2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 μs (max) • High collector breakdown voltage: VCEO = 400 V Unit: mm tf = 1.5 μs (max), (IC = 0.5 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 0.8 Pulse ICP 1.5 IB 0.5 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 10 A A W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-7B1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-09 2SC3075 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V VCE = 5 V, IC = 0.1 A 20 ― 100 VCE = 5 V, IC = 0.5 A 10 ― ― DC current gain hFE Collector-emitter saturation voltage VCE (sat) IC = 0.1 A, IB = 0.01 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 0.1 A, IB = 0.01 A ― ― 1.0 V ― ― 1.0 ― ― 2.5 ― ― 1.5 Storage time tstg Fall time tf 20 μs INPUT IB2 IB1 IB2 IB1 = −IB2 = 0.05 A, Duty cycle ≤ 1% OUTPUT 400 Ω Switching time tr IB1 Rise on time μs VCC ≈ 200 V Marking C3075 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3075 IC – VCE hFE – IC 1000 300 Common emitter 80 40 30 600 20 10 400 Tc = 100°C 100 60 DC current gain hFE Collector current IC (mA) Tc = 25°C 800 5 50 25 30 −40 10 5 3 0 0 Common emitter IB = 2 mA 200 VCE = 5 V 1 1 0 2 4 6 8 Collector-emitter voltage 10 3 12 10 Collector current IC VCE (sat) – IC IC/IB = 10 Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 1 0.3 0.1 Tc = 100°C 0.05 25 −40 0.03 3 10 30 5 300 1000 (mA) Common emitter IC/IB = 5 3 1 0.5 0.3 0.1 Tc = 100°C 0.05 0.03 100 Collector current IC 300 1 1000 25 3 (mA) 10 −40 30 100 Collector current IC VBE (sat) – IC (mA) VBE (sat) – IC 10 Base-emitter saturation voltage VBE (sat) (V) 10 Base-emitter saturation voltage VBE (sat) (V) 1000 VCE (sat) – IC 0.5 Common emitter 5 IC/IB = 10 3 Tc = −40°C 1 0.5 0.3 25 100 0.1 1 300 10 3 1 100 VCE (V) 10 5 30 3 10 30 Collector current IC 100 300 Common emitter 5 (mA) Tc = −40°C 1 0.5 25 0.3 100 0.1 1 1000 IC/IB = 5 3 3 10 30 Collector current IC 3 100 300 1000 (mA) 2006-11-09 2SC3075 IC – VBE IC – VBE 1 1000 Common emitter Common emitter VCE = 5 V (mA) 10−1 10 −2 800 Tc = 100°C 25 Collector current IC Collector current IC (A) VCE = 5 V −40 600 400 −40 Tc = 100°C 25 200 10−3 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage 1.2 0 0 1.4 0.2 Switching Characteristics 0.8 1.0 1.2 VBE (V) Safe Operating Area 3 IC/IB = 10 30 IB1 = −IB2 IC max (pulsed)* (A) 50 Pulse width = 20 μs Duty cycle ≤ 1% 10 Collector current IC Switching time (μs) 0.6 Base-emitter voltage VBE (V) 100 Tc = 25°C tstg 5 3 tf 1 0.5 1 0.5 0.3 10 μs* IC max (continuous) 100 μs* DC operation Tc = 25°C 1 ms* 10 ms* 100 ms* 0.1 0.05 0.03 tr 0.3 0.1 0 0.4 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 0.2 0.1 0.3 0.4 Collector current IC 0.5 VCEO max 3 10 30 Collector-emitter voltage 100 300 1000 VCE (V) (A) rth – tw Curves should be applied in thermal limited area. Transient thermal resistance rth (°C/W) (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 100 (2) 10 (1) 1 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) 4 2006-11-09 2SC3075 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09