oH V SC AV ER OM A I S IO P L L A N IA BL S NT E TISP3072F3,TISP3082F3 *R LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 (LV) Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3072F3 ‘3082F3 D Package (Top View) T 1 8 G VDRM V(BO) NC 2 7 G V 58 66 V 72 82 NC 3 6 G R 4 5 G NC - No internal connection Planar Passivated Junctions Low Off-State Current <10 µA SL Package (Top View) Rated for International Surge Wave Shapes ITSP Waveshape Standard A 2/10 µs GR-1089-CORE 80 8/20 µs IEC 61000-4-5 70 10/160 µs FCC Part 68 60 ITU-T K.20/21 10/700 µs 50 FCC Part 68 10/560 µs FCC Part 68 45 10/1000 µs GR-1089-CORE 35 T 1 G 2 R 3 MD1XAB Device Symbol T R .............................................. UL Recognized Component SD3XAA G Terminals T, R and G correspond to the alternative line designators of A, B and C Description These low-voltage dual bidirectional thyristor protectors are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. How To Order Device Package D, Small-outline TISP30xxF3 SL, Single-in-line Carrier For Standard Termination Finish Order As Tape And Reeled TISP30xxF3DR Tube TISP30xxF3SL For Lead Free Termination Finish Order As TISP30xxF3DR-S TISP30xxF3SL-S Insert xx value corresponding to protection voltages of 72 and 82 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, 0 °C < TA < 70 °C ‘3072F3 ‘3082F3 Symbol Value Unit VDRM ±58 ±66 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 80 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 50 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (FCC Part 68, 10/160 voltage wave shape) 60 IPPSM 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50 10/560 (FCC Part 68, 10/560 voltage wave shape) 45 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35 Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3) 50 Hz, 1 s A 55 D Package SL Package Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A Junction temperature Storage temperature range 4.3 7.1 A diT/dt 250 A/µs TJ -65 to +150 °C Tstg -65 to +150 °C ITSM NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP ® must be in thermal equilibrium with 0 °C < TJ <70 ° C. The surge may be repeated after the TISP ® returns to its initial conditions. 3. Above 70 °C, derate linearly to zero at 150 °C lead temperature. Electrical Characteristics for the T and R terminals, TA = 25 °C (Unless Otherwise Noted) ID Parameter Repetitive peak offstate current Off-state current Coff Off-state capacitance IDRM Test Conditions Min Typ Max Unit VD = ±2VDRM, 0 °C < TA < 70 °C ±10 µA VD = ±50 V f = 100 kHz, Vd = 100 mV , VD = 0, Third terminal voltage = -50 V to +50 V (see Notes 4 and 5) ±10 µA D Package 0.05 0.15 SL Package 0.03 0.1 pF NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 5. Further details on capacitance are given in the Applications Information section. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current VD = ±VDRM, 0 °C < TA < 70 °C V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω V(BO) Impulse breakover voltage I(BO) VT IH dv/dt ID Coff Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Off-state capacitance Test Conditions Min Typ ‘3072F3 ‘3082F3 dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V RSOURCE = 50 Ω dv/dt = ±250 V/ms, RSOURCE = 300 Ω IT = ±5 A, tW = 100 µs IT = ±5 A, di/dt = -/+30 mA/ms ‘3072F3 ‘3082F3 Unit ±10 µA ±72 ±82 V ±86 ±96 V ±0.15 A V A ±5 kV/µs ±0.1 Linear voltage ramp, Maximum ramp value < 0.85VDRM Max VD = ±50 V f = 1 MHz, Vd = 0.1 V r.m.s., VD = 0 f = 1 MHz, Vd = 0.1 V r.m.s., VD = -5 V f = 1 MHz, Vd = 0.1 V r.m.s., VD = -50 V (see Notes 5 and 6) ±0.6 ±3 82 49 25 ±10 140 85 40 µA pF NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 7. Further details on capacitance are given in the Applications Information section. Thermal Characteristics Parameter RθJA Junction to free air thermal resistance Min Test Conditions Ptot = 0.8 W, TA = 25 °C 5 cm2, FR4 PCB Typ Max D Package 160 SL Package 135 Unit °C/W MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH V(BR)M VDRM -v I(BR) V(BR) V(BR) I(BR) IDRM ID VD ID VD IDRM +v VDRM V(BR)M IH I(BO) V(BO) VT IT ITSM Quadrant III ITSP Switching Characteristic -i Figure 1. Voltage-Current Characteristics for any Terminal Pair MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PMXXAA TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and G or T and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3LAI TC3LAF Normalized to V(BR) I(BR) = 100 µA and 25 °C Normalized Breakdown Voltages 1.2 ID - Off-State Current - µ A 10 1 VD = 50 V 0·1 VD = -50 V 0·01 0·001 Positive Polarity 1.1 V(BR)M V(BO) 1.0 V(BR) 0.9 -25 0 25 50 75 100 125 150 -25 0 TJ - Junction Temperature - °C 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 2. Figure 3. NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3LAJ ON-STATE CURRENT vs ON-STATE VOLTAGE TC3LAL 100 Normalized to V(BR) I(BR) = 100 µA and 25 °C Negative Polarity IT - On-State Current - A Normalized Breakdown Voltages 1.2 1.1 V(BR)M V(BO) 1.0 10 150 °C V(BR) 25 °C -40 °C 1 0.9 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 4. 125 150 1 2 1 3 4 5 6 7 8 9 0 VT - On-State Voltage - V Figure 5. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series 1.0 0.9 0.8 0.7 HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE TC3LAH 0.6 0.5 1.3 Normalized Breakover Voltage IH, I(BO) - Holding Current, Breakover Current - A Typical Characteristics - R and G or T and G Terminals I(BO) 0.4 0.3 IH 0.2 0.1 -25 0 25 50 75 100 125 NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT 1.2 Positive 1.1 Negative 1.0 0·001 150 TJ - Junction Temperature - °C 0·01 0·1 1 10 100 di/dt - Rate of Rise of Principle Current - A/µs Figure 6. 100 TC3LAB Figure 7. OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE TC3LAE 500 TC3LAD Off-State Capacitance - pF Off-State Capacitance - pF Positive Bias Negative Bias 100 Terminal Bias = 0 Terminal Bias = 50 V Terminal Bias = -50 V 10 0·1 10 1 10 Terminal Voltage - V Figure 8. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 50 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 9. 125 150 TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and G or T and G Terminals SURGE CURRENT vs DECAY TIME Maximum Surge Current - A 1000 TC3LAA 100 10 2 10 100 1000 Decay Time - µs Figure 10. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3LAK TC3LAG VD = ±50 V Normalized to V(BR) Normalized Breakdown Voltages 1.2 ID - Off-State Current - µ A 10 1 0·1 0·01 0·001 Both Polarities 1.1 V(BR)M V(BO) 1.0 V(BR) 0.9 -25 0 25 50 75 100 125 150 -25 TJ - Junction Temperature - °C 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 11. Figure 12. NORMALIZED BREAKDOWN VOLTAGES vs RATE OF RISE OF PRINCIPAL CURRENT 1.3 OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE TC3LAC 100 90 80 70 60 Off-State Capacitance - fF Normalized Breakover Voltage I(BR) = 100 µA and 25 °C 1.2 1.1 TC3XAA D Package 50 40 SL Package 30 20 Both Voltage Polarities 1.0 0·001 0·01 0·1 1 10 di/dt - Rate of Rise of Principle Current - A/µs Figure 13. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 100 10 0·1 1 Terminal Voltage - V Figure 14. 10 50 TISP30xxF3 (LV) Overvoltage Protector Series Thermal Information VGEN = 250 Vrms RGEN = 10 to 150 Ω 10 SL Package D Package 1 0·1 1 10 100 t - Current Duration - s Figure 15. THERMAL RESPONSE Zθ JA - Transient Thermal Impedance - °C/W ITRMS - Maximum Non-Recurrent 50 Hz Current - A MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION TI3LAA 1000 TI3MAA 100 D Package SL Package 10 1 0·0001 0·001 0·01 0·1 1 10 100 1000 t - Power Pulse Duration - s Figure 16. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series APPLICATIONS INFORMATION Electrical Characteristics The electrical characteristics of a TISP® device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient, the power dissipated and the thermal response curve, Zθ (see M. J. Maytum, “Transient Suppressor Dynamic Parameters.” TI Technical Journal, vol. 6, No. 4, pp.63-70, July-August 1989). Lightning Surge Wave Shape Notation Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time . A 50 A, 5/310 µs wave shape would have a peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP® device surge current graph comprehends the wave shapes of commonly used surges. Generators There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g., 10/1000 µs open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g., 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. Current Rating When the TISP® deviceswitches into the on-state, it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP® surge capability. As an example, the ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when driving into a short circuit. Thus, the TISP® surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 µs on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below: Standard Open Circuit Voltage Short Circuit Current ITU-T K.21 1.5 kV, 10/700 µs 37.5 A, 5/310 µs ITU-T K.20 1 kV, 10/700 µs 25 A, 5/310 µs IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 µs 500 A, 8/20 µs Telcordia GR-1089-CORE 1.0 kV, 10/1000 µs 100 A, 10/1000 µs Telcordia GR-1089-CORE 2.5 kV, 2/10 µs 500 A, 2/10 µs FCC Part 68, Type A 1.5 kV, <10/>160 µs 200 A,<10/>160 µs FCC Part 68,Type A 800 V, <10/>560 µs 100 A,<10/>160 µs FCC Part 68, Type B 1.5 kV, 9/720 µs 37.5 A, 5/320 µs Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω (1000/100). If the equipment has a series resistance of 25 Ω, then the surge current requirement of the TISP® device becomes 29 A (1000/35) and not 100 A. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series APPLICATIONS INFORMATION Protection Voltage The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 7). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP® breakdown region. Capacitance Off-state Capacitance The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation of capacitance value with a.c. bias is shown in Figure 17. When VD >> Vd, the capacitance value is independent on the value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies. NORMALIZED CAPACITANCE vs RMS AC TEST VOLTAGE 1.05 AIXXAA Normalized Capacitance 1.00 0.95 0.90 0.85 0.80 Normalized to Vd = 100 mV 0.75 DC Bias, VD = 0 0.70 1 10 100 1000 Vd - RMS AC Test Voltage - mV Figure 17. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP30xxF3 (LV) Overvoltage Protector Series APPLICATIONS INFORMATION Longitudinal Balance Figure 18 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, CTG , CRG and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then CTG >C RG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +C RG/2. All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included. T T (CTG-CRG) CTG CRG Equipment G Equipment G CTR CTR CRG CRG R AIXXAB R CTG > CRG Equivalent Unbalance Figure 18. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.