AS1PD, AS1PG, AS1PJ, AS1PK, AS1PM www.vishay.com Vishay General Semiconductor Standard Avalanche Surface Mount Rectifiers FEATURES • Very low profile - typical height of 1.0 mm ® eSMP Series Available • Ideal for automated placement • Controlled avalanche characteristics • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified DO-220AA (SMP) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A IR 0.3 μA VF at IF = 1.5 A 0.89 V EAS 20 mJ TJ max. 175 °C Package DO-220AA (SMP) Diode variations Single die MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS Polarity: Color band denotes cathode end For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code AS1PD AS1PG AS1PJ AS1PK AS1PM ASD ASG ASJ ASK ASM 200 400 600 800 1000 UNIT Max. repetitive peak reverse voltage VRRM Max. DC forward current (see fig. 1) IF (1) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range V Note (1) Mounted on 5 mm x 5 mm pad areas PCB Revision: 14-Aug-13 Document Number: 89290 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS1PD, AS1PG, AS1PJ, AS1PK, AS1PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C IF = 1.0 A TA = 125 °C Instantaneous forward voltage MAX. 0.95 - 0.84 - 0.99 1.15 TA = 125 °C 0.89 1.0 TA = 25 °C 0.3 5 35 100 VF (1) TA = 25 °C IF = 1.5 A TYP. IR (2) UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.5 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 10.4 - pF TA = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance AS1PD AS1PG AS1PJ (1) AS1PK AS1PM 115 RJM (1) UNIT °C/W 15 Note (1) Unit mounted on PCB with 5 mm x 5 mm copper pad areas. Thermal resistance R JA - junction to ambient, RJM - junction to mount at the terminal of cathode band ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.024 84A 3000 7" diameter plastic tape and reel 0.024 85A 10 000 13" diameter plastic tape and reel AS1PJ-M3/84A AS1PJ-M3/85A (1) 0.024 84A 3000 7" diameter plastic tape and reel AS1PJHM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel AS1PJHM3/84A Note (1) Automotive grade 1.6 1.8 1.4 1.6 D = 0.5 D = 0.8 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.2 1.0 0.8 0.6 Resistive or Inductive Load 0.4 TM Measured at the Cathode Band Terminal 0.2 D = 0.3 1.4 D = 0.2 1.2 D = 1.0 D = 0.1 1.0 0.8 T 0.6 0.4 D = tp/T 0.2 0 tp 0 95 105 115 125 135 145 155 165 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 14-Aug-13 Document Number: 89290 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS1PD, AS1PG, AS1PJ, AS1PK, AS1PM www.vishay.com Vishay General Semiconductor 100 TA = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TA = 125 °C 1 TA = 75 °C TA = 25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 10 1 0.1 0.1 0.5 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1.4 1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (μA) 10 Reverse Voltage (V) TA = 175 °C 100 TA = 125 °C 10 TA = 75 °C 1 TA = 25 °C 0.1 20 30 40 50 60 70 80 90 10 1 0.01 0.01 10 100 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) Revision: 14-Aug-13 0.025 0.030 (0.635) (0.762) 0.100 (2.54) 0.050 (1.27) Document Number: 89290 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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