BAS381, BAS382, BAS383 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 9612315 Applications Mechanical Data • General purpose and switching Schottky barrier diode • HF-Detector • Protection circuit • Diode for low currents with a low supply voltage • Small battery charger • Power supplies • DC/DC converter for notebooks Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10 k per 13" reel (8 mm tape), 10 k/box TR/2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks BAS381 VR = 40 V BAS381-TR3 or BAS381-TR Tape and Reel BAS382 VR = 50 V BAS382-TR3 or BAS382-TR Tape and Reel BAS383 VR = 60 V BAS383-TR3 or BAS383-TR Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Part Symbol Value Unit BAS381 VR 40 V BAS382 VR 50 V BAS383 Peak forward surge current Repetitive peak forward current Forward continuous current Document Number 85503 Rev. 2.0, 23-Jul-10 tp = 1 s VR 60 V IFSM 500 mA IFRM 150 mA IF 30 mA For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAS381, BAS382, BAS383 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Test condition Symbol Value Unit on PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Max. Unit IF = 0.1 mA VF 330 mV Forward voltage IF = 1 mA VF 410 mV IF = 15 mA VF 1000 mV Reverse current VR = VRmax IR 200 nA VR = 1 V, f = 1 MHz CD 1.6 pF Diode capacitance Min. Typ. Typical Characteristics Tamb = 25 °C, unless otherwise specified PR - Reverse Power Dissipation (mW) 14 1000 VR = 60 V I F - Forward Current (mA) 12 RthJA = 540 K/W 10 8 6 Limit at PPRR - Limit at100 100%%VRVR 4 PR - Limit at 80 % VR 100 Tj = 125 °C 10 Tj = 25 °C 1 0.1 2 0.01 0 25 50 75 100 125 Tj - Junction Temperature (°C) 15794 0 150 1.5 2.0 Figure 3. Forward Current vs. Forward Voltage 1000 2.0 CD - Diode Capacitance (pF) V R = V RRM I R - Reverse Current (µA) 1 V F - Forward Voltage (V) 15796 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 0.5 100 10 1 f = 1 MHz 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 25 15795 0 50 75 100 125 Tj - Junction Temperature (°C) Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 0.1 150 15797 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85503 [email protected], [email protected], [email protected] Rev. 2.0, 23-Jul-10 BAS381, BAS382, BAS383 Vishay Semiconductors 0.71 1.3 1.27 9.9 0.152 10 25 0.355 2.5 24 95 10329 Figure 5. Board for RthJA definition (in mm) Package Dimensions in millimeters (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. surface plan gl 1 (0.039) 35 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 0.8 (0.031) Reflow soldering 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 Document Number 85503 Rev. 2.0, 23-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000