oH S CO M PL IA NT TISP4A250H3BJ *R ASYMMETRICAL-BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR TISP4A250H3BJ Overvoltage Protector RING Line Protection for: — LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282 SMB Package (Top View) Voltages Optimized for: — Battery-Backed Ringing Circuits Maximum Ringing a.c..................................................104 Vrms Maximum Battery Voltage ................................................. -52 V Device Name TISP4A250H3BJ VDRM V(BO) V V +100 +125 -200 -250 (Ground) 1 2 (Ring) Terminal typical application names shown in parenthesis MD-SMB-006-a Device Symbol (Ring) Rated for International Surge Wave Shapes IPPSM Wave Shape Standard 2/10 GR-1089-CORE 500 300 A 8/20 IEC 61000-4-5 10/160 TIA-968-A 250 10/700 ITU-T K.20/21/45 200 10/560 TIA-968-A 160 10/1000 GR-1089-CORE 100 (Ground) SD-TISP4A-001-a ..........................................UL Recognized Component How To Order Device Package Carrier Order As Marking Code Standard Quantity TISP4A250H3BJ SMB Embossed Tape Reeled TISP4A250H3BJR-S 4A250H 3000 Description The TISP4A250H3BJ is an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the Ring line terminal of the LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282. The TISP4A250H3BJ must be connected with bar-indexed terminal 1 to the protective Ground, and terminal 2 to the Ring conductor. The TISP4A250H3BJ voltages are chosen to give adequate LCAS ring line terminal protection for all switch conditions. The most potentially stressful condition is low level power cross when the LCAS switches are closed. Under this condition, the TISP4A250H3BJ limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches. Under open-circuit ringing conditions, the line Ring conductor will have high peak voltages. For battery backed ringing, the Ring conductor will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A250H3BJ has a similar voltage asymmetry and will allow the maximum possible ringing voltage, while giving the most effective protection. On a connected line, the Tip conductor will have much smaller voltage levels than the open-circuit Ring conductor values. Here a TISP4xxxH3BJ series symmetrical voltage protector gives adequate protection. Overvoltages are initially clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. This switching action removes the high voltage stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverted through the protector. The high holding (switch off) current prevents d.c. latchup as the diverted current subsides. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4A250H3BJ Overvoltage Protector Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Rep et it ive p eak off- st at e volt age (see Not e 1) Symbol Value Unit VDRM +100 -200 V IPPSM ±500 ±300 ±250 ±200 ±200 ±160 ±100 A ITSM 55 60 2.2 A di T /dt 400 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C Non-repetitive peak impulse current (see Notes 2 and 3) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator) 10/160 µs (TIA-968-A, 10/160 µs voltage wave shape) 5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45) 5/320 µs (TIA-968-A, 9/720 µs voltage wave shape) 10/560 µs (TIA-968-A, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms, 50 Hz (full sine wave) 16.7 ms, 60 Hz (full sine wave) 1000 s, 50 Hz or 60 Hz a.c. Initial rate of rise of on-state currrent, exponential current ramp. Maximum ramp value < 200 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. See Figure 6 for voltages at other temperatures. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 5 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. Overload Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Maximum overload on-state current without open circuit, 50 Hz or 60 Hz a.c. (see note 5) 0.03 s 0.07 s 1.6 s 5.0 s 1000 s NOTE: IT(OV)M Value 60 40 8 7 2.2 Unit A rms 5. Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress levels may damage the TISP4A250H3BJ silicon die. After test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short-circuit fault mode. In the short-circuit fault mode, the following equipment is protected as the device is a permanent short across the line. The equipment would be unprotected if an open-circuit fault mode developed. NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4A250H3BJ Overvoltage Protector Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions M in Typ TA = 25 °C TA = 85 °C IDRM Repetitive peak off-state current V(BO) Breakover voltage I(BO) Breakover current dv/dt = ±250 V/ms, R SOURCE = 300 Ω VT On-state voltage I T = ±5 A, t w = 100 µs IH Holding current I T = ± 5 A, d i/ d t = ± 30 mA/ ms dv/dt Critical rate of rise of off-state voltage Linear voltage ramp Maximum ramp value < 0.85V DRM CO Off-state capacitance f = 1 MHz, V d = 1 V rms V D = VDRM dv/dt = ±250 V/ms, R SOURCE = 300 Ω ±150 ± 15 0 M ax Unit ±5 ±10 µA +125 -250 V ±600 mA ±3 V ± 600 mA ±5 kV/µs VD = 2 V 72 pF M ax Unit Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter R JA Junction to ambien t thermal resistance Test Conditions 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) NOTE: M in Typ EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 6) 113 °C/W 50 6. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4A250H3BJ Overvoltage Protector Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V(BR)M VDRM -v VD ID ID I(BR) V(BR) V(BR) I(BR) I DRM VD IDRM +v VDRM V(BR)M IH I(BO) VT V(BO) IT ITRM ITSM Quadrant III Switching Characteristic I PPSM PM-TISP4Axxx-002-a -i Figure 1. Voltage-Current Characterist ic for the Ring and Ground Terminals All Measurements are Referenced to the Ground Terminal NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4A250H3BJ Overvoltage Protector Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TCHAG 100 1.10 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF VD = ±50 V Normalized Breakover Voltage |ID| - Off-State Current - µA 10 1 0·1 0·01 0·001 1.05 1.00 0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 2. Figure 3. 2.0 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4HAD Normalized Holding Current 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 4. NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 150 150 TISP4A250H3BJ Overvoltage Protector Rating and Thermal Information VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4HAC 30 TI4HADC 1.00 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 20 15 0.99 0.98 10 9 8 7 6 5 Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 4 0.97 0.96 0.95 3 0.94 2 1.5 0·1 1 10 100 t - Current Duration - s Figure 5. 1000 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 6. NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4A250H3BJ Overvoltage Protector VDD Applications Information ATEST1 ARINGING1 SW Tip1 SW ALINE 1 B1250T Telefuse™ SW ASLIC1 Tip TISP4125H3BJ Ground FGND1 Ground TISP4A250H3BJ Ring BLINE 1 Ring1 BSLIC1 SW B1250T Telefuse™ SW SW BRINGING1 BTEST1 Le79232 Dual SLIC Battery Monitor VBH ATEST2 ARINGING2 SW SW SW ALINE2 Tip2 B1250T Telefuse™ ASLIC2 Tip TISP4125H3BJ Ground FGND2 Ground Le75282 Dual LCAS TISP4A250H3BJ Ring BLINE2 Ring2 B1250T Telefuse™ BSLIC2 SW SW SW P1' BRINGING2 BTEST2 Switch Control Logic Latch P2' P3' LD1 LD2 TSD1 TSD2 OFF1 DGND CFG OFF2 Figure 7. Typical Application Circuit NOVEMBER 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. AI-TISP4A-001-a Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Technical Assistance Region The Americas: Europe: Asia-Pacific: www.bourns.com Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. COPYRIGHT© 2007, BOURNS, INC. LITHO IN U.S.A. e 05/07 TSP0705