SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applications Unit: mm · Repetitive peak off-state voltage: VDRM = 400, 600 V · Average on-state current: IT (AV) = 5 A · Gate trigger current: IGT = 70 µA max Repetitive peak reverse voltage: VRRM = 400, 600 V Maximum Ratings Characteristics Symbol Repetitive peak off-state voltage and Repetitive peak reverse voltage (RGK = 330 W) SF5G49 USF5G49 Non-repetitive peak reverse voltage (non-repetitive < 5 ms, Tj = 0~125°C, RGK = 330 W) SF5G49 USF5G49 SF5J49 USF5J49 SF5J49 USF5J49 Average on-state current Rating Unit 400 VDRM VRRM V 600 500 VRSM V 720 IT (AV) 5 A IT (RMS) 7.8 A ITSM 65 (50 Hz) A I2t 20 A2s PGM 0.5 W PG (AV) 0.05 W Peak forward gate voltage VFGM 5 V Peak reverse gate voltage VRGM -5 V Peak forward gate current IGM 200 mA Tj -40~125 °C Tstg -40~125 °C R.M.S on-state current Peak one cycle surge on-state current (non-repetitive) I2t limit value Peak gate power dissipation Average gate power dissipation Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330 W Cathode JEDEC ― JEITA ― TOSHIBA 13-F2A Weight: 0.28 g (typ.) 1 2002-02-05 SF5G49,SF5J49,USF5G49,USF5J49 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Repetitive peak off-state current and Repetitive peak reverse current IDRM IRRM VDRM = VRRM = Rated RGK = 330 W ¾ ¾ 20 mA Peak on-state voltage VTM ITM = 12 A ¾ ¾ 1.6 V Gate trigger voltage VGT ¾ ¾ 0.8 V Gate trigger current IGT VD = 6 V, RL = 100 W RGK = 330 W 3 ¾ 70 mA Gate non-trigger voltage VGD VD = Rated ´ 2/3, Tc = 125°C 0.2 ¾ ¾ V Critical rate of rise of off-state voltage dv/dt VDRM = Rated ´ 2/3, Tc = 75°C RGK = 330 W, Exponential rise ¾ 50 ¾ V/ms RL = 100 W, RGK = 330 W ¾ 2.5 ¾ mA DC ¾ ¾ 6.0 °C/W Holding current IH Thermal resistance (junction to case) Rth (j-c) Marking F5G49 Mark ※1 ※1 ※2 F5J49 Type Name SF5G49, USF5G49 SF5J49, USF5J49 Lot Number ※2 Month (starting from alphabet A) Year (last decimal digit of the current year) Transient thermal impedance rth (j-c) (°C/W) Transient thermal impedance (junction to case) 10 1 0.1 0.001 0.01 0.1 1 10 Time t (s) 2 2002-02-05 SF5G49,SF5J49,USF5G49,USF5J49 Surge on-state current (non-repetitive) iT – vT 80 ITSM (A) Peak surge on-state current Instantaneous on-state current iT 10 1 Tj = 125°C 25°C 0.1 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 Instantaneous on-state voltage 2.1 vT 2.3 60 60 Hz 40 50 20 0 1 2.5 (V) IGT (Tc)/IGT (Tc = 25°C) – Tc 10 100 Number of cycles at 50 Hz and 60 Hz VGT (Tc)/VGT (Tc = 25°C) – Tc (typ.) 10 (typ.) 2.0 VD = 6 V VD = 6 V RL = 100 W RL = 100 W VGT (Tc)/VGT (Tc = 25°C) RGK = 330 W IGT (Tc)/IGT (Tc = 25°C) Rated load (A) 100 1 0.1 -50 0 50 100 Case temperature Tc 1.0 0.5 0 -50 150 (°C) IH (Tc)/IH (Tc = 25°C) – Tc RGK = 330 W 1.5 0 50 Case temperature Tc 100 150 (°C) (typ.) 2.0 VD = 6 V RGK = 330 W 1.5 IH – RGK (typ.) 10 1.0 ITM = 1 A Holding current IH (mA) IH (Tc)/IH (Tc = 25°C) ITM = 1 A 0.5 0 -60 -20 20 60 Case temperature Tc 100 Ta = 25°C 1 0.1 0.01 140 (°C) 0.1 1 Gate to cathode resistance 3 10 RGK 100 (kW) 2002-02-05 SF5G49,SF5J49,USF5G49,USF5J49 PT (AV) – IT (AV) Tc Max – IT (AV) 140 Half sine waveform Half sine waveform Maximum allowable case temperature Tc Max (°C) Average on-state power dissipation PT (AV) (W) 10 180° 8 a 0° 120° 180° 90° Conduction angle 6 60° a = 30° 4 2 0 0 1 2 3 4 Average on-state current 5 6 IT (AV) (A) 120 80 60 40 20 a = 30° 1 60° 2 PT (AV) – IT (AV) 240° 180° 8 Full sine waveform 120° a = 60° 4 0° 180° 360° a1 2 a2 Conduction angle a = a1 + a2 0 0 2 4 6 Average on-state current 8 IT (AV) Maximum allowable case temperature Tc Max (°C) Average on-state power dissipation PT (AV) (W) 360° 80 60 40 20 a = 60° 120° 180° 2 4 6 8 IT (AV) 10 (A) Tc Max – IT (AV) Maximum allowable case temperature Tc Max (°C) Average on-state power dissipation PT (AV) (W) 360° Rectangular waveform 360° DC 180° 120° 90° 60° a = 30° 4 2 2 240° 140 8 0 0 360° a1 a2 Conduction angle a = a1 + a2 Average on-state current Conduction angle 6 7 0° 180° 100 (A) Rectangular waveform 0° a 6 (A) 120 0 0 10 14 10 5 IT (AV) Full sine waveform PT (AV) – IT (AV) 12 4 180° Tc Max – IT (AV) 12 16 3 120° 140 14 6 90° Average on-state current 16 10 180° Conduction angle 0 0 7 a 0° 100 4 6 Average on-state current 8 IT (AV) 120 (A) 80 60 40 20 60° a = 30° 2 120° 90° 180° 4 DC 6 Average on-state current 4 360° Conduction angle 0 0 10 0° a 100 8 IT (AV) 10 (A) 2002-02-05 SF5G49,SF5J49,USF5G49,USF5J49 10 10 (typ.) dv/dt – CGK 4 10 3 10 3 RGK = 100 W Critical rate of rise of off-state voltage dv/dt (V/ms) Critical rate of rise of off-state voltage dv/dt (V/ms) RGK = 100 W 10 2 330 W 10 1 1 kW 10 10 2 330 W 10 1 1 kW 3.3 kW 0 (typ.) dv/dt – CGK 4 10 0 VD = 400 V Ta = 75°C 3.3 kW VD = 400 V Ta = 100°C CGK CGK RGK 10-1 -3 10 10-2 10-1 10 10-1 -3 10 0 Gate to cathode capacitance CGK (mF) VBO (Tc)/VBO (Tc = 25°C) – Tc RGK 10-2 10-1 10 0 Gate to cathode capacitance CGK (mF) (typ.) VBO (Tc)/VBO (Tc = 25°C) (%) 120 RGK = 100 W 100 330 W 80 1 kW 60 3.3 kW 40 10 kW 20 0 -80 -40 0 40 80 120 Case temperature Tc 160 200 (°C) 5 2002-02-05 SF5G49,SF5J49,USF5G49,USF5J49 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-02-05