S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications Unit: mm · FWD included between cathode and anode · Critical rate of rise of ON-state current: di/dt = 750 A/µs · Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) · Repetitive peak OFF-state voltage: VDRM = 800 V · Gate trigger current: IGT = 30 mA max. Maximum Ratings Characteristics Symbol Rating Unit Repetitive peak OFF-state voltage VDRM 800 V Repetitive peak surge ON-state current (Note) ITRM 500 A IFRM 500 A di/dt 750 A/ms PGM 5 PG (AV) Peak forward gate voltage Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current JEDEC ― W JEITA ― 0.5 W TOSHIBA VFGM 10 V Weight: 1.5 g (typ.) Peak reverse gate voltage VRGM -5 V Peak forward gate current IGM 2 A Tj -40~125 °C Tstg -40~150 °C (Note) Peak gate power dissipation Average gate power dissipation Junction temperature Storage temperature range 13-10J1B Note: VD < = 0.8 ´ rated, Tc = 85°C, igp > = 60 mA, tgw > = 10 ms, tgr < = 150 ns Marking ※1 ※1 ※2 ※2 MARK S6A13 TYPE NAME S6A13 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year) 1 2002-01-23 S6A13 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Repetitive peak OFF-state current IDRM VDRM = Rated ¾ ¾ 10 mA Peak ON-state voltage (thyristor) VTM ITM = 25 A ¾ ¾ 1.5 V Peak forward voltage (diode) VFM IFM = 25 A ¾ ¾ 2.0 V Gate trigger voltage VGT ¾ ¾ 1.0 V Gate trigger current IGT ¾ ¾ 30 mA Gate non-trigger voltage VGD 0.2 ¾ ¾ V Critical rate of rise of OFF-state voltage dv/dt ¾ 50 ¾ V/ms VD = 6 V, ITM = 1 A ¾ ¾ 35 mA DC ¾ ¾ 70 °C/W Holding current IH Thermal resistance (junction to ambient) Rth (j-a) VD = 6 V, RL = 10 W VD = Rated, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise Test Circuit Examples VD IP C 0.5 IP L S6A13 R t tw = p LC , IP = tw = 2 ms VD L/C di/dt = 0.5 IP t Equivalent Circuit ANODE GATE CATHODE 2 2002-01-23 S6A13 IGT (Tc)/IGT (Tc = 25°C) – Tc VGT (Tc)/VGT (Tc = 25°C) – Tc (typical) 2.5 (typical) 2.0 VD = 6 V RL = 10 W VD = 6 V RL = 10 W VGT (Tc)/VGT (Tc = 25°C) IGT (Tc)/IGT (Tc = 25°C) 2.0 1.5 1.0 0.5 0.0 -60 -20 20 60 100 1.5 1.0 0.5 0.0 -60 140 -20 60 Pulse trigger characteristics (typical) 2.5 (typical) Resistance load 2.0 VD = 6 V RL = 10 W 4 Tc = 25°C Rectangular waveform 1.5 iGT(tw)/IGT IH (Tc)/IH (Tc = 25°C) 140 5 VD = 6 V ITM = 1 A 1.0 0.5 0.0 -60 3 iGT tw 2 1 -20 20 60 100 0 0.1 140 Case temperature Tc (°C) 1 10 Gate trigger pulse width iT – vT (thyristor) tw 100 (ms) iF – vF (diode) 1000 Instantaneous forward current iF iT (A) (A) 1000 Instantaneous ON-state current 100 Case temperature Tc (°C) Case temperature Tc (°C) IH (Tc)/IH (Tc = 25°C) – Tc 20 100 10 Tj = 125°C 1 0.0 0.5 1.0 25°C 1.5 2.0 Instantaneous ON-state voltage 2.5 100 10 Tj = 125°C 1 0.0 3.0 vT (V) 1.0 25°C 2.0 3.0 4.0 Instantaneous forward voltage 3 5.0 vF 6.0 (V) 2002-01-23 S6A13 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-01-23