VISHAY SFH612A

SFH612A/ SFH655A
Vishay Semiconductors
Optocoupler, Photodarlington Output
Features
•
•
•
•
High Isolation Test Voltage 5300 VRMS
Standard Plastic DIP-4 Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
A 1
4 C
C 2
3
E
i179057
• UL - File No. E52744 System Code H or J
• BSI IEC60950 IEC60065
Description
e3
Pb
Pb-free
Order Information
The SFH612A and SFH655A are optically coupled
isolators with a Gallium Arsenide infrared LED and a
silicon photodarlington detector. Switching can be
achieved while maintaining a high degree of isolation
between driving and load circuits. These optocouplers can be used to replace reed and mercury relays
with advantages of long life, high speed switching and
elimination of magnetic fields.
Part
Remarks
SFH612A
CTR > 200 %, DIP-4
SFH655A
CTR > 600 %, DIP-4
SFH655A-X009
CTR > 600 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Peak reverse voltage
Forward continuous current
Surge forward current
tp ≥ 10 µs
Symbol
Value
Unit
VRM
6.0
V
IF
60
mA
IFSM
2.5
A
1.33
mW/°C
100
mW
Derate linearly from 25 °C
Power dissipation
Document Number 83667
Rev. 1.4, 26-Oct-04
Pdiss
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SFH612A/ SFH655A
Vishay Semiconductors
Output
Symbol
Value
Unit
Collector-emitter breakdown
voltage
Parameter
Test condition
BVCEO
55
V
Emitter-collector breakdown
voltage
BVECO
6.0
V
125
mA
2.00
mW/°C
Pdiss
150
mW
Symbol
Value
Unit
3.33
mW/°C
Collector (load) current
IC
Derate linearly from 25 °C
Power dissipation
Coupler
Parameter
Test condition
Derate linearly from 25 °C
Total power dissipation
Ptot
250
mW
t = 1.0 s
Isolation test voltage between
input and output, climate acc. to
IEC 60068-1:1988
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index acc.
to DIN IEC 112/VDE 0303, part
1:06-84
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥
Storage temperature range
Operating temperature range
Soldering temperature
Ω
Ω
1011
Tstg
- 55 to + 150
Tamb
- 55 to + 100
°C
260
°C
max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 10 mA
Test condition
Symbol
VF
Min
1.15
1.5
Unit
V
Reverse current
VR = 6.0 V
IR
0.02
10
µA
Capacitance
VR = 0, f = 1.0 MHz
CO
14
pF
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
ICE = 100 µA
BVCEO
55
V
Emitter-collector breakdown
voltage
IEC = 10 µA
BVECO
6.0
V
Collector-emitter dark current
VCE = 40 V
ICEO
12
Collector-emitter capacitance
VCE = 0 V, f=1.0 MHz
CCE
13.5
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2
Test condition
Typ.
Max
400
Unit
nA
pF
Document Number 83667
Rev. 1.4, 26-Oct-04
SFH612A/ SFH655A
Vishay Semiconductors
Coupler
Part
Symbol
Collector-emitter saturation
voltage
Parameter
IF = 1.0 mA, IC = 2.0 mA
Test condition
SFH612A
VCEsat
IF = 20 mA, IC = 5.0 mA
SFH655A
VCEsat
Coupling capacitance
VI-O = 0 V, f = 1.0 MHz
Min
Typ.
Max
Unit
1.0
V
1.0
CC
V
0.45
pF
Current Transfer Ratio
Parameter
Test condition
IF = 1.0 mA, VCE = 2.0 V
Current Transfer Ratio
Part
Symbol
Min
SFH612A
CTR
200
Typ.
Max
Unit
%
SFH655A
CTR
600
%
Min
Switching Characteristics
Part
Symbol
Turn-on time
(Fig. 10, Test Circuit 1)
Parameter
VCC = 10 V, IC = 2.0 mA,
RL = 100 Ω
Test condition
SFH612A
ton
Typ.
16
Max
Unit
µs
Turn-off time
(Fig. 10, Test Circuit 1)
VCC = 10 V, IC = 2.0 mA,
RL = 100 Ω
SFH612A
toff
15
µs
Rise time
(Fig. 10, Test Circuit 1)
VCC = 10 V, IC = 2.0 mA,
RL = 100 Ω
SFH612A
tr
14
µs
Fall time
(Fig. 10, Test Circuit 1)
VCC = 10 V, IC = 2.0 mA,
RL = 100 Ω
SFH612A
tf
14
µs
Turn-on time
(Fig. 11, Test Circuit 2)
VCC = 2.0 V, IC = 10 mA,
RL = 100 Ω
SFH655A
ton
31
µs
Turn-off time
(Fig. 11, Test Circuit 2)
VCC = 2.0 V, IC = 10 mA,
RL = 100 Ω
SFH655A
toff
55
µs
Rise time
(Fig. 11, Test Circuit 2)
VCC = 2.0 V, IC = 10 mA,
RL = 100 Ω
SFH655A
tr
27
250
µs
Fall time
(Fig. 11, Test Circuit 2)
VCC = 2.0 V, IC = 10 mA,
RL = 100 Ω
SFH655A
tf
56
200
µs
1.5
1.00
1.4
0.95
IF = 20 mA, IC = 5.0 mA
0.90
1.3
–40°C
1.2
0.85
0°C
VCEsat (V)
Forward Voltage (V)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.1
1.0
0.9
25°C
0.80
0.75
0.70
0.65
0.60
75°C
0.8
0.55
0.7
0.01
0.10
1.00
10.00
100.00
Forward Current, IF (mA)
isfh612a_01
Figure 1. Forward Voltage vs. Forward Current
Document Number 83667
Rev. 1.4, 26-Oct-04
0.50
–40
–20
0
20
40
60
80
100
Temperature, TA (°C)
isfh612a_02
Figure 2. Collector Emitter Saturation Voltage vs. Temperature
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SFH612A/ SFH655A
Vishay Semiconductors
1.2
120
IF=10 mA
100
1.0
80
I C (mA)
Normalized CTR
IF = 1.0 mA, VCE = 2.0 V
60
0.8
IF=5 mA
40
IF=1 mA
20
0.6
IF=0.5 mA
0
–40
–20
20
0
40
60
80
100
0.5
0.6
0.7
Temperature, TA (°C)
1.0
1.1
1.2
isfh612a_06
Figure 3. Normalized CTR vs. Temperature
Figure 6. Collector Current vs. Collector-Emitter Saturation
Voltage
1.80
104
1.60
IF = 1.0 mA, VCE = 2.0 V,
100 °C
103
1.40
1.20
ICEO (nA)
Normalized CTR
0.9
VCEsat (V)
isfh612a_03
1.00
0.80
75 °C
102
50 °C
10
0.60
0.40
25 °C
0 °C
–25 °C
–25 °C
1.0
0.20
0.00
0.01
0.1
1.0
10
0.1
100
0
10
20
Forward Current, IF (mA)
isfh612a_04
30
40
50
60
V (V)
CE
isfh612a_07
Figure 4. Normalized CTR vs. Forward Current
Figure 7. Collector-Emitter Dark Current vs. Collector-Emitter
Voltage over Temperature
10 3
1000.0
IF=10 mA
IF=5 mA
IC = 2.0 mA, VCC = 10 V (SFH612A)
IF=1.5 mA
IF=2 mA
Time Switching, µs
100.0
IC (mA)
0.8
10.0
IF=1 mA
IF=0.5 mA
1.0
10 2 T
on
Toff
Trise
Tfall
0.1
0
1
2
3
4
5
6
7
8
9
10
102
10
VCE (V)
isfh612a_05
Figure 5. Collector Current vs. Collector Emitter Voltage
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103
Load Resistance, RL (ohm)
104
isfh612a_08
Figure 8. Switching Time vs. Load Resistor
Document Number 83667
Rev. 1.4, 26-Oct-04
SFH612A/ SFH655A
Vishay Semiconductors
10
Time Switching, µs
IC = 10 mA, VCE = 2.0 V (SFH655A)
10 2
tfall
toff
ton
100
10 2
trise
10 3
Load Resistance, RL (Ω)
10 4
isfh612a_09
Figure 9. Switching Time vs. Load Resistor
VCC
IF
IF
90%
VO
VOUT
10%
tR
RE
t ON
tF
tOFF
Waveform 1
Circuit 1
isfh612a_10
Figure 10. Switching Time Test Circuit and Waveforms
VCC
Input
Pulse
RL
IF
VCE 10%
Output
Pulse
90%
tR
tON
Circuit 2
tF
tOFF
Waveform 2
isfh612a_11
Figure 11. Switching Time Test Circuit and Waveforms
Document Number 83667
Rev. 1.4, 26-Oct-04
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SFH612A/ SFH655A
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
i178027
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
3°–9°
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
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15° max.
18449
Document Number 83667
Rev. 1.4, 26-Oct-04
SFH612A/ SFH655A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83667
Rev. 1.4, 26-Oct-04
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