GaAs MMIC GN01096B GaAs IC (with built-in ferroelectric) Unit: mm 0.12 +0.05 −0.02 ■ Features 0.1 0.2±0.1 1.25±0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 For low noise amplifier of cellular phone Other communication equipment 1 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Receiver amplifier : Low distortion with built-in gain control function 3 2 0.65 0.65 6 - 0° to 10° 0.2 2.0±0.1 Circuit current Symbol Ratings Unit VDD 8 V IDD 20 mA VAGC 0 to 4 V Max input power PIN −5 dBm Allowable power dissipation PD 150 mW Operating ambient temperature Topr −30 to +90 °C Storage temperature Tstg −40 to +120 °C Gate control voltage 0 to 0.1 Parameter Power supply voltage 0.7±0.1 0.9±0.1 ■ Absolute Maximum Ratings Ta=25 °C 1 : RFIN 4 : VDD 2 : GND 5 : GND 3 : VAGC 6 : Source S Mini Type Package (6-pin) EIAJ : SC-88 Marking Symbol : KW ■ Electrical Characteristics VDD=2.9 V, PIN=−25 dBm, Ta=25 °C±3 °C Parameter Symbol Conditions min typ max Unit IDD VAGC=1.5 V, f=850 MHz 6.5 10 mA Power gain 1 *1 PG1 VAGC=1.5 V, f=850 MHz 12.5 15.0 17.5 dB *1 −10.0 Circuit current *1 PG2 VAGC=0.1 V, f=850 MHz −6.5 −3.0 dB Noise figure 1 *1, 2 NF1 VAGC=1.5 V, f=832 MHz f=850 MHz, f=870 MHz 1.4 2.0 dB Noise figure 2 *1, 2 NF2 VAGC=0.1 V, f=832 MHz f=850 MHz, f=870 MHz 17 22 dB Dynamic range *1 DR VAGC=1.5 V to 0.1 V, f=850 MHz 22 27 dB S11 VAGC=1.5 V, f=850 MHz −10 −6 dB S22 VAGC=1.5 V, f=850 MHz −10 −6 dB Power gain 2 Input return loss *1, 2 Output return loss *1, 2 Third input intersept point *1, 2 Third output intersept point *1, 2 18 IIP3 VAGC=1.5 V, f=850 MHz/850.9 MHz 4.0 5.8 dBm OIP3 VAGC=1.5 V, f=850 MHz/850.9 MHz 16.5 21.0 dBm Note) *1 : Refer to measurement circuit. *2 : Design-guaranteed items. 1 GN01096B GaAs MMIC ■ Measurement Circuit 39 nH 82 Ω 0.5 pF 1.4 pF 1000 pF 33 pF 27 nH 100 pF 6 5 4 1 2 3 22 nH 100 pF 5.1 kΩ RFIN 2 10 nF 12 pF VAGC RFOUT