1N4728A to 1N4764A www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • Silicon planar power Zener diodes • For use in stabilizing and clipping circuits with high power rating • Standard Zener voltage tolerance is ± 5 % • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 3.3 to 100 V Test current IZT 2.5 to 76 mA VZ specification Thermal equilibrium Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 1N4728A to 1N4764A 1N4728A to 1N4764A -series-TR 5000 per 13" reel 25 000/box 1N4728A to 1N4764A 1N4728A to 1N4764A-series-TAP 5000 per ammopack (52 mm tape) 25 000/box PACKAGE PACKAGE NAME DO-41 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 310 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Ptot 1300 mW IZ PV/VZ mA RthJA 110 K/W Tj 175 °C Tstg - 65 to + 175 °C VF 1.2 V Zener current Thermal resistance junction to ambient air Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Junction temperature Storage temperature range Forward voltage (max.) Rev. 2.3. 13-Nov-12 IF = 200 mA Document Number: 85816 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4728A to 1N4764A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER TEST CURRENT VZ at IZT1 IZT1 IZT2 V mA mA NOM. REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz IR at VR ZZT at IZT1 ZZK at IZT2 IR IZM mA mA μA V MAX. SURGE CURRENT (3) REGULATOR CURRENT (2) TYP. MAX. 1N4728A 3.3 76 1 100 1 10 400 1380 MAX. 276 1N4729A 3.6 69 1 100 1 10 400 1260 252 1N4730A 3.9 64 1 50 1 9 400 1190 234 1N4731A 4.3 58 1 10 1 9 400 1070 217 1N4732A 4.7 53 1 10 1 8 500 970 193 1N4733A 5.1 49 1 10 1 7 550 890 178 1N4734A 5.6 45 1 10 2 5 600 810 162 1N4735A 6.2 41 1 10 3 2 700 730 146 1N4736A 6.8 37 1 10 4 3.5 700 660 133 1N4737A 7.5 34 0.5 10 5 4 700 605 121 1N4738A 8.2 31 0.5 10 6 4.5 700 550 110 1N4739A 9.1 28 0.5 10 7 5 700 500 100 1N4740A 10 25 0.25 10 7.6 7 700 454 91 1N4741A 11 23 0.25 5 8.4 8 700 414 83 1N4742A 12 21 0.25 5 9.1 9 700 380 76 1N4743A 13 19 0.25 5 9.9 10 700 344 69 1N4744A 15 17 0.25 5 11.4 14 700 304 61 1N4745A 16 15.5 0.25 5 12.2 16 700 285 57 1N4746A 18 14 0.25 5 13.7 20 750 250 50 1N4747A 20 12.5 0.25 5 15.2 22 750 225 45 1N4748A 22 11.5 0.25 5 16.7 23 750 205 41 1N4749A 24 10.5 0.25 5 18.2 25 750 190 38 1N4750A 27 9.5 0.25 5 20.6 35 750 170 34 1N4751A 30 8.5 0.25 5 22.8 40 1000 150 30 1N4752A 33 7.5 0.25 5 25.1 45 1000 135 27 1N4753A 36 7 0.25 5 27.4 50 1000 125 25 1N4754A 39 6.5 0.25 5 29.7 60 1000 115 23 1N4755A 43 6 0.25 5 32.7 70 1500 110 22 1N4756A 47 5.5 0.25 5 35.8 80 1500 95 19 1N4757A 51 5 0.25 5 38.8 95 1500 90 18 1N4758A 56 4.5 0.25 5 42.6 110 2000 80 16 1N4759A 62 4 0.25 5 47.1 125 2000 70 14 1N4760A 68 3.7 0.25 5 51.7 150 2000 65 13 1N4761A 75 3.3 0.25 5 56 175 2000 60 12 1N4762A 82 3 0.25 5 62.2 200 3000 55 11 1N4763A 91 2.8 0.25 5 69.2 250 3000 50 10 1N4764A 100 2.5 0.25 5 76 350 3000 45 9 Notes (1) Based on DC measurement at thermal equilibrium while maintaining the lead temperature (T ) at 30 °C + 1 °C, 9.5 mm (3/8") from the L diode body (2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature (3) t = 10 ms. p Rev. 2.3. 13-Nov-12 Document Number: 85816 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4728A to 1N4764A www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ptot - Power Dissipation (mW) 1400 1200 1000 800 600 400 200 0 0 22671 50 100 150 200 Tamb- Ambient Temperature (°C) Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Ptot = f (Tamb) PACKAGE DIMENSIONS in millimeters (inches): DO-41_1N47xx 4.1 max. [0.161] 3.3 min. [0.128] 26 min. [1.024] Ø 2.1 min. [0.081] 26 min. [1.024] Ø 2.6 max. [0.102] Ø 0.86 max. [0.034] Ø 0.7 min. [0.027] Cathode Identification Document no. S8-V-3901.04-001(4) Rev. 1 - Date: 30. Nov. 2011 22624 Rev. 2.3. 13-Nov-12 Document Number: 85816 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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