Variable Capacitance Diodes MA2S304 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 • Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.8 ± 0.1 ■ Features 0.27 − 0.02 + 0.05 0.27 − 0.02 0.15 min. 1.3 ± 0.1 1.7 ± 0.1 Rating Unit Reverse voltage (DC) VR 30 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.05 0 to 0.1 Symbol 0.7 ± 0.1 Parameter 0.13 − 0.02 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: K ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR Conditions VR = 28 V Diode capacitance CD(1V) VR = 1 V, f = 1 MHz CD(4V) VR = 4 V, f = 1 MHz Capacitance ratio CD(1V)/CD(4V) Series resistance* rD Min Typ Max Unit 10 nA 24.8 29.8 pF 6.0 8.3 pF 3.0 VR = 4 V, f = 100 MHz 1.0 Ω Note) 1．Rated input/output frequency: 100 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2S304 Variable Capacitance Diodes CD VR 100 f = 1 MHz Ta = 25°C 20 10 5 3 − 40°C 60 40 0 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) IR T a 100 Reverse current IR (nA) Ta = 60°C 80 VR = 28 V 10 1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) f = 1 MHz VR = 4 V 1V 1.03 1.02 1.01 1.00 20 2 2 25°C CD(Ta) CD(Ta = 25°C) 30 0.01 1.04 100 Forward current IF (mA) Diode capacitance CD (pF) 50 1 CD Ta IF V F 120 0.99 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 100