BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier DO-204AL (DO-41) Reverse Voltage 400 to 1000 V Forward Current 1.0 A Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • For use in high frequency rectifier circuits • Fast switching for high efficiency • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 1.0 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension * d e t n e t a P 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ® 1.0 (25.4) MIN. Mechanical Data 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gram for suffix "E" part numbers Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols BA157GP BA158GP BA159DGP BA159GP Units Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V Maximum RMS voltage VRMS 280 420 560 700 V Maximum DC blocking voltage VDC 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C IF(AV) 1.0 A Peak forward surge current 10ms single half sine-wave superimposed on rated load at TA=25°C IFSM 20 A RΘJA 55 °C/W TJ, TSTG – 65 to +175 °C Typical thermal resistance (NOTE 1) Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols BA157GP BA158GP BA159DGP BA159GP Units Maximum instantaneous forward voltage at 1.0A VF 1.3 V Maximum DC reverse current at rated DC blocking voltage TA=25°C IR 5.0 µA Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr Typical junction capacitance at 4.0V, 1MHz CJ 150 250 500 15 500 ns pF Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted Document Number 88537 06-Mar-02 www.vishay.com 1 BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 20 1.0 Resistive or Inductive Load 0.8 0.6 0.4 0.2 0.375" (9.5mm) Lead Length Peak Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 – Forward Current Derating Curve 75 50 25 100 150 125 5 1 100 Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 20 Instantaneous Reverse Current (µA) 1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1 0.01 10 Ambient Temperature (°C) 10 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 100 100 100 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 10 1 10 Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (°CW) Instantaneous Forward Current (A) 10 175 10 Junction Capacitance (pF) 15 0 0 1 TA = 25°C 10ms Single Half Sine-Wave At Rated Load 10 1 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88537 06-Mar-02 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.