A Product Line of Diodes Incorporated DMP4050SSD ADVANCE INFORMATION 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • ID V(BR)DSS RDS(on) Max TA = 25°C (Notes 4 & 6) 50mΩ @ VGS = -10V -5.2A 79mΩ @ VGS = -4.5V -4.1A -40V Low on-resistance • Fast switching speed • “Lead-Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • Case: SO-8 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) • Motor control • Backlighting • DC-DC Converters • Power management functions SO-8 S1 D1 G1 D1 S2 D2 G2 D2 Top View D1 G1 D2 G2 S1 S2 Equivalent Circuit Top View Ordering Information (Note 1) Product DMP4050SSD-13 Note: Marking P4050SD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information P4050SD YY WW DMP4050SSD Document Number DS32107 Rev 2 - 2 = Manufacturer’s Marking P4050SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) 1 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Notes 4 & 6) TA = 70°C (Notes 4 & 6) (Notes 3 & 6) (Notes 5 & 6) (Notes 4 & 6) (Notes 5 & 6) Symbol VDSS VGS ID IDM IS ISM Value -40 ±20 -5.2 -4.2 -4.0 -20.0 -3.2 -20.0 Unit V V Value 1.25 10.0 1.8 14.3 2.14 17.2 100 70 58 53 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 6) Power dissipation Linear derating factor (Notes 3 & 7) PD (Notes 4 & 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Notes 3 & 6) (Notes 3 & 7) (Notes 4 & 6) (Notes 6 & 8) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 6. For a dual device with one active die. 7. For a device with two active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). DMP4050SSD Document Number DS32107 Rev 2 - 2 2 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics Max Power Dissipation (W) -ID Drain Current (A) RDS(on) Limited 10 1 DC 100m 1s 100ms 10m 1m 100m 10ms Single Pulse T amb=25°C 1ms 100µs One active die 1 10 -VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 Single Pulse D=0.05 D=0.1 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32107 Rev 2 - 2 80 100 Pulse Width (s) DMP4050SSD 60 Derating Curve Maximum Power (W) 110 T amb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 10m 100m 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION DMP4050SSD Pulse Power Dissipation 3 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) ⎯ Forward Transconductance (Notes 9 & 10) Diode Forward Voltage (Note 9) Reverse recovery time (Note 10) Reverse recovery charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 11) Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = -250μA, VDS = VGS VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A VDS = -15V, ID = -6A IS = -6A, VGS = 0V ⎯ -3.0 0.050 0.079 ⎯ -1.2 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 9) ⎯ 0.038 0.055 14 -0.86 18 12.7 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 674 115 67.7 6.9 13.9 2 3.4 1.9 3.1 31.5 12.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS = -2A, di/dt = 100A/μs VDS = -20V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -20V ID = -6A VDD = -20V, VGS = -10V ID = -1A, RG ≅ 6.0Ω 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. DMP4050SSD Document Number DS32107 Rev 2 - 2 4 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 4V -ID Drain Current (A) 10 3.5V 3V 1 2.5V 0.1 -VGS 0.01 4V 3.5V 10 3V 2.5V 1 2V 0.1 -VGS 0.01 0.1 10 1 10 0.1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -VDS = 10V 1 T = 150°C T = 25°C 0.1 1.5 2.0 2.5 3.0 3.5 1.6 1 3.5V 4V 4.5V 10V 0.1 1 10 -ISD Reverse Drain Current (A) 3V 0.1 1.2 1.0 VGS(th) 0.8 DMP4050SSD Document Number DS32107 Rev 2 - 2 VGS = VDS ID = -250uA 0.6 -50 0 50 100 150 10 1 T = 150°C T = 25°C 0.1 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) On-Resistance v Drain Current RDS(on) Normalised Curves v Temperature T = 25°C 2.5V ID = -12A Tj Junction Temperature (°C) Typical Transfer Characteristics -VGS VGS = -10V 1.4 -VGS Gate-Source Voltage (V) 0.01 0.01 1 -VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10V T = 150°C -ID Drain Current (A) 10V T = 25°C RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION DMP4050SSD Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics - continued 10 -VGS Gate-Source Voltage (V) 1000 VGS = 0V C Capacitance (pF) ADVANCE INFORMATION DMP4050SSD f = 1MHz 800 CISS 600 COSS CRSS 400 200 0 0.1 1 10 8 6 4 VDS = -20V 2 0 ID = -6A 0 2 4 6 8 10 12 14 Q - Charge (nC) -VDS - Drain - Source Voltage (V) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Gate charge test circuit Basic gate charge waveform VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms DMP4050SSD Document Number DS32107 Rev 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) 6 of 8 www.diodes.com Switching time test circuit November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSD Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMP4050SSD Document Number DS32107 Rev 2 - 2 7 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMP4050SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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