DG411/412/413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. • • • • • • • To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup. 44 V Supply Max Rating ± 15 V Analog Signal Range On-Resistance - rDS(on): 25 Ω Fast Switching - tON: 110 ns Ultra Low Power - PD: 0.35 µW TTL, CMOS Compatible Single Supply Capability Pb-free Available RoHS* COMPLIANT BENEFITS • • • • Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing APPLICATIONS The DG411 and DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches. • • • • • Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411 Dual-In-Line and SOIC DG411 LCC D1 IN1 NC IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Key 3 2 1 4 18 S2 V- 5 17 V+ NC 6 16 NC 7 15 VL 8 14 S3 GND S4 9 10 11 12 TRUTH TABLE Logic 0 1 Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V DG411 ON OFF DG412 OFF ON Logic SW1, SW4 SW2, SW3 0 OFF ON 1 ON OFF 13 D4 IN4 NC IN3 D3 Top View DG413 Dual-In-Line and SOIC DG413 LCC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 13 4 19 S1 Top View V- 20 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View D1 Key 3 IN1 NC IN2 2 1 20 D2 19 S1 4 18 S2 V- 5 17 V+ NC 6 16 GND 7 15 VL S4 8 14 S3 9 D4 10 11 12 IN4 NC IN3 Top View NC TRUTH TABLE Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V 13 D3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70050 S-71241–Rev. E, 25-Jun-07 www.vishay.com 1 DG411/412/413 Vishay Siliconix ORDERING INFORMATION Temp Range DG411/DG412 Package - 40 to 85 °C 16-Pin Plastic DIP Part Number DG411DJ DG411DJ-E3 DG412DJ DG412DJ-E3 DG411DY DG411DY-E3 DG411DY-T1 DG411DY-T1-E3 - 40 to 85 °C 16-Pin Narrow SOIC DG412DY DG412DY-E3 DG412DY-T1 DG412DY-T1-E3 DG413 16-Pin Plastic DIP DG413DJ DG413DJ-E3 16-Pin Narrow SOIC DG413DY DG413DY-E3 DG413DY-T1 DG413DY-T1-E3 - 40 to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter V+ to V- Limit 44 GND to VVL 25 (GND - 0.3) to (V+) + 0.3 (V-) -2 to (V+) + 2 or 30 mA, whichever occurs first 30 Digital Inputsa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Package)b Unit 100 (AK, AZ Suffix) - 65 to 150 (DJ, DY Suffix) - 65 to 125 16-Pin Plastic DIPc 470 16-Pin Narrow SOICd 600 16-Pin CerDIPe 900 LCC-20e 900 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70050 S-71241–Rev. E, 25-Jun-07 DG411/412/413 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) IS(off) Switch Off Leakage Current ID(off) A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind - 15 15 - 15 VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 8.5 V Room Full 25 Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 Typc Full V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V 35 45 Maxd Unit 15 V 35 45 Ω ID(on) V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Room Full ± 0.1 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 Digital Control Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Turn-On Time tON RL = 300 Ω, CL = 35 pF 110 Turn-Off Time tOFF Room Full Room Full Channel On Leakage Current nA µA Dynamic Characteristics VS = ± 10 V, See Figure 2 Break-Before-Make Time Delay tD DG413 Only, VS = 10 V RL = 300 Ω, CL = 35 pF Charge Injection Q Vg = 0 V, Rg = 0 Ω CL = 10 nF Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee Power Supplies OIRR XTALK CS(off) CD(off) I+ Negative Supply Current I- Logic Supply Current IL Document Number: 70050 S-71241–Rev. E, 25-Jun-07 f = 1 MHz CD(on) Positive Supply Current Ground Current RL = 50 Ω, CL = 5 pF, f = 1 MHz IGND V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V 175 240 145 160 100 Room 25 Room 5 Room 68 Room 85 Room 9 Room 9 Room 35 Room Full Room Full Room Full Room Full 0.0001 - 0.0001 ns pC dB pF 1 5 -1 -5 0.0001 - 0.0001 175 220 145 160 1 5 -1 -5 1 5 -1 -5 1 5 µA -1 -5 www.vishay.com 3 DG411/412/413 Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIESa Test Conditions Unless Specified V+ = 12 V, V- = 0 V A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Mind VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb rDS(on) V+ = 10.8 V, IS = - 10 mA, VD = 3 V, 8 V Room Full 40 Turn-On Time tON RL = 300 Ω, CL = 35 pF 175 Turn-Off Time tOFF Room Hot Room Hot 250 400 125 140 250 315 125 140 Room 25 Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance Typc Maxd Full Maxd Unit 12 12 V 80 100 80 100 Ω Dynamic Characteristics VS = 8 V, See Figure 2 95 Break-Before-Make Time Delay tD DG413 Only, VS = 8 V RL = 300 Ω, CL = 35 pF Charge Injection Q Vg = 6 V, Rg = 0 Ω, CL = 10 nF Room 25 0.0001 V+ = 13.5 V, VIN = 0 or 5 V Room Hot Room Hot Room Hot Room Hot ns pC Power Supplies Positive Supply Current I+ Negative Supply Current IIL Logic Supply Current IGND Ground Current - 0.0001 1 5 -1 -5 -1 -5 0.0001 - 0.0001 1 5 1 5 µA 1 5 -1 -5 -5 Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 300 50 TA = 25 °C VL = 5 V 250 40 35 ± 10 V 25 V+ = 3 V VL = 3 V 200 ±8V 30 V DS(on) (Ω) r DS(on) Drain-Source On-Resistance (Ω) 45 ±5V ± 12 V ± 15 V 20 150 V+ = 5 V 100 15 ± 20 V 8V 10 12 V 50 15 V 5 20 V 0 0 - 20 - 15 - 10 -5 0 5 10 15 20 VD – Drain Voltage (V) On-Resistance vs. VD and Power Supply Voltage www.vishay.com 4 0 2 4 6 8 10 12 14 16 18 20 VD – Drain Voltage (V) On-Resistance vs. VD and Unipolar Supply Voltage Document Number: 70050 S-71241–Rev. E, 25-Jun-07 DG411/412/413 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 V+ = 15 V V- = - 15 V VL = 5 V TA = 25 °C 20 I S, I D (pA) 10 r DS(on) – Drain-Source On-Resistance (Ω) 35 ID(off) 0 IS(off) - 10 ID(on) - 20 - 30 - 40 - 50 V+ = 15 V V- = - 15 V VL = 5 V 30 125 °C 25 85 °C 20 25 °C 15 - 55 °C 10 5 - 60 - 15 - 10 -5 0 5 10 - 15 15 - 10 5 10 15 140 100 V+ = 15 V V- = - 15 V VL = 5 V 80 V+ = 15 V V- = - 15 V VL = 5 V 120 100 60 CL = 10 nF 80 40 60 Q (pC) Q (pC) 0 ID, IS Leakages vs. Temperature Leakage Current vs. Analog Voltage CL = 10 nF 20 CL = 1 nF 40 20 0 0 CL = 1 nF - 20 - 20 - 40 - 40 - 60 - 60 - 15 - 10 -5 0 5 10 - 15 15 - 10 -5 0 5 10 VS – Source Voltage (V) VD – Drain Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 15 240 3.5 210 3.0 VL = 7.5 V 2.0 6.5 V 1.5 1.0 5.5 V 4.5 V t ON, t OFF (ns) 180 2.5 V TH (V) -5 VD – Drain Voltage (V) VD or VS – Drain or Source Voltage (V) V+ = 15 V V- = - 15 V VL = 5 V VS = 10 V 150 tON 120 tOFF 90 60 30 0.5 0 0 (V+) 5 10 15 20 25 30 35 40 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Input Switching Threshold vs. Supply Voltage Document Number: 70050 S-71241–Rev. E, 25-Jun-07 Switching Time vs. Temperature www.vishay.com 5 DG411/412/413 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 mA V+ = 15 V V- = - 15 V VL = 5 V 10 mA = 1 SW = 4 SW 1 mA I SUPPLY I+, I100 µA 10 µA IL 1 µA 100 nA 10 nA 10 100 1k 10 k 100 k 1M 10 M f – Frequency (Hz) Supply Current vs. Input Switching Frequency SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V Logic Input tr < 20 ns tf < 20 ns 3V 50 % 0V VL ± 10 V V+ S tON D Switch Input* VO VS VO IN GND RL 300 Ω V- CL 35 pF Switch Output Switch Input* - 15 V VO = V S 0V tON 90 % VO -V S *VS = 10 V for t ON, V S = - 10 V for tOFF CL (includes fixture and stray capacitance) RL 90 % Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time www.vishay.com 6 Document Number: 70050 S-71241–Rev. E, 25-Jun-07 DG411/412/413 Vishay Siliconix TEST CIRCUITS +5V + 15 V 3V Logic Input VL VS1 S1 D1 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 0V VS1 VO1 VO1 IN1 VS2 50 % V+ RL2 300 Ω 0V VS2 VO2 CL1 35 pF CL2 35 pF 0V Switch Output 90 % tD tD - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413) ΔVO Rg +5V + 15 V VL V+ S VO INX OFF D IN Vg ON OFF VO CL 10 nF 3V V- GND INX OFF ON Q = ΔV O x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. - 15 V Figure 4. Charge Injection C +5V + 15 V VL V+ D1 S1 VS Rg = 50 Ω C 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTA LK Isolation = 20 log V- C VS VO - 15 V C = RF bypass Figure 5. Crosstalk Document Number: 70050 S-71241–Rev. E, 25-Jun-07 www.vishay.com 7 DG411/412/413 Vishay Siliconix +5V + 15 V C VL + 15 V C V+ C VO D S VS +5V C VL V+ S Rg = 50 Ω RL 50 Ω IN 0 V, 2.4 V Meter IN GND V- C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND - 15 V Off Isolation = 20 log V- C VS VO - 15 V C = RF Bypass Figure 7. Source/Drain Capacitances Figure 6. Off Isolation APPLICATIONS Single Supply Operation: Summing Amplifier The DG411/412/413 can be operated with unipolar supplies from 5 V to 44 V. These devices are characterized and tested for unipolar supply operation at 12 V to facilitate the majority of applications. In single supply operation, V+ is tied to VL and V- is tied to 0 V. See Input Switching Threshold vs. Supply Voltage curve for VL versus input threshold requirments. When driving a high impedance, high capacitance load such as shown in Figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output. R1 R2 VIN 1 C1 R5 R3 R4 VIN 2 – VOUT + C2 R6 DG413 Figure 8. Summing Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70050. www.vishay.com 8 Document Number: 70050 S-71241–Rev. E, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1