20 0 ACP 2.25MHz –20 –30 –80 –25 –20 –15 Pin (dBm) 2 10 –5 –70 –15 –10 –5 0 IDD1 –10 –30 0 –25 –20 –15 Pin (dBm) –10 –5 0 IDD (mA) 15 1910MHz 1880MHz 1850MHz