IRF IRF9952QPBF_10

PD - 96115A
IRF9952QPbF
l
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
N-CHANNEL MOSFET
1
8
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
N-Ch P-Ch
D1
VDSS
P-CHANNEL MOSFET
30V
-30V
RDS(on) 0.10Ω 0.25Ω
Top View
Description
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
SO-8
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
VDS
V GS
ID
IDM
IS
Maximum
P-Channel
N-Channel
30
± 20
EAS
IAR
EAR
dv/dt
TJ, TSTG
V
3.5
2.8
16
1.7
-2.3
-1.8
-10
-1.3
2.0
1.3
PD
Units
A
W
44
2.0
57
-1.3
0.25
5.0
-5.0
-55 to + 150
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
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Symbol
Limit
Units
RθJA
62.5
°C/W
1
08/09/10
IRF9952QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.015 —
0.015 —
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
—
—
—
—
12
—
2.4 —
— 2.0
— -2.0
—
25
— -25
— ±100
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
6.2 12
9.7 19
8.8 18
14
28
13
26
20
40
3.0 6.0
6.9 14
190 —
190 —
120 —
110 —
61
—
54
—
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.2A „
VGS = 4.5V, ID = 1.0A „
VGS = -10V, ID = -1.0A „
VGS = -4.5V, ID = -0.50A „
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 3.5A „
VDS = -15V, I D = -2.3A
„
VDS = 24V, VGS = 0V
VDS = -24V, V GS = 0V
VDS = 24V, V GS = 0V, TJ = 125°C
VDS = -24V, V GS = 0V, TJ = 125°C
VGS = ±20V
N-Channel
I D = 1.8A, VDS = 10V, VGS = 10V
P-Channel
I D = -2.3A, V DS = -10V, VGS = -10V
N-Channel
VDD = 10V, ID = 1.0A, R G = 6.0Ω,
RD = 10Ω
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
RD = 10Ω
„
„
N-Channel
V GS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
V GS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.7
—
— -1.3
A
—
—
16
—
—
16
— 0.82 1.2
TJ = 25°C, IS = 1.25A, VGS = 0V ƒ
V
— -0.82 -1.2
TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
—
27
53
N-Channel
ns
—
27
54
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
—
28
57
P-Channel
„
nC
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
—
31
62
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 23 )
… Surface mounted on FR-4 board, t ≤ 10sec.
‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH R G = 25Ω, IAS = -1.3A.
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2
IRF9952QPbF
N-Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
100
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
TJ = 25°C
10
TJ = 150°C
V DS = 10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
6.0
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
A
1.4
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF9952QPbF
ID = 2.2A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.12
0.10
0.08
0
TJ , Junction Temperature ( °C)
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.14
0.12
0.10
I D = 3.5A
0.06
0.04
0.02
0.00
6
9
12
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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4
6
8
10
12
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
3
2
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
0
VGS = 10V
0.06
0.04
80 100 120 140 160
0.08
VGS = 4.5V
15
A
100
TOP
BOTTOM
80
ID
0.89A
1.6A
2.0A
60
40
20
A
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
4
IRF9952QPbF
N-Channel
350
250
Ciss
200
Coss
VGS , Gate-to-Source Voltage (V)
300
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
150
Crss
100
50
0
1
10
100
A
ID = 1.8A
VDS = 10V
16
12
8
4
0
0
2
4
6
8
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF9952QPbF
100
P-Channel
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
10
1
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
0.1
10
0.1
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
10
Fig 13. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
10
TJ = 25°C
T J = 150°C
1
VDS = -10V
20µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
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A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain
Diode
Forward Voltage
A
1.4
6
IRF9952QPbF
P-Channel
ID = -1.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
2.5
RDS(on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
2.0
1.5
VGS = -4.5V
1.0
0.5
VGS = -10V
0.0
80 100 120 140 160
0.0
TJ , Junction Temperature ( °C)
2.0
3.0
150
I D = -2.3A
0.20
0.00
3
6
9
12
-V GS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.60
0
5.0
A
Fig 17. Typical On-Resistance Vs. Drain
Current
0.80
0.40
4.0
-I D , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
1.0
ID
-0.58A
-1.0A
BOTTOM -1.3A
TOP
120
90
60
30
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
7
IRF9952QPbF
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
400
P-Channel
300
Ciss
Coss
200
Crss
100
0
1
10
100
A
ID = -2.3A
VDS =-10V
16
12
8
4
0
0
2
4
6
8
10
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance
Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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8
IRF9952QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
A1
8X b
0.25 [.010]
A
MILLIMETERS
MIN
A
E
INCHES
DIM
B
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E XAMPLE : T HIS IS AN IR F 7101 (MOS F ET )
INT E R NAT IONAL
R E CT IF IE R
L OGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S LE AD-F R EE
PRODU CT (OPT IONAL )
Y = L AS T DIGIT OF T HE YE AR
WW = WE EK
A = AS S E MB L Y S IT E CODE
L OT CODE
PART NU MB E R
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF9952QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
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10