Variable Capacitance Diodes MA2Z377 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 2.5 ± 0.2 Unit VR 12 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 Reverse voltage (DC) 0.16 − 0.06 Rating 0.9 ± 0.1 Symbol 0 to 0.05 Parameter 2 + 0.1 1 • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.3 − 0.05 ■ Features 0.4 ± 0.15 1.25 ± 0.1 For VCO of a UHF band radio 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7D ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR Conditions CD(2V) VR = 2 V, f = 1 MHz CD(10V) VR = 10 V, f = 1 MHz Capacitance ratio CD(2V)/CD(10V) Series rD Typ VR = 12 V Diode capacitance resistance* Min VR = 1 V, f = 470 MHz Max Unit 10 nA 3.40 pF 1.10 1.50 pF 2.20 2.80 0.60 Ω 2.80 0.40 Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2Z377 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 5 3 2 1 0.5 0.3 0 2 4 6 8 10 12 14 16 18 20 IR Ta Reverse current IR (nA) 100 10 1 0.1 0 40 80 120 160 Ambient temperature Ta (°C) 2 100 1.02 VR = 1 V 2V 4V 1.01 10 V 80 Ta = 60°C − 40°C 25°C 60 40 0 200 f = 1 MHz 1.00 0.99 0.98 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Reverse voltage VR (V) 0.01 1.03 20 0.2 0.1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 10 1.2 0.97 0 20 40 60 80 Ambient temperature Ta (°C) 100