*R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP1070H3BJ THRU TISP1120H3BJ DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxH3BJ Overvoltage Protector Series Overvoltage Protection for Negative Rail SLICs SMB03 Package (Top View) Dual High Current Protectors in a Space Efficient Package - 2 x 100 A 10/1000 Current Rating - SMB03 Package (3-pin Modified SMB/DO-214AA) 50 % Space Saving over Two SMBs Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge 2 3 MDXXCJA VDRM V(BO) V V TISP1070H3BJ -58 -70 TISP1080H3BJ -65 -80 TISP1095H3BJ -75 -95 TISP1120H3BJ -95 -120 Device Name 1 Device Symbol 1 (T or R) 3 (R or T) Rated for International Surge Wave Shapes Wave Shape IPPSM Standard SD1TAA 2 (G) A 2/10 GR-1089-CORE 500 8/20 IEC 61000-4-5 300 10/160 TIA-968-A (FCC Part 68) 200 10/700 ITU-T K.20/21/45 150 10/560 TIA-968-A (FCC Part 68) 120 10/1000 GR-1089-CORE 100 ............................................... UL Recognized Component Description These dual unidirectional thyristor devices protect SLICs and ISDN power feeds in central office, access and customer premises equipment against overvoltages on the telecom line. Each protector section consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. In the negative polarity, the thyristor allows signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages exceeding VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the thyristor switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the thyristor. When the diverted current falls below the holding current, IH, level the thyristor switches off and restores normal system operation. Positive overvoltages are limited by the conduction of the anti-parallel diode. The TISP1xxxH3BJ is available in four voltages and has a 100 A 10/1000 current rating. These protectors have been designed particularly for use in equipment that must meet the following standards and recommendations: GR-1089-CORE, TIA-968-A (replaces FCC Part 68), ITU-T K.20, K.21 and K.45. Housed in a SMB03 package (3-pin modified SMB/DO-214AA), these parts are space efficient to replace protection designs of 100 A 10/1000 or less which use multiple SMBs or a 6-pin SMT package. How to Order Device Package TISP1xxxH3BJ SMB03 (3-pin modified SMB /DO-214AA) Carrier For Standard Termination Finish Order As Embossed Tape Reeled TISP1xxxH3BJR Insert xxx value corresponding to device name. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. For Lead Free Termination Finish Order As TISP1xxxH3BJR-S Marking Code Std. Qty. 1xxxH3 3000 TISP1xxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value '1080 Repetitive peak off-state voltage, (Terminals 1-2 and 3-2) (see Note 1) '1095 Unit -58 '1070 -65 VDRM V -75 -95 '1120 Non-repetitive peak on-state pulse current (see Notes 2 and 3) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 2x500 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 2x300 10/160 (TIA-968-A (replaces FCC Part 68), 10/160 µs voltage wave shape) 5/310 (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21) 2x200 IPPSM 2x150 5/320 (TIA-968-A (replaces FCC Part 68), 9/720 µs voltage wave shape) 2x150 10/560 (TIA-968-A (replaces FCC Part 68), 10/560 µs voltage wave shape) 2x120 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 2x100 A Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 cycle 2x30 ITSM 60 Hz, 1 cycle A 2x35 2x1.2 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 500 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C Junction temperature Storage temperature range NOTES: 1. At -40 °C derate linearly to 0.93 x V DRM (25 °C) 2. Initially the device must be in thermal equilibrium with T J = 25 °C. 3. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and 3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM Repetitive peak offstate current Test Conditions VD = VDRM V(BO) AC breakover voltage dv/dt = -250 V/ms, RSOURCE = 300 Ω I(BO) Breakover current dv/dt = -250 V/ms, RSOURCE = 300 Ω Holding current IT = -5 A, di/dt = +30 mA/ms IH dv/dt Critical rate of rise of off-state voltage Min ID Off-state current VD = -50 V Forward voltage IF = +5 A, tW = 500 µs Max -5 TA = 85 °C -10 '1070 -70 '1080 -80 '1095 -95 '1120 -120 -800 Linear voltage ramp, Maximum ramp value < 0.85 x VDRM VF Typ TA = 25 °C TA = 85 °C Unit µA V mA -150 mA -5 kV/µs -10 µA 3 V JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxH3BJ Overvoltage Protector Series Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min '1070 f = 1 MHz, Coff '1070 58 '1080 55 '1095 50 '1120 42 '1095 Off-state capacitance f = 1 MHz, '1120 161 152 139 116 '1080 Vd = 1 V rms, VD = -2 V Vd = 1 V rms, VD = -50 V Typ Max Unit pF Thermal Characteristics Parameter Test Conditions Min Typ EIA/JESD51-3 PCB, 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) , TA = 25 °C Unit 113 TA = 25 °C, (see Note 4) R θJA Junction to free air thermal resistance Max °C/W 52 NOTE 4: EIA/JESD51-2 environment and PCB have standard footprint dimensions connected with 5 A rated printed wiring track widths. JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxH3BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I IPPSM Forward Conduction Characteristic IFSM IF VF V DRM -v VD +v ID IDRM IH I(BO) VT V(BO) IT ITSM Quadrant III IPPSM Switching Characteristic -i PMXXACd Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2 All Measurements are Referenced to Terminal 2 +i Quadrant I IPPSM Switching Characteristic ITSM IT V(BO) VT I(BO) IH V DRM -v VD IDRM ID ID IDRM VD V DRM +v IH I(BO) V(BO) VT IT ITSM Quadrant III Switching Characteristic IPPSM -i PM4XAG Figure 2. Voltage-Current Characteristic for Terminal Pair 1-3 All Measurements are Referenced to Terminal 3 JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxH3BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC-TC3xx-001-a 100 1.10 Normalized Breakover Voltage ID - Off-State Current - µA 10 1 0.1 1 V D = -50 V 0.01 0.001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC-TC3xx-002-a 1.05 1.00 0.95 -25 Figure 3. 2.0 1.5 70 50 40 30 20 15 10 7 5 4 3 VF VT 2 1.5 1 0.7 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC-TC3xx-004-a TA = 25 °C tW < 100 µs Normalized Holding Current IT , IF - On-State Current, Forward Current - A 100 150 Figure 4. ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES 200 150 0 25 50 75 100 125 TJ - Junction Temperature - °C 1.0 0.9 0.8 0.7 0.6 0.5 1 1.5 2 3 4 5 7 10 V T , V F- On-State Voltage, Forward Voltage - V Figure 5. JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 6. 150 TISP1xxxH3BJ Overvoltage Protector Series Typical Characteristics (Continued) NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC-TC3xx-005-a Capacitance Normalized to V D = -2 1.5 TJ = 25°C V d = 1 Vrms 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 2 3 5 10 20 30 V D - Negative Off-state Voltage - V 50 Figure 7. Rating and Thermal Information NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI-TC3xx-001-a ITSM(t) - Non-Repetitive Peak On-State Current - A 30 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*V GEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 °C SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t) 20 15 10 9 8 7 6 5 4 3 2 1.5 1 0.1 1 10 100 1000 t - Current Duration - s Figure 8. JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. 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