A Product Line of Diodes Incorporated DMN2028USS ADVANCE INFORMATION 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max V(BR)DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V 8.3A 20V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Output Leakage ESD Protected Up to 2kV Lead Free/RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 1) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Battery charging • Power management functions • • • • DC-DC converters • • Portable power adaptors SO-8 Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) S D S D S D G D D G S ESD PROTECTED TO 2kV Top View Equivalent Circuit Top View Ordering Information (Note 1) Product DMN2028USS-13 Notes: Marking N2028US Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com Marking Information N2028US YY WW DMN2028USS Document number: DS32075 Rev. 3 - 2 = Manufacturer’s Marking N2028US = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01-53) 1 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN2028USS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V Pulsed Drain current VGS = 4.5V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 20 ±12 9.8 7.9 7.3 45.0 6.0 45.0 Unit Value 1.56 12.5 2.81 22.5 80.0 44.5 37.0 -55 to 150 Unit V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 2) PD (Note 3) (Note 2) (Note 3) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN2028USS Document number: DS32075 Rev. 3 - 2 2 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics 1.6 Max Power Dissipation (W) ID Drain Current (A) RDS(on) Limited 10 1 DC 1s 100m 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 70 25mm x 25mm 1oz FR4 60 T amb=25°C 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS32075 Rev. 3 - 2 80 100 Pulse Width (s) DMN2028USS 60 Derating Curve Maximum Power (W) 80 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION DMN2028USS 3 of 8 www.diodes.com Pulse Power Dissipation October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.6 RDS (ON) - |Yfs| VSD - 1.3 20 28 1.3 V Static Drain-Source On-Resistance (Note 6) 1.0 11 15 16 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1000 166 158 1.51 7.0 11.6 2.7 3.4 11.67 12.49 35.89 12.33 - Forward Transfer Admittance (Note 6 & 7) Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) mΩ S V pF Ω nC ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V VDS = 10V ID = 9.4A VGS = 4.5V VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperatures. 30 20 VGS = 10V VGS = 4.5V 25 VGS = 4.0V ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) ADVANCE INFORMATION DMN2028USS VGS = 3.5V 20 VGS = 3.0V VGS = 2.5V 15 VGS = 2.0V 10 5 15 10 5 TA = 150°C T A = 125°C VGS = 1.8V T A = 85°C TA = 25°C TA = -55°C 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2028USS Document number: DS32075 Rev. 3 - 2 2 4 of 8 www.diodes.com 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.030 0.025 0.020 0.015 VGS = 2.5V 0.010 VGS = 4.5V 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.030 0.025 T A = 150°C 0.015 TA = 125°C T A = 85°C 0.010 T A = 25°C T A = -55°C 0.005 0 20 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.030 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.020 1.6 1.4 1.2 1.0 VGS = 2.5V ID = 5A 0.8 VGS = 4.5V ID = 10A 0.6 -50 0.025 0.020 0.010 VGS = 4.5V ID = 10A 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 20 2.5 IS, SOURCE CURRENT (A) 16 2.0 1.5 1.0 ID = 1mA ID = 250µA 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2028USS Document number: DS32075 Rev. 3 - 2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3.0 0.5 VGS = 2.5V ID = 5A 0.015 Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN2028USS 5 of 8 www.diodes.com 12 TA = 25°C 8 4 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2028USS 10,000 1,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 100 TA = 150°C 1,000 TA = 125°C 100 T A = 85°C 10 TA = 25°C 1 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 10,000 VDS = 15V ID = 9.4A 8 6 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2028USS Document number: DS32075 Rev. 3 - 2 30 6 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2028USS h x 45° ADVANCE INFORMATION Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMN2028USS Document number: DS32075 Rev. 3 - 2 7 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN2028USS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMN2028USS Document number: DS32075 Rev. 3 - 2 8 of 8 www.diodes.com October 2010 © Diodes Incorporated