DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. • • • • • • • • These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG308B and DG309B can handle up to ± 22 V input signals. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG308B is a normally open switch and the DG309B is a normally closed switch. (See Truth Table.) ± 22 V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance - rDS(on): 45 Ω Low Leakage - ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching - tON: < 200 ns Low Glitching - Q: 1 pC Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • • • Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG308A/309 Space Savings (TSSOP) APPLICATIONS • • • • • • • Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG308B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 VGND S4 D4 IN4 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 IN2 D2 TRUTH TABLE Logic 0 1 S2 V+ NC DG308B OFF ON DG309B ON OFF Logic "0" ≤ 3.5 V Logic "1" ≥ 11 V S3 D3 IN3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70047 S-71241–Rev. F, 25-Jun-07 www.vishay.com 1 DG308B/309B Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG308BDJ DG308BDJ-E3 16-Pin PlasticDIP DG309BDJ DG309BDJ-E3 DG308BDY DG308BDY-E3 DG308BDY-T1 DG308BDY-T1-E3 16-Pin Narrow SOIC DG309BDY DG309BDY-E3 DG309BDY-T1 DG309BDY-T1-E3 - 40 to 85 °C DG308BDQ DG308BDQ-E3 DG308BDQ-T1 DG308BDQ-T1-E3 16-Pin TSSOP DG309BDQ DG309BDQ-E3 DG309BDQ-T1 DG309BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Voltages Referenced, V+ to VGND 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Current, Any Terminal 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 100 Storage Temperature Power Dissipation (Package)b Unit 44 (AK Suffix) - 65 to 150 (DJ, DY and DQ Suffix) - 65 to 125 16-Pin Plastic DIPc 470 16-Pin Narrow SOIC and TSSOPd 640 e 16-Pin CerDIP V mA °C mW 900 Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70047 S-71241–Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) ΔrDS(on) A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind - 15 15 - 15 VIN = 11 V, 3.5 Vf Tempb 45 VD = ± 10 V, IS = 1 mA Room Full Room ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Typc Full 85 100 Maxd Unit 15 V 85 100 Ω 2 % Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V Room Full Drain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V Room Full ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Drain On Leakage Current ID(on) VS = VD = ± 14 V Room Full ± 0.02 - 0.5 - 40 0.5 40 - 0.5 - 10 0.5 10 nA Digital Control Input, Voltage High VINH Full Input, Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL CIN 11 3.5 Full Room 11 -1 1 3.5 -1 1 5 V µA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Source-Off Capacitance Charge Injection Q CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off-Isolation Channel-to-Channel Crosstalk Power Supply OIRR Positive Supply Current XTALK VS = 3 V, See Figure 2 CL = 1000 pF, Vg = 0 V, Rg = 0 Ω VS = 0 V, f = 1 MHz, Power Supply Range for Continuous Operation VOP Document Number: 70047 S-71241–Rev. F, 25-Jun-07 200 150 Room 1 Room 5 Room 5 Room 16 CL = 15 pF, RL = 50 Ω, VS = 1 VRMS, f = 100 kHz Room 90 Room 95 VIN = 0 V or 15 V I- 200 150 VD = VS = 0 V, f = 1 MHz I+ Negative Supply Current Room Room ns pC pF dB Room Full Room Full 1 5 -1 -5 Full ±4 1 5 -1 -5 ± 22 ±4 ± 22 µA V www.vishay.com 3 DG308B/309B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLYa Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 11 V, 3.5 Vf Tempb VANALOG Full rDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q VS = 8 V, See Figure 2 Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind 12 0 0 90 160 200 Maxd Unit 12 V 160 200 Ω Room 300 300 Room 200 200 CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω Room VIN = 0 V or 12 V Room Full Room Full -1 -5 Full 4 4 ns pC Power Supply Positive Supply Current I+ Negative Supply Current I- Power Supply Range for Continuous Operation VOP 1 5 1 5 -1 -5 44 4 44 µA V Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70047 S-71241–Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 r DS(on) – Drain-Source On-Resistance (Ω) r DS(on) – Drain-Source On-Resistance (Ω) 110 100 90 ±5V 80 70 ± 10 V 60 50 ± 15 V 40 ± 20 V 30 20 -8 -4 0 4 8 12 16 80 70 60 125 °C 50 85 °C 40 25 °C 30 - 55 °C 20 10 0 - 15 10 - 20 - 16 - 12 V+ = 15 V V- = - 15 V 90 20 - 10 -5 10 15 40 250 V+ = 5 V 225 V+ = 22 V V- = - 22 V TA = 25 °C 30 200 20 175 150 I S,I D – Current (pA) r DS(on) – Drain-Source On-Resistance (Ω) 5 rDS(on) vs. VD and Temperature rDS(on) vs. VD and Power Supply Voltages 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 - 10 - 20 50 - 30 25 0 0 2 4 6 8 10 12 14 - 40 - 20 16 - 15 - 10 -5 VD – Drain Voltage (V) 0 5 10 15 20 Analog Voltage Leakage Currents vs. Analog Voltage rDS(on) vs. VD and Single Power Supply Voltages 30 1 nA V+ = 15 V V- = - 15 V VS, V D = ± 14 V 20 Q – Charge (pC) I S, I D – Current 0 VD – Drain Voltage (V) VD – Drain Voltage (V) 100 pA IS(off), ID(off) 10 pA 10 V+ = 15 V V- = - 15 V 0 V+ = 12 V V- = 0 V - 10 - 20 1 pA - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Leakage Currents vs. Temperature Document Number: 70047 S-71241–Rev. F, 25-Jun-07 - 30 - 15 - 10 -5 0 5 10 15 Analog Voltage (V) QS, QD – Charge Injection vs. Analog Voltage www.vishay.com 5 DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 V+ = 15 V V- = - 15 V 110 OIRR (dB) 100 90 RL = 50 Ω 80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) Off Isolation vs. Frequency SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX V- Level Shift/ Drive V+ INX DX GND V– Figure 1. www.vishay.com 6 Document Number: 70047 S-71241–Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix TEST CIRCUITS + 15 V V+ D S VS = + 3 V VO Logic Input tr < 20 ns tf < 20 ns 12 V 50 % 0V tOFF IN V- GND CL 35 pF RL 1 kΩ 12 V 90 % Switch Output VO tON - 15 V RL VO = VS RL + rDS(on) Figure 2. Switching Time C + 15 V + 15 V C V+ S1 VS V+ S VS VO D D1 Rg= 50 Ω 50 Ω IN1 Rg = 50 Ω 0 V, 15 V 50 Ω IN S2 NC 0 V, 15 V GND V- C 50 Ω IN2 0 V, 15 V GND - 15 V C = RF bypass XTA LK Isolation = 20 log VS Off Isolation = 20 log VO Figure 3. Off Isolation - 15 V ΔVO VO V+ S D VO CL 1000 pF 12 V GND C Figure 4. Channel-to-Channel Crosstalk IN Vg V- VS VO + 15 V Rg VO D2 INX ON OFF ON VΔV O = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x ΔVO - 15 V Figure 5. Charge Injection Document Number: 70047 S-71241–Rev. F, 25-Jun-07 www.vishay.com 7 DG308B/309B Vishay Siliconix APPLICATIONS 30 pF +5V VIN1 + 15 V VL + 15 V V+ + LM101A VIN2 + 15 V - DG419 - 15 V RF1 18 kΩ RF1 9.9 kΩ RF1 100 kΩ RG1 2 kΩ RG2 100 Ω RG3 100 Ω DG308B CH V- GND - 15 V Gain = Gain 1 (x 1) RF + RG Gain 2 (x 10) RG Gain 3 (x 100) Gain 4 (x 1000) V- GND Logic High = Switch On - 15 V Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains 15 V V+ Logic Input Low = Sample High = Hold 1 kΩ + 15 V + 15 V - 15 V - J202 LM101A VIN + 5 MΩ 50 pF 5.1 MΩ DG309B V30 pF Aquisition Time Aperature Time Sample to Hold Offset Droop Rate - 15 V 200 Ω 2N4400 VOUT 1000 pF J500 J507 - 15 V = 25 µs = 1 µs = 5 mV = 5 mV/s Figure 7. Sample-and-Hold www.vishay.com 8 Document Number: 70047 S-71241–Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix APPLICATIONS + 15 V 160 V1 C4 fC3 Select TTL Control 150 pF 120 C3 1500 pF Voltage Gain dB fC4 Select C2 fC2 Select 0.015 μF fC1 Select 0.15 µF C1 80 fC1 fC2 fC3 fL1 0 V- DG309B fC4 40 fL2 fL3 fL4 GND - 40 1 - 15 V 10 100 1k R3 = 1 MΩ + 15 V - 15 V R1 = 10 kΩ LM101A + R2 = 10 kΩ VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2πR3CX 100 k 1M Max Attenuation = rDS(on) 10 kΩ R3 R1 = 100 (40 dB) 1 2πR1CX fL (Unity Gain Frequency) = 30 pF 10 k Frequency – Hz ≈ - 40 dB Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70047. Document Number: 70047 S-71241–Rev. F, 25-Jun-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1