S3A thru S3M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 μA VF 1.15 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S3A S3B S3D S3G S3J S3K S3M SA SB SD SG SJ SK SM UNIT Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL = 103 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Revision: 11-Dec-12 V Document Number: 88713 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S3A thru S3M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 2.5 A S3A S3B S3D VF TA = 25 °C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 125 °C S3G S3J S3K S3M 1.15 V 10 IR UNIT μA 250 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 μs Typical junction capacitance 4.0 V, 1 MHz CJ 60 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance (1) S3A S3B S3D S3G RJA 47 RJL 13 S3J S3K S3M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S3J-E3/57T 0.211 57T 850 7" diameter plastic tape and reel PREFERRED P/N S3J-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel S3JHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel (1) 0.211 9AT 3500 13" diameter plastic tape and reel S3JHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel S3JHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel S3JHE3/9AT Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 3.5 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 3.0 2.5 2.0 1.5 1.0 P.C.B. Mounted on 0.3" x 0.3" (8.0 mm x 8.0 mm) Copper Pad Areas 0.5 TL = 75 °C 8.3 ms Single Half Sine-Wave 100 10 0 50 70 90 110 130 150 170 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 11-Dec-12 Document Number: 88713 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S3A thru S3M www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 1 0.1 0.01 0.6 10 0.8 0.7 0.9 1.1 1.0 1.2 1 1.3 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (µA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0 20 40 60 80 10 1 Mounted on 0.20" x 0.27" (5 mm x 7 mm) Copper Pad Areas 0.1 0.01 100 0.1 10 1 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 11-Dec-12 Document Number: 88713 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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