TA8496FL Toshiba Bipolar Linear Integrated Circuit Silicon Monolithic TA8496FL Magnetic Head R/W IC This IC enables writing and detection of magnetic recording signals. Features • Operating voltage range: VCC = 3.5 to 7 V • Output current: Iout = 20 mA (max) • Constant current operating function VBAT = 1.8 to 7 V : IOC = (0.25 (V) × 160 (A))/RWR (typ.) Weight: 0.05 g (typ.) Block Diagram 9 CFIL 10 19 T1 FCNT AOUT2 AIN3 17 16 12 15 14 18 10 kΩ Filter AIN2 100 kΩ 100 Ω COMIN 8 VCC − VF − 0.3 V 316 kΩ 10 kΩ 40 dB 30 kΩ 30 kΩ VREF 24 100 kΩ 10 kΩ HDFB HDOUT 10 kΩ VCC 20 dB 20 dB 30 dB 13 AOUT3 AMP2 HEAD-AMP AMP3 21 AHDIN 20 ACOM COM-AMP 2 VBAT ON/OFF 7 Control circuit R/W 6 22 HDIN ENA 5 23 COM H-SW control circuit CLK 4 3 WRCNT 1 WRGND 11 RDGND 1 2003-10-07 TA8496FL Pin Function Pin Number Symbol 1 WRGND 2 VBAT 3 WRCNT Description GND for write block High-switch control power supply Write output setting pin 4 CLK High-switch operation control signal input 5 ENA High-switch enable signal input 6 R/W Read/write select signal input 7 ON/OFF Chip enable signal input 8 COMIN Internal reference voltage setting (fine adjustment) 9 VCC Power supply input pin 10 CFIL Power supply filter connecting pin (C = 0.1 µF) 11 RDGND 12 FCNT 13 AOUT3 14 AIN3 15 AOUT2 Amp 2 output 16 T1 Amp 2 test pin 17 AIN2 18 HDOUT 19 HDFB Head amp feedback input 20 ACOM COM amp output 21 AHDIN Head amp output 22 HDIN Write output 23 COM Write output 24 Vref GND for read block Cut-off frequency setting pin Amp 3 output Amp 3 input Amp 2 input Head amp output VCC filter output (internal power supply) Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit VCC 8 V VBAT 8 V VI 6 V Output Current IOUT 20 mA Operating Temperature Topr −20 to 70 °C Storage Temperature Tstg −50 to 150 °C Symbol Rating Unit VCC 3.5 to 7.0 VBAT 1.8 to 7.0 Power Supply Voltage Input Voltage Recommended Operating Conditions Characteristics Power Supply Voltage 2 V 2003-10-07 TA8496FL Functions Input ON/OFF Read Unit R/W ENA CLK COM HDin H H/L H/L ∞ ∞ Enable L H H L H Disable L H L H L Disable L L L L L Disable L L H ∞ ∞ Disable H/L H/L H/L ∞ ∞ Disable H L Write Unit ∞: High impedance Electrical Characteristics Interface Block (unless otherwise is specified, VCC = 5 V, VBAT = 3 V, Ta = 25°°C) Characteristics Input Voltage Input Current Symbol Test Circuit VIN1-Hi VIN1-Lo Min Typ. Max ENA, ON/OFF 2.5 VCC ENA, ON/OFF 1.0 VIN2-Hi CLK, R/W 1.5 VCC VIN2-Lo CLK, R/W 0.5 IIN1-Hi CLK, VIN = 5 V ― 15 25 IIN1-Lo CLK, VIN = 0 V −85 −120 ENA, VIN = 5 V 85 120 IIN3-Hi R/W, VIN = 5 V 15 25 IIN3-Lo R/W, VIN = 0 V −85 −120 IIN4-Hi ON/OFF, VIN = 5 V 85 120 IIN2-Hi 1 Test Condition 3 Unit V µA 2003-10-07 TA8496FL Read Block (unless otherwise is specified, VCC = 5 V, VBAT = 3 V, Ta = 25°°C) Characteristics Test Circuit Symbol ICCR 2 ICCO Head amp GH Amp 2 G2 Amp 3 G3 ― Output Offset Voltage Amp 3 Output Voltage Range Amp 3 Output Current VACOM Head amp VHOS Amp 2 V2OS Amp 3 V3OS Low V3OL High V3OH Output I3OUT Input Max Unit 3.2 4.6 mA 0 1 µA 40 40 30 Rg = 0 Ω, fc = 19 kHz 0.33 (0.64)* Rg = 0 Ω, fc = 1.7 kHz 0.15 (0.26)* When chip disabled 3 En2 Reference Voltage Typ. (on/off = low or open) En1 Head Amp Input Conversion Noise Min When read block in operation Current Dissipation Gain Characteristics Test Condition 3 2.0 2.1 −0.1 ±0.25 +0.7 ±1.1 +0.1 ±0.25 0.2 4.1 2.0 0.1 0.2 0.3 3 4 1.9 RL = 10 kΩ 4 I3IN dB µVrms V V V mA *: Guaranteed by design. Determined at design and does not change at manufacturing. Test not conducted. Write Block (unless otherwise is specified, VCC = 5 V, VBAT = 3 V, Ta = 25°°C) Characteristics Symbol Test Circuit Test Condition 3.7 5.2 ICCe When write enabled 1.9 2.8 ICCB When write in break 4.4 6.1 1.4 1.8 Ibat 2 (RWR = 5 kΩ) IbaB When write in break 1.0 1.6 Ibar During read 0 1 0 1 When chip disabled IOC (on/off = low or open) 5 ENA Output Transfer Time IOC = 10 mA VBAT = 2.0 V 8 10 12 (at VBAT = 2.0 V) VBAT = 5.0 V 11 13 0.1 0 to 90% (Note1) 0.5 TpHL1 0 to 10% (Note1) 0.1 TpHL2 0 to 90% (Note1) 0.5 TpZH1 0 to 10% (Note1) 0.3 6 0 to 90% (Note1) 0.5 TpHZ1 0 to 10% (Note1) 0.3 TpHZ2 0 to 90% (Note1) 0.5 TpZH2 6 mA mA (Note1) TpLH2 Unit µA 0 to 10% TpLH1 CLK Output Transfer Time Max During write, CLK = Low/High Ibao Set Output Current Typ. ICCw During write, reactive current Current Dissipation Min µs µs Note 1: Load RL = 36 Ω, CL = 10 pF 4 2003-10-07 TA8496FL Input/Output Circuit • CLK pin VREF 1 kΩ 50 kΩ R/W 6 GND GND • ON/OFF pin VREF AOUT3 pin VCC 13 AOUT3 50 kΩ 200 µA 50 kΩ GND Secondly L.P.F characteristics (amp 2) 30 Cut-off frequency (kHz) (−3 dB) GND 1.0 V 1.0 V GND ON/OFF 7 1 kΩ ENA 5 50 kΩ CLK 4 • R/W pin VREF 50 kΩ VREF • ENA pin 50 kΩ • 10 3 1 0.3 0.1 1 3 10 30 100 Control resistance (kΩ) (FCNT) 5 2003-10-07 TA8496FL Test Circuit 5V IIN4 4 CLK A 5 ENA 10 kΩ 2 19 18 17 VBAT HDFB HDOUT AIN2 12 15 14 FCNT AOUT2 AIN3 ACOM 20 AHDIN 21 TA8496FL A 6 R/W A 7 ON/OFF HDIN 22 COM 23 RDGND CFIL 11 10 RL = 120 Ω IIN3 A 0.1 µF WRCNT WRGND 3 1 RWR = 5 kΩ IIN2 9 VCC 0.1 µF IIN1 820 pF 0.1 µF 3V 5V 1. Input Current (IIN1, IIN2, IIN3, IIN4) 6 2003-10-07 TA8496FL 2. Current Consumption (ICCR, ICCO, ICCW, ICCe, ICCB, Ibat, IbaB, Ibar, Ibao) 3V 5V 9 VCC A 0.1 µF 10 kΩ 820 pF 0.1 µF A 2 19 18 17 VBAT HDFB HDOUT AIN2 12 15 14 FCNT AOUT2 AIN3 ACOM 20 5V 4 CLK AHDIN 21 TA8496FL SW. 6 R/W HDIN 22 7 ON/OFF COM 23 WRCNT WRGND 3 1 0.1 µF RWR = 3.9 kΩ RDGND CFIL 11 10 RL = 120 Ω 5 ENA Input Sequence (H = 5 V, L = 0 V) Current Consumption (VCC, VBAT) ON/OFF R/W ENA CLK ICCR H H L H ICCO L/OPEN H H/L H ICCW H L H H/L ICCe H L L H ICCB H L L L Ibat (Note2) H L H H/L IbaB H L L L Ibar H H H/L H/L Ibao L/OPEN H/L H/L H/L Note 2: SW. OFF 7 2003-10-07 TA8496FL 9 VCC V 10 kΩ SW. 2 19 18 17 VBAT HDFB HDOUT AIN2 VAOUT2 VIN3 VHDOUT VIN2 V 820 pF 3V 5V 3. Gain Characteristics (GH, G2, G3), Power Off-Set Voltage (VHOS, V2OS, V3OS) SW. 12 15 14 FCNT AOUT2 AIN3 6 R/W AOUT3 13 V VAOUT3 SW. TA8496FL AHDIN 21 5V 7 ON/OFF WRCNT WRGND 3 1 RWR = 5 kΩ 0.1 µF VHDOUT , G2 = 20 log VHDIN V VAOUT2 , G3 = 20 log VIN2 VACOM ACOM 20 RDGND CFIL 11 10 GH = 20 log VHDIN VAOUT3 VIN3 When off-set voltage is measured, SW turns ON. VHOS = |VHDOUT|, V2OS = |VAOUT2|, V3OS = |VAOUT3| 4. Amp 3 Output Voltage Range (V3OL, V3OH), Amp 3 Output Current (I3OUT, I3IN) 100 µA V I3IN VIO 7 ON/OFF 5V TA8496FL V V V30H AOUT3 13 A (Note3) 10 kΩ 6 R/W 12 15 14 FCNT AOUT2 AIN3 V30L 2 19 18 17 VBAT HDFB HDOUT AIN2 0.1 µF 2 mA 9 VCC 10 kΩ 820 pF 0.1 µF 3V 5V VCC AHDIN 21 ACOM 20 WRGND 1 0.1 µF RDGND CFIL 11 10 Note 3: I3OUT must be measured on condition in VIO > = 4.0 V 8 2003-10-07 TA8496FL 5V 2 V/5 V Set Output Current (IOC) 9 VCC 2 VBAT 4 CLK HDIN 22 5 ENA TA8496FL 6 R/W A IOC RL = 120 Ω 5V COM 23 7 ON/OFF RDGND 11 WRCNT WRGND 3 1 RWR 5. Set RWR so that IOC = 10 mA (at VBAT = 2 V). At this time, due to fluctuation in samples, IOC fluctuates in the range of 8 to 12 mA. Also, IOC fluctuates depending on the power supply (VBAT) as follows: IOC = 10 mA (at VBAT = 2 V) → IOC ∼ − 13 mA (at VBAT = 5 V). 9 2003-10-07 TA8496FL CLK, ENA Output Propagation Time (TpLH1/2, TpHL1/2, TpZH1/2, TpHZ1/2) 9 VCC 0.1 µF 10 kΩ 820 pF 0.1 µF 3V 5V 6. 2 19 18 17 VBAT HDFB HDOUT AIN2 12 15 14 FCNT AOUT2 AIN3 4 CLK ACOM 20 5 ENA AHDIN 21 Current probe HDIN 22 7 ON/OFF COM 23 RDGND CFIL 11 10 CL = 10 pF WRCNT WRGND 3 1 RWR 0.1 µF 5V 6 R/W RL = 36 Ω TA8496FL RWR: IOC is set 10 mA. CLK Input Voltage Waveform Output Current Waveform 50% 50% 90% 10% 90% 10% TpLH1 TpLH2 ENA Input Voltage Waveform +10 mA GND −10 mA TpHL1 TpHL2 50% 50% TpZH2 TpHZ2 TpHZ1 90% TpZH1 90% 10% 90% 10% 90% 10% GND 10% TpHZ1 TpHZ2 +10 mA −10 mA TpZH1 TpZH2 10 2003-10-07 TA8496FL 100 kΩ COMIN 24 VCC − VF − 0.3 V 30 kΩ 100 Ω VREF 100 kΩ 316 kΩ 10 kΩ 40 dB 20 dB AD 20 dB 30 dB 13 AMP2 HEAD-AMP 8 AMP3 21 20 COM-AMP 2 ON/OFF CPU R/W ENA AHDIN ACOM VBAT 7 Control block 6 22 23 5 High-switch control block 4 0.25 V (typ.) CLK AOUT3 3 1 WRCNT WRGND 1.8 to 7.0 V 10 kΩ Filter 10 kΩ 10 0.1 µF HDFB HDOUT AIN2 T1 FCNT AOUT2 AIN3 19 18 17 16 12 15 14 VCC 9 10 kΩ CFIL 820 pF 0.1 µF 30 kΩ 0.1 µF 3.5 to 7.0 V Example of Application Circuit HDIN COM HEAD 11 RDGND Note 4: Operating supply voltage range VCC = 3.5 to 7.0 V, VBAT = 1.8 to 7.0 V However, set VCC so that VACOM ≤ VBAT + 0.5 V. VCC ≥ VBAT. (VACOM = (VCC − VF − 0.3)/2) By connecting a resistor to the COMIN pin, VACOM can be varied. Note 5: The IC may be damaged by shorts between pins, to the power supply, or to ground. Take great care when designing lines. 11 2003-10-07 TA8496FL Requests Concerning Use of QON Outline Drawing of Package (Upper surface) (Lower surface) When using QON, please take into account the following items. Caution (1) (2) Do not carry out soldering on the island section in the four corners of the package (the section shown on the lower surface drawing with diagonal lines) with the aim of increasing mechanical strength. The island section exposed on the package surface (the section shown on the upper surface drawing with diagonal lines) must be used as (Note 6) below while electrically insulated from outside. Note 6: Ensure that the island section (the section shown on the lower surface drawing with diagonal lines) does not come into contact with solder from through-holes on the board layout. • When mounting or soldering, take care to ensure that neither static electricity nor electrical overstress is applied to the IC (measures to prevent anti-static, leaks, etc.). • When incorporating into a set, adopt a set design that does not apply voltage directly to the island section. 12 2003-10-07 TA8496FL Package Dimensions Weight: 0.05 g (typ.) 13 2003-10-07 TA8496FL RESTRICTIONS ON PRODUCT USE 030619EBA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 14 2003-10-07