GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER® structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AC (DO-15) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high voltage rectification of power supplies, inverters, converters, freewheeling diodes applications PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 1200 V to 1600 V IFSM 30 A IR 10 μA VF 1.1 V TJ max. 175 °C MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI1-1200GP GI1-1400GP GI1-1600GP UNIT Maximum repetitive peak reverse voltage VRRM 1200 1400 1600 V Maximum RMS voltage VRMS 840 980 1120 V Maximum DC blocking voltage VDC 1200 1400 1600 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88622 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GI1-1200GP thru GI1-1600GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 1.0 A Maximum reverse current Rated VR SYMBOL GI1-1200GP GI1-1400GP TA = 25 °C TA = 100 °C Maximum reverse recovery time IFM = 20 mA, IRM = 2 mA Reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A UNIT 1.1 VF (1) IF = 3.14 A GI1-1600GP V 1.3 10 IR (1) μA 100 trr 25 typical μs 0.7 trr μs maximum 1.5 Maximum forward recovery time IFM = 20 mA tfr 1.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA GI1-1200GP GI1-1400GP (1) GI1-1600GP UNIT 55 °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GI1-1200-E3/54 0.425 54 4000 13" diameter paper tape and reel GI1-1200-E3/73 0.425 73 2000 Ammo pack packaging GI1-1200HE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel GI1-1200HE3/73 (1) 0.425 73 2000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 1.25 1.00 Ipk =π IAV 0.75 0.50 Capacitive Loads 5.0 Ipk = 10 IAV 20 0.25 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.50 8.3 ms Single Half Sine-Wave (JEDEC Method) 40 TA = 25 °C No Load Condition 30 20 TJ = TJ Max. Rated Load Conditions 10 0 0 20 40 60 80 100 120 140 160 180 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88622 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GI1-1200GP thru GI1-1600GP Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C Pulse Width = 300 μs 1 %1 Duty Cycle % Duty Cycle 0.1 0.01 0.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (μA) 10 TJ = 125 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 88622 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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