TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE JDV4P08U Unit in ｍｍ ○ VCO FOR UHF BAND RADIO 2.1 ±0.1 1.25 ±0.1 ● Small Package ３ ＋0.1 0.2−0.05 1.3±0.1 ２ 0.15±0. 05 RATING UNIT 10 V 125 ℃ −55 ∼ 125 ℃ ４ 0~0.1 SYMBOL VR Tj Tstg １ 0.7 MAXIMUM RATINGS(Ta = 25℃) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ＋0.05 0.95−0.15 2.0±0.2 ● Ultra Low Series Resistance : rs = 0.30Ω (Typ.) １．ＡＮＯＤＥ １ ２．ＡＮＯＤＥ ２ ３．ＣＡＴＨＯＤＥ ２ ４．ＣＡＴＨＯＤＥ １ ＵＳＱ JEDEC EIAJ TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage VR IR = 1 μA Reverse Current IR VR = 10 V Capacitance C1V VR = 1 V ， f = 1 MHz Capacitance C4V VR = 4 V ， f = 1 MHz Capacitance Ratio C1V／ C4V − Series Resistance rs VR = 1 V ， f = 470 MHz Marking ４ ・ １ ３ ＴＶ ２ MIN. 10 − 17.3 5.3 2.8 − 1-2U1A TYP. − − 18.3 6.1 3.0 0.3 MAX. − 3 19.3 6.6 − 0.5 UNIT V nA pF pF − Ω