P0102BL ® 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 0.25 A VDRM/VRRM 200 V IGT 200 µA G K A G DESCRIPTION K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as stand-by mode power supplies, smoke and alarm detectors... Available in SOT-23, it provides optimized space saving on high density printed circuit boards. SOT-23 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter Value Unit RMS on-state current (180° conduction angle) Tamb = 30°C 0.25 A IT(AV) Average on-state current (180° conduction angle) Tamb = 30°C 0.17 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 7 A I²t Value for fusing tp = 10 ms Tj = 25°C 0.18 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 0.5 A Tj = 125°C 0.02 W - 40 to + 150 - 40 to + 125 °C I ²t PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range September 2000 - Ed: 3 Tj = 25°C tp = 10 ms 6 1/5 P0102BL ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT Test Conditions RL = 140 Ω VD = 12 V VGT RL = 3.3 kΩ RGK = 1 kΩ P0102BL Unit MAX. 200 µA MAX. 0.8 V MIN. 0.1 V VGD VD = VDRM VRG IRG = 10 µA MIN. 8 V IH IT = 50 mA RGK = 1kΩ MAX. 6 mA IL IG = 1 mA RGK = 1kΩ MAX. 7 mA Tj = 125°C MIN. 200 V/µs Tj = 25°C MAX. 1.7 V Tj = 125°C dV/dt VD = 67 % VDRM RGK = 1kΩ VTM ITM = 0.4 A Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 1000 mΩ tp = 380 µs VDRM = VRRM IDRM Tj = 25°C IRRM 1 MAX. Tj = 125°C µA 100 THERMAL RESISTANCES Symbol Rth(j-a) Parameter Junction to ambient (mounted on FR4 with recommended pad layout) Value Unit 400 °C/W PRODUCT SELECTOR Part Number P0102BL Voltage Sensitivity Package 200 V 200 µA SOT-23 ORDERING INFORMATION P 01 02 B L Blank 5AA4 SENSITIVE SCR SERIES PACKING MODE: Tape & Reel CURRENT: 0.25A SENSITIVITY: 02: 200µA VOLTAGE: B: 200V PACKAGE: L: SOT-23 OTHER INFORMATION Part Number P0102BL 2/5 Marking P2B Weight Base quantity Packing mode 0.01 g 3000 Tape & reel P0102BL Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus ambient temperature. P(W) IT(av)(A) 0.30 0.28 α = 180 ° 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 360 ° 0.08 0.06 0.04 α 0.02 IT(av)(A) 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. 0.30 D.C 0.25 0.20 α = 180° 0.15 0.10 0.05 Tamb(°C) 0.00 0 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). K=[Zth(j-a)/Rth(j-a)] IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C] 1.00 6 5 4 0.10 IGT 3 2 IH & IL (Rgk = 1k Ω) 1 Tj(°C) tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). 0 -40 -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk] / dV/dt[Rgk = 1kΩ] IH[Rgk] / IH[Rgk = 1kΩ] 20 18 10.0 16 14 12 1.0 10 8 6 4 2 0 1E-2 Rgk(kΩ) Rgk(kΩ) 1E-1 1E+0 1E+1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/5 P0102BL Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. dV/dt[Cgk] / dV/dt [Rgk = 1k Ω] 10 8 ITSM(A) 7 VD = 0.67 x VDRM Tj = 125°C Rgk = 1k Ω 6 5 6 4 3 4 2 2 0 Number of cycles 1 Cgk(nF) 0 1 2 3 0 4 5 6 7 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 10 1 100 1000 Fig. 10: On-state characteristics (maximum values). ITM(A) ITSM(A),I 2t(A2s) 100.0 Tj initial = 25 °C 1E+1 ITSM 10.0 1E+0 1.0 1E-1 Tj max.: Vto = 1.00 V Rd = 1 Ω Tj = Tj max. Tj = 25°C I2t tp(ms) 0.1 0.01 0.10 1.00 10.00 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (°C/W) 500 400 300 200 100 S (mm 2) 0 4/5 0 10 20 30 40 50 60 70 80 90 100 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 P0102BL PACKAGE MECHANICAL DATA SOT-23 (Plastic) A E DIMENSIONS REF. Millimeters Inches e Min. D e1 B A A1 B c D e e1 E H L S S A1 L H Max. 0.89 1.4 0 0.1 0.3 0.51 0.085 0.18 2.75 3.04 0.85 1.05 1.7 2.1 1.2 1.6 2.1 2.75 0.6 typ. 0.35 0.65 Min. Max. 0.035 0.055 0 0.004 0.012 0.02 0.003 0.007 0.108 0.12 0.033 0.041 0.067 0.083 0.047 0.063 0.083 0.108 0.024 typ. 0.014 0.026 c FOOTPRINT DIMENSIONS (in millimeters) SOT-23 (Plastic) 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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