VISHAY SFH620A-1

SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-emitter Voltage, VCEO = 70 V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 "(2.54 mm) Spacing
• High Common-Mode Interference Immunity
Agency Approvals
•
•
•
•
UL - File No. E52744 System Code J
CSA 93751
BSI IEC60950 IEC60965
DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The SFH620A (DIP) and SFH6206 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Document Number 83675
Rev. 1.4, 26-Apr-04
1
A/C 1
4 C
C/A 2
3 E
1
i179080
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 VRMS or DC.
Order Information
Part
Remarks
SFH620A-1
CTR 40 - 125 %, DIP-4
SFH620A-2
CTR 63 - 200 %, DIP-4
SFH620A-3
CTR 100 - 320 %, DIP-4
SFH6206-1
CTR 40 - 125 %, SMD-4
SFH6206-2
CTR 63 - 200 %, SMD-4
SFH6206-3
CTR 100 - 320 %, SMD-4
SFH620A-1-X006
CTR 40 - 125 %, DIP-4 mil (option 6)
SFH620A-2-X006
CTR 63 - 200 %, DIP-4 mil (option 6)
SFH620A-2-X007
CTR 63 - 200 %, SMD-4 (option 7)
SFH620A-3-X006
CTR 100 - 320 %, DIP-4 mil (option 6)
For additional information on the available options refer to
Option Information.
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1
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC Forward current
IF
± 60
mA
IFSM
± 2.5
A
Pdiss
100
mW
Surge forward current
Test condition
tp ≤ 10 µs
Power dissipation
Unit
Output
Symbol
Value
Unit
Collector-emitter voltage
Parameter
Test condition
VCE
70
V
Emitter-collector voltage
VEC
7.0
V
Collector current
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Insulation thickness between
emitter and detector
≥ 4.0
mm
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
tp ≤ 1.0 ms
Power dissipation
Coupler
Parameter
Test condition
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov.74
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
VIO = 500 V, Tamb = 100 °C
Junction temperature
Soldering temperature
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2
max. 10 s. dip soldering
distance to seating plane
≥ 1.5 mm
Document Number 83675
Rev. 1.4, 26-Apr-04
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = ± 60 mA
Test condition
VF
1.25
1.65
Capacitance
VR = 0 V, f = 1.0 MHz
CO
50
pF
Rthja
750
°C/W
Thermal resistance
Symbol
Min
Unit
V
Output
Parameter
Collector-emitter capacitance
Test condition
VCE = 5.0 V, f = 1.0 MHz
Thermal resistance
Symbol
Min
Typ.
Max
Unit
CCE
6.8
pF
Rthja
500
°C/W
Coupler
Parameter
Collector-emitter saturation
voltage
Test condition
Part
Typ.
Max
Unit
VCEsat
0.25
0.4
V
CC
0.2
SFH620A-1
SFH6206-1
ICEO
2.0
50
nA
SFH620A-2
SFH6206-2
ICEO
2.0
50
nA
SFH620A-3
SFH6206-3
ICEO
5.0
100
nA
Typ.
IF = 10 mA, IC = 2.5 mA
Coupling capacitance
Collector-emitter leakage
current
VCE = 10 V
Symbol
Min
pF
Note: Still air, coupler soldered to PCB or base
Current Transfer Ratio
Parameter
IC/IF
Test condition
VCE = 5.0 V, IF = ± 10 mA
VCE = 5.0 V, IF = ± 1.0 mA
Document Number 83675
Rev. 1.4, 26-Apr-04
Part
Symbol
Min
Max
Unit
SFH620A-1
SFH6206-1
CTR
40
125
%
SFH620A-2
SFH6206-2
CTR
63
200
%
SFH620A-3
SFH6206-3
CTR
100
320
%
SFH620A-1
SFH6206-1
CTR
13
30
%
SFH620A-2
SFH6206-2
CTR
22
45
%
SFH620A-3
SFH6206-3
CTR
34
70
%
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3
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
IF
RL = 75 Ω
VCC = 5 V
IC
47 Ω
isfh620a_08
Fig. 1 Switching Times Linear Operation (without saturation)
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on Time
RL = 75 Ω, IF = 10 mA, VCC = 5.0 V
ton
3.0
µs
Rise Time
RL = 75 Ω, IF = 10 mA, VCC = 5.0 V
tr
2.0
µs
Turn-off Time
RL = 75 Ω, IF = 10 mA, VCC = 5.0 V
toff
2.3
µs
Fall Time
RL = 75 Ω, IF = 10 mA, VCC = 5.0 V
tf
2.0
µs
Cut-off frequency
RL = 75 Ω, IF = 10 mA, VCC = 5.0 V
fctr
250
kHz
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF = 10 mA, VCE = 5.0 V
isfh620a_01
isfh620a_02
Fig. 2 Current Transfer Ratio (CTR) vs. Temperature
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4
Fig. 3 Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Document Number 83675
Rev. 1.4, 26-Apr-04
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
isfh620a_06
isfh620a_03
Fig. 4 Diode Forward Voltage (typ.) vs. Forward Current
Fig. 7 Permissible Power Dissipation vs. Ambient Temperature
f = 1.0 MHz
isfh620a_07
isfh620a_04
Fig. 5 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
Fig. 8 Permissible Diode Forward Current vs. Ambient
Temperature
Pulse cycle
D = parameter,
isfh620a_05
Fig. 6 Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
Document Number 83675
Rev. 1.4, 26-Apr-04
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5
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.300 (7.62) typ.
.130 (3.30)
.150 (3.81)
10°
4°
typ.
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
.018 (.46)
.022 (.56)
i178027
.230 (5.84)
.250 (6.35)
3°–9°
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
Package Dimensions in Inches (mm)
SMD
pin one ID
.030 (.76)
.100 (2.54)
R .010 (.25)
.070 (1.78)
.255 (6.48)
.268 (6.81)
.315 (8.00) min
.435 (11.05)
3
4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.060 (1.52)
.296 (7.52)
.312 (7.90)
10°
.031 (.79)
typ.
.010 (.25)
typ.
.130 (3.30)
.150 (3.81)
ISO Method A
i178029
4° typ.
1.00 (2.54)typ.
.050 (1.27)
typ.
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6
.0098 (.249)
.035 (.102)
Lead
coplanarity
.004 max.
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
3°–7°
Document Number 83675
Rev. 1.4, 26-Apr-04
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
18487
Document Number 83675
Rev. 1.4, 26-Apr-04
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
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7
SFH620A / SFH6206
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83675
Rev. 1.4, 26-Apr-04