BOURNS TISP4A250H3BJ

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TISP4A250H3BJ
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ASYMMETRICAL-BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTOR
TISP4A250H3BJ Overvoltage Protector
RING Line Protection for:
— LCAS (Line Card Access Switch) such as Le75181,
Le75183 and Le75282
SMB Package (Top View)
Voltages Optimized for:
— Battery-Backed Ringing Circuits
Maximum Ringing a.c..................................................104 Vrms
Maximum Battery Voltage ................................................. -52 V
Device Name
TISP4A250H3BJ
VDRM
V(BO)
V
V
+100
+125
-200
-250
(Ground) 1
2 (Ring)
Terminal typical application names
shown in parenthesis
MD-SMB-006-a
Device Symbol
(Ring)
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
2/10
GR-1089-CORE
500
300
A
8/20
IEC 61000-4-5
10/160
TIA-968-A
250
10/700
ITU-T K.20/21/45
200
10/560
TIA-968-A
160
10/1000
GR-1089-CORE
100
(Ground)
SD-TISP4A-001-a
..........................................UL Recognized Component
How To Order
Device
Package
Carrier
Order As
Marking Code
Standard Quantity
TISP4A250H3BJ
SMB
Embossed Tape Reeled
TISP4A250H3BJR-S
4A250H
3000
Description
The TISP4A250H3BJ is an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the Ring line
terminal of the LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282. The TISP4A250H3BJ must be connected
with bar-indexed terminal 1 to the protective Ground, and terminal 2 to the Ring conductor.
The TISP4A250H3BJ voltages are chosen to give adequate LCAS ring line terminal protection for all switch conditions. The most
potentially stressful condition is low level power cross when the LCAS switches are closed. Under this condition, the TISP4A250H3BJ
limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches.
Under open-circuit ringing conditions, the line Ring conductor will have high peak voltages. For battery backed ringing, the Ring
conductor will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A250H3BJ has a
similar voltage asymmetry and will allow the maximum possible ringing voltage, while giving the most effective protection. On a connected
line, the Tip conductor will have much smaller voltage levels than the open-circuit Ring conductor values. Here a TISP4xxxH3BJ series
symmetrical voltage protector gives adequate protection.
Overvoltages are initially clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage
will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. This switching action removes
the high voltage stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverted through the
protector. The high holding (switch off) current prevents d.c. latchup as the diverted current subsides.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Rep et it ive p eak off- st at e volt age (see Not e 1)
Symbol
Value
Unit
VDRM
+100
-200
V
IPPSM
±500
±300
±250
±200
±200
±160
±100
A
ITSM
55
60
2.2
A
di T /dt
400
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
Non-repetitive peak impulse current (see Notes 2 and 3)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s, 50 Hz or 60 Hz a.c.
Initial rate of rise of on-state currrent, exponential current ramp. Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
See Figure 6 for voltages at other temperatures.
Initially the device must be in thermal equilibrium with TJ = 25 °C.
The surge may be repeated after the device returns to its initial conditions.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 5 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C.
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Maximum overload on-state current without open circuit, 50 Hz or 60 Hz a.c. (see note 5)
0.03 s
0.07 s
1.6 s
5.0 s
1000 s
NOTE:
IT(OV)M
Value
60
40
8
7
2.2
Unit
A rms
5. Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress levels
may damage the TISP4A250H3BJ silicon die. After test, the pass criterion is either that the device is functional or, if it is faulty, that
it has a short-circuit fault mode. In the short-circuit fault mode, the following equipment is protected as the device is a permanent
short across the line. The equipment would be unprotected if an open-circuit fault mode developed.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
M in
Typ
TA = 25 °C
TA = 85 °C
IDRM
Repetitive peak off-state current
V(BO)
Breakover voltage
I(BO)
Breakover current
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
VT
On-state voltage
I T = ±5 A, t w = 100 µs
IH
Holding current
I T = ± 5 A, d i/ d t = ± 30 mA/ ms
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V DRM
CO
Off-state capacitance
f = 1 MHz, V d = 1 V rms
V D = VDRM
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
±150
± 15 0
M ax
Unit
±5
±10
µA
+125
-250
V
±600
mA
±3
V
± 600
mA
±5
kV/µs
VD = 2 V
72
pF
M ax
Unit
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
R
JA
Junction to ambien t thermal resistance
Test Conditions
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000)
NOTE:
M in
Typ
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 6)
113
°C/W
50
6. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Parameter Measurement Information
+i
I PPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V(BR)M
VDRM
-v
VD
ID
ID
I(BR)
V(BR)
V(BR)
I(BR)
I DRM
VD
IDRM
+v
VDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
I PPSM
PM-TISP4Axxx-002-a
-i
Figure 1. Voltage-Current Characterist ic for the Ring and Ground Terminals
All Measurements are Referenced to the Ground Terminal
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAG
100
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4HAF
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - µA
10
1
0·1
0·01
0·001
1.05
1.00
0.95
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4HAD
Normalized Holding Current
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 4.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
150
150
TISP4A250H3BJ Overvoltage Protector
Rating and Thermal Information
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4HAC
30
TI4HADC
1.00
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
0.99
0.98
10
9
8
7
6
5
Derating Factor
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
4
0.97
0.96
0.95
3
0.94
2
1.5
0·1
1
10
100
t - Current Duration - s
Figure 5.
1000
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 6.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
VDD
Applications Information
ATEST1
ARINGING1
SW
Tip1
SW
ALINE 1
B1250T
Telefuse™
SW
ASLIC1
Tip
TISP4125H3BJ
Ground
FGND1
Ground
TISP4A250H3BJ
Ring
BLINE 1
Ring1
BSLIC1
SW
B1250T
Telefuse™
SW
SW
BRINGING1
BTEST1
Le79232
Dual SLIC
Battery
Monitor
VBH
ATEST2
ARINGING2
SW
SW
SW
ALINE2
Tip2
B1250T
Telefuse™
ASLIC2
Tip
TISP4125H3BJ
Ground
FGND2
Ground
Le75282
Dual LCAS
TISP4A250H3BJ
Ring
BLINE2
Ring2
B1250T
Telefuse™
BSLIC2
SW
SW
SW
P1'
BRINGING2
BTEST2
Switch
Control
Logic
Latch
P2'
P3'
LD1
LD2
TSD1
TSD2
OFF1
DGND
CFG
OFF2
Figure 7. Typical Application Circuit
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
AI-TISP4A-001-a
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
www.bourns.com
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COPYRIGHT© 2007, BOURNS, INC. LITHO IN U.S.A. e 05/07 TSP0705