IRF IRF7343TRPBF

PD - 92547
IRF7343PbF
l
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
P-CHANNEL MOSFET
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
VDSS
N-Ch
P-Ch
55V
-55V
RDS(on) 0.050Ω 0.105Ω
SO-8
Absolute Maximum Ratings
Parameter
V DS
ID @ TA = 25°C
I D @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ, TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation …
Maximum Power Dissipation …
Single Pulse Avalanche Energyƒ
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
55
4.7
3.8
38
P-Channel
-55
-3.4
-2.7
-27
2.0
1.3
72
4.7
114
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient …
Typ.
Max.
Units
–––
62.5
°C/W
1
10/7/04
IRF7343PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
55
-55
—
—
—
—
—
—
1.0
-1.0
7.9
3.3
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
—
—
—
—
0.059 —
0.054 —
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
—
—
—
—
—
—
—
—
— 2.0
— -2.0
—
25
— -25
— ±100
24
36
26
38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
14
22
3.2 4.8
10
15
32
48
43
64
13
20
22
32
740 —
690 —
190 —
210 —
71
—
86
—
Min.
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
0.70
-0.80
60
54
120
85
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A „
VGS = 4.5V, ID = 3.8A „
VGS = -10V, ID = -3.4A „
VGS = -4.5V, ID = -2.7A „
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 10V, I D = 4.5A „
VDS = -10V, I D = -3.1A
„
VDS = 55V, V GS = 0V
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, T J = 55°C
VDS = -55V, V GS = 0V, TJ = 55°C
VGS = ±20V
N-Channel
I D = 4.5A, VDS = 44V, VGS = 10V
P-Channel
I D = -3.1A, V DS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 16Ω
„
„
N-Channel
V GS = 0V, V DS = 25V, ƒ = 1.0MHz
P-Channel
V GS = 0V, V DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Max. Units
Conditions
2.0
-2.0
A
38
-27
1.2
TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
V
-1.2
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
90
N-Channel
ns
80
TJ = 25°C, I F =2.0A, di/dt = 100A/µs
170 nC
P-Channel
„
TJ = 25°C, I F = -2.0A, di/dt = 100A/µs
130
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
‚ N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
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IRF7343PbF
N-Channel
100
100
VGS
15V
12V
10V
8.0V
4.5V
6.0V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
10
3.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
1
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
V DS = 25V
20µs PULSE WIDTH
3
4
5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
VGS = 0 V
0.5
0.8
1.1
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7343PbF
ID = 4.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
R DS (on), Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
N-Channel
0.120
0.100
0.080
VGS = 4.5V
0.060
VGS = 10V
0.040
TJ , Junction Temperature ( °C)
20
30
200
0.08
I D = 4.7A
0.04
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
10
A
EAS , Single Pulse Avalanche Energy (mJ)
0.10
0.06
40
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
RDS(on) , Drain-to-Source On Resistance ( Ω )
10
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
4
0
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
120
80
40
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7343PbF
N-Channel
1200
VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
400
Coss
200
ID = 4.5A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
1
10
0
100
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7343PbF
100
P-Channel
100
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-3.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-3.0V
1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
100
100
-ISD , Reverse Drain Current (A)
Fig 13. Typical Output Characteristics
-I D , Drain-to-Source Current (A)
Fig 12. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
1
V DS = -25V
20µs PULSE WIDTH
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
6
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
TOP
7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
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IRF7343PbF
P-Channel
ID = -3.4 A
R DS (on) , Drain-to-Source On Resistance(Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
TJ , Junction Temperature ( °C)
0.35
0.25
I D = -3.4 A
0.15
0.05
8
11
-V GS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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14
A
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.45
5
6
8
10
12
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 16. Normalized On-Resistance
Vs. Temperature
2
4
-ID , Drain Current (A)
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
7
IRF7343PbF
1200
20
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
960
C, Capacitance (pF)
P-Channel
Ciss
720
480
Coss
240
Crss
0
1
10
--VDS , Drain-to-Source Voltage (V)
VDS =-48V
VDS =-30V
VDS =-12V
16
12
8
4
0
100
ID = -3.1A
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7343PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
INCHES
MIN
.0532
A
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
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9
IRF7343PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
10
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