2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E = 150 mJ (min) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 7 V DC IC 5 Pulse ICP 8 IB 0.5 Collector current Base current Ta = 25°C Collector power dissipation PC Tc = 25°C Junction temperature Storage temperature range 2.0 30 A JEDEC A W Tj 150 °C Tstg −55 to 150 °C ― JEITA TOSHIBA SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 2SD2131 Electrical Characteristics (Tc = 25°C) Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 10 μA Collector cut-off current ICEO VCE = 45 V, IB = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 50 60 70 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V hFE (1) VCE = 3 V, IC = 3 A 2000 ― 15000 hFE (2) VCE = 3 V, IC = 5 A 1000 ― ― VCE (sat) (1) IC = 3 A, IB = 6 mA ― 1.1 1.5 VCE (sat) (2) IC = 5 A, IB = 20 mA ― 1.3 2.5 VBE (sat) IC = 3 A, IB = 6 mA ― 1.7 2.5 V (Note 1) 150 ― ― mJ Output ― 1.0 ― 10 Ω Characteristics ― 4.0 ― ― 2.5 ― DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Unclamped inductive load energy ES/B ton 20 μs Input Switching time Storage time IB2 IB1 Turn-on time tstg V IB1 IB2 μs VCC = 30 V Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% Note 1: Measurement circuit for unclamped inductive load energy VCC T.U.T L = 10 mH PW IB1 = 0.1 A 0 IB2 = −0.1 A IB1 ICP IB2 0 Clamp (C-B Zener) VCE IC Note 2: (1) Pulse width adjusted for desired ICP (ICP = 5.47 A min) (2) E = 1/2 L ICP2 Marking D2131 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2131 IC – VCE IC – VBE 8 5 8 1.5 (A) 1 Collector current IC 2 (A) Collector current IC Common emitter Tc = 25°C 3 6 0.7 4 0.5 IB = 0.3 mA 2 6 4 2 −55 Tc = 100°C Common emitter 25 VCE = 3 V 0 0 0 2 4 6 Collector-emitter voltage 0 0 10 8 0.8 VCE (V) 1.6 2.4 Base-emitter voltage hFE – IC 4.0 3.2 VBE (V) VCE – IB 30000 2.4 VCE (V) Common emitter VCE = 3 V 5000 3000 Tc = 100°C Collector-emitter voltage DC current gain hFE 10000 25 −55 1000 500 200 0.05 0.3 0.5 0.1 1 Collector current IC 3 5 10 20 IC = 8 A 2.0 5 1.6 1.2 3 1 0.8 0.1 0.4 Common emitter Tc = 25°C 0 0.1 (A) 0.3 0.5 1 3 5 10 30 50 100 300 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC 10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 IC/IB = 250 5 3 Tc = −55°C 1 25 0.5 0.3 0.1 100 0.3 0.5 1 Collector current IC 3 5 Common emitter 3 Tc = −55°C 1 (A) 25 100 0.5 0.3 0.1 10 IC/IB = 250 5 0.3 0.5 1 Collector current IC 3 3 5 10 (A) 2006-11-21 2SD2131 Rth – tw Transient thermal resistance Rth (°C/W) 100 (1) No heat sink Ta = 25°C (1) 30 (2) Infinite heat sink Tc = 25°C 10 (2) 3 1 0.3 0.1 0.001 0.1 0.01 1 Pulse width 10 tw 100 (s) PC – Ta Safe Operating Area 35 (W) 20 1 ms* IC max (continuous) (A) Collector current IC Collector power dissipation PC 10 I max (pulsed)* C 5 10 ms* 3 DC operation Tc = 25°C 1 0.5 *: Single nonrepetitive 0.3 0.1 1 1000 5 Infinite heat sink (1) (2) No heat sink 25 20 15 10 5 (2) 0 0 pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 (1) Tc = Ta 30 25 50 75 100 125 150 175 Ambient temperature Ta (°C) VCEO max 10 Collector-emitter voltage 30 50 100 VCE (V) 4 2006-11-21 2SD2131 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21