RGF1A thru RGF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Reverse Voltage DO-214BA (GF1) ® 50 to 1000V Forward Current 1.0A * d e t n e t a P Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.066 MIN. (1.68 MIN.) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.094 MAX. (2.38 MAX.) Dimensions in inches and (millimeters) Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) 0.006 (0.152) TYP. Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideal for surface mount automotive applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • Built-in strain relief • Easy pick and place • Fast switching for high efficiency • High temperature soldering guaranteed: 450°C/5 seconds at terminals. • Complete device submersible temperature of 265°C for 10 seconds in solder bath 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) Mechanical Data Case: JEDEC DO-214BA, molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 oz, 0.12 g Packaging codes/options: 19/6.5K per 13” Reel (12mm Tape) 17/1.5K per 7” Reel (12mm Tape) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Parameter Device marking code RA RB RD RG RJ RK RM Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL = 120°C IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Max. full load reverse current, full cycle average TA = 55°C IR(AV) 50 µA RΘJA RΘJL 80 28 °C/W TJ,TSTG –65 to +175 °C (1) Typical thermal resistance Operating junction and storage temperature range Electrical Characteristics (T J = 25°C unless otherwise noted) Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Parameter Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage V TA = 25°C TA = 125°C Unit VF 1.30 V IR 5.0 100 µA Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25 A trr Typical junction capacitance at 4.0V, 1MHz CJ 150 250 500 8.5 ns pF Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88697 08-Feb-02 www.vishay.com 1 RGF1A thru RGF1M Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 1 0.5 60 HZ Resistive or Inductive Load 0 100 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 30 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 130 140 150 160 20 15 10 5 100 10 1 175 Lead Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 10 Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) 25 0 120 110 10 1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1 0.01 0.4 TJ = 125°C 1 TJ = 100°C 0.1 TJ = 25°C 0.01 0.6 0.8 1.0 1.4 1.2 1.6 20 0 40 80 60 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 100 100 100 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 10 1 1 10 Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (°CW) Junction Capacitance (pF) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Mounted on 0.2 x 0.2" (5. x 7mm) Copper Pad Areas 10 1 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88697 08-Feb-02