*R o H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH4BJ Overvoltage Protector Series ITU-T K.20/21 Rating ....................... 8 kV 10/700, 200 A 5/310 SMBJ Package (Top View) High Holding Current ........................................... 225 mA min. Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge Device ‘4165 ‘4180 ‘4200 ‘4265 ‘4300 ‘4350 VDRM V(BO) V 135 145 155 200 230 275 V 165 180 200 265 300 350 R(B) 1 2 T(A) MDXXBG Device Symbol T Rated for International Surge Wave Shapes Waveshape 2/10 µs 8/20 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE ITSP SD4XAA A 500 300 250 200 160 100 R Terminals T and R correspond to the alternative line designators of A and B Low Differential Capacitance ................................. 67 pF max. .............................................. UL Recognized Component Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. How To Order Device TISP4xxxH4BJ Package BJ (J-Bend DO-214AA/SMB) Carrier For Standard For Lead Free Termination Finish Termination Finish Order As Order As Embossed Tape Reeled TISP4xxxH4BJR TISP4xxxH4BJR-S Bulk Pack TISP4xxxH4BJ TISP4xxxH4BJ-S Insert xxx value corresponding to protection voltages of 165 through to 350. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series Description This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, (see Note 1) Symbol ‘4165 ‘4180 ‘4200 ‘4265 ‘4300 ‘4350 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K .20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5. VDRM ITSP Value ±135 ±145 ±155 ±200 ±230 ±275 500 300 250 220 200 200 200 160 100 Unit V A ITSM 55 60 2.1 A diT/dt TJ Tstg 400 -40 to +150 -65 to +150 A/µs °C °C See Applications Information and Figure 10 for voltage values at lower temperatures. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions. See Applications Information and Figure 11 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current VD = VDRM V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A I(BO) VT IH dv/dt ID Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Test Conditions Min. dv/dt = ±750 V/ms, RSOURCE = 300 Ω IT = ±5 A, tW = 100 µs IT = ±5 A, di/dt = -/+30 mA/ms ±0.15 ±0.225 Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = ±50 V f = 100 kHz, Vd = 1 V rms, VD = 0, Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE Max. ±5 ±10 ±165 ±180 ±200 ±265 ±300 ±350 ±174 ±189 ±210 ±276 ±311 ±363 ±0.8 ±3 ±0.8 Unit µA V V A V A kV/µs ±5 TA = 85 °C ‘4165 thru ‘4200 ‘4265 thru ‘4350 ‘4165 thru ‘4200 ‘4265 thru ‘4350 ‘4165 thru ‘4200 ‘4265 thru ‘4350 ‘4165 thru ‘4200 ‘4265 thru ‘4350 ‘4165 thru ‘4200 ‘4265 thru ‘4350 f = 100 kHz, Vd = 1 V rms, VD = -1 V Coff Typ. TA = 25 °C TA = 85 °C ‘4165 ‘4180 ‘4200 ‘4265 ‘4300 ‘4350 ‘4165 ‘4180 ‘4200 ‘4265 ‘4300 ‘4350 ±10 90 84 79 67 74 62 35 28 33 26 µA 80 70 71 60 65 55 30 24 28 22 Typ. Max. Unit pF 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V. Thermal Characteristics Parameter RθJA NOTE Junction to free air thermal resistance Test Conditions Min. EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 113 °C /W 50 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH VDRM -v IDRM ID VD ID IDRM VD VDRM +v IH I(BO) VT V(BO) IT ITSM Quadrant III ITSP Switching Characteristic -i Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PMXXAAB TISP4xxxH4BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TCHAG 100 NORMALIZED BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TC4HAF 1.10 VD = ±50 V Normalized Breakover Voltage |ID| - Off-State Current - µA 10 1 0·1 0·01 1.05 1.00 0.95 0·001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C -25 150 Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 200 150 100 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE Normalized Holding Current IT - On-State Current - A 20 15 10 7 5 4 3 1 TC4HAK 1.5 50 40 30 1 0.7 2.0 TC4HAHA TA = 25 °C tW = 100 µs '4265 THRU '4350 150 Figure 3. 70 2 1.5 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 4. 0.9 0.8 0.7 0.6 0.5 '4165 THRU '4200 1.5 2 3 4 5 V - On-State Voltage - V 1.0 0.4 7 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 5. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series Typical Characteristics 1 TC4HAIA 0.7 0.6 '4165 THRU '4200 0.5 '4265 THRU '4350 0.4 0.3 1 2 3 5 10 20 30 50 VD - Off-state Voltage - V 100150 Figure 6. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. '4300 '4265 '4200 '4180 35 '4165 TJ = 25 °C Vd = 1 Vrms 0.8 C - Differential Off-State Capacitance - pF Capacitance Normalized to V D = 0 TCHAJA 36 0.9 0.2 0.5 DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE '4350 NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE 34 33 ∆C = Coff(-2 V) - Coff(-50 V) 32 31 30 130 150 170 200 230 270 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. 300 TISP4xxxH4BJ Overvoltage Protector Series NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4HAC 30 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) 20 EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 15 10 9 8 7 6 5 4 3 2 1.5 0·1 1 10 100 THERMAL IMPEDANCE vs POWER DURATION 100 70 50 40 30 20 15 10 7 5 4 3 1 0·1 1000 ITSM(t) APPLIED FOR TIME t EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 2 1.5 t - Current Duration - s 1 10 1000 Figure 9. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4HAFA 700 600 0.99 IMPULSE RATING vs AMBIENT TEMPERATURE TC4HAA BELLCORE 2/10 500 400 Impulse Current - A 0.98 Derating Factor 100 t - Power Duration - s Figure 8. 1.00 TI4HAE 150 ZθJA(t) - Transient Thermal Impedance - °C /W ITSM(t) - Non-Repetitive Peak On-State Current - A Typical Characteristics 0.97 '4165 THRU '4200 0.96 0.95 IEC 1.2/50, 8/20 300 FCC 10/160 250 ITU-T 10/700 200 FCC 10/560 150 120 0.94 BELLCORE 10/1000 '4265 THRU '4350 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 10. 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 TA - Ambient Temperature - °C Figure 11. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series APPLICATIONS INFORMATION Deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13). Th3 Th1 Th1 Th2 Figure 12. Two Point Protection Figure 13. Multi-point Protection In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required. Impulse Testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. Standard Peak Voltage Setting V Voltage Waveform µs 2/10 10/1000 10/160 10/560 9/720 † 9/720 † 0.5/700 Peak Current Value A Current Waveform µs TISP4xxxH4 25 °C Rating A Series Resistance Ω 2500 500 2/10 500 0 1000 100 10/1000 100 1500 200 10/160 250 0 800 100 10/560 160 0 FCC Part 68 (March 1998) 1500 37.5 5/320 † 200 0 1000 25 5/320 † 200 0 I3124 1500 37.5 0.2/310 200 0 37.5 1500 5/310 200 0 10/700 ITU-T K.20/K.21 100 4000 † FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 °C to 85 °C. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series APPLICATIONS INFORMATION AC Power Testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure). Capacitance The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. Normal System Voltage Levels The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of -22 °C. In this example, the TISP4265H4BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -22 °C. JESD51 Thermal Measurement Method To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 ” x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series APPLICATIONS INFORMATION Typical Circuits MODEM TIP WIRE RING FUSE R1a RING DETECTOR Th3 HOOK SWITCH TISP4350H4 PROTECTED EQUIPMENT Th1 D.C. SINK Th2 SIGNAL TIP AI6XBPA E.G. LINE CARD R1b RING WIRE AI6XBK Figure 14. Modem Inter-wire Protection Figure 15. Protection Module R1a Th3 SIGNAL Th1 Th2 R1b AI6XBL D.C. Figure 16. ISDN Protection OVERCURRENT PROTECTION TIP WIRE RING/TEST PROTECTION TEST RELAY RING RELAY SLIC RELAY S3a R1a Th3 S1a SLIC PROTECTION Th4 S2a SLIC Th1 Th2 RING WIRE Th5 R1b S3b S1b S2b TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF TEST EQUIPMENT Figure 17. Line NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. RING GENERATOR Card Ring/Test Protection VBAT AI6XBJ TISP4xxxH4BJ Overvoltage Protector Series MECHANICAL DATA Recommended Printed Wiring Footprint SMB Pad Size 2.54 (.100) 2.40 (.094) 2.16 (.085) DIMENSIONS ARE: METRIC (INCHES) MDXXBI Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device TISP4165H4BJ TISP4180H4BJ TISP4200H4BJ TISP4265H4BJ TISP4300H4BJ TISP4350H4BJ Symbolization Code 4165H4 4180H4 4200H4 4265H4 4300H4 4350H4 Carrier Information Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. For Standard Termination Finish Carrier Order As Embossed Tape Reel Pack TISP4xxxH4BJR Bulk Pack TISP4xxxH4BJ For Lead Free Termination Finish Order As TISP4xxxH4BJR-S TISP4xxxH4BJ-S NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protection Series MECHANICAL DATA SMBJ (DO-214AA) This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB 4.06 - 4.57 (.160 - .180) 3.30 - 3.94 (.130 - .155) 2 Index Mark (if needed) DIMENSIONS ARE: METRIC (INCHES) 2.00 - 2.40 (.079 - .094) 0.76 - 1.52 (.030 - .060) 1.90 - 2.10 (.075 - .083) 0.10 - 0.20 (.004 - .008) 1.96 - 2.32 (.077 - .091) 5.21 - 5.59 (.205 - .220) MDXXBHA NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH4BJ Overvoltage Protector Series MECHANICAL DATA Tape Dimensions SMB Package Single-Sprocket Tape 1.55 - 1.65 (.061 - .065) 3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081) 0.40 MAX. (.016) 1.65 - 1.85 (.065 - .073) 5.54 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 7.90 - 8.10 (.311 - .319) Ø 1.50 MIN. (.059) 0 MIN. Carrier Tape Direction of Feed Cover Tape 4.50 MAX. (.177) Embossment 20° Index Mark DIMENSIONS ARE: 8.20 MAX. (.323) Maximium component rotation Typical component cavity center line Typical component center line METRIC (INCHES) NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in.) MIN. to 0.65 mm (.026 in.) MAX. so that the component cannot rotate more than 20 ° within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:- MDXXBJ Reel diameter: 330 ± 3.0 mm (12.99 ± .118 in.) Reel hub diameter 75 mm (2.95 in.) MIN. Reel axial hole: 13.0 ± 0.5 mm (.512 ± .020 in.) C. 3000 devices are on a reel. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.