TOSHIBA 2SA1892

2SA1892
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1892
Power Amplifier Applications
Power Switching Applications
•
Unit: mm
Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −1 A, IB = −0.05 A)
•
High collector power dissipation: PC = 1.3 W
•
High-speed switching time: tstg = 1.0 μs (typ.)
•
Complementary to 2SC5029
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−3
A
Base current
IB
−0.2
A
JEDEC
―
Collector power dissipation
PC
1.3
W
JEITA
―
Junction temperature
Tj
150
°C
TOSHIBA
Tstg
−55 to 150
°C
Weight: 0.55 g (typ.)
Storage temperature range
2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SA1892
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
―
―
−1.0
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
―
―
−1.0
μA
V (BR) CEO
IC = −10 mA, IB = 0
−50
―
―
V
VCE = −2 V, IC = −0.5 A
70
―
240
hFE (2)
VCE = −2 V, IB = −1.5 A
40
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = −1 A, IB = −0.05 A
―
―
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −1 A, IB = −0.05 A
―
―
−1.2
V
fT
VCE = −2 V, IC = −0.5 A
―
100
―
MHz
VCB = −10 V, IE = 0, f = 1 MHz
―
40
―
pF
―
0.1
―
―
1.0
―
―
0.1
―
hFE (1)
DC current gain
(Note)
Transition frequency
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
IB1
Switching time
Input
IB2
20 μs
IB2
IB1
Output
30 Ω
Collector-emitter breakdown voltage
μs
VCC = −30 V
Fall time
tf
−IB1 = IB2 = 0.05 A, duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
A1892
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SA1892
VCE – IC
−0.8
VCE (V)
Common emitter
−1.0
Ta = 25°C
IB = −5 mA
−10
−20
−40
−80
−120
−0.6
−160
−0.4
−200
−0.2
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Collector current IC
−2.4
Common emitter
−1.0
−0.8
Ta = 100°C
−20
IB = −5 mA
−30 −40
−60
−0.6
−160
−180
−0.4
−200
−0.2
0
0
−2.8
−0.4
−0.8
(A)
−1.2
−1.6
VCE – IC
−2.8
(A)
hFE – IC
Common emitter
500
IB = −10 mA
−20
−30
−40
DC current gain hFE
Ta = −55°C
−60
−80
−0.6
−120
−160
−0.4
−200
300
VCE = −2 V
Ta = 100°C
25
100
−55
50
30
)
VCE (V)
Collector-emitter voltage
−2.4
1000
Common emitter
−0.2
0
0
10
−0.005 −0.01
−0.03
−0.8
−1.2
−1.6
−2.0
−2.4
−3
−1
(A)
(A)
VCE (sat) – IC
VBE (sat) – IC
−10
Base-emitter saturation voltage
VBE (sat) (V)
Common emitter
IC/IB = 20
−0.3
−0.1
−0.05
−0.3
−2.8
−1
−0.5
−0.1
Collector current IC
−0.4
Collector current IC
Collector-emitter saturation voltage
VCE (sat) (V)
−2.0
Collector current IC
−1.0
−0.8
−80
−120
Collector-emitter voltage
Collector-emitter voltage
VCE (V)
VCE – IC
Ta = 100°C
−0.01
−0.005 −0.01
−55
25
−0.03
−0.03
−0.1
−0.3
Collector current IC
−1
Common emitter
−5
IC/IB = 20
−3
Ta = −55°C
−1
−0.5
−0.3
100
−0.1
−0.005 −0.01
−3
(A)
25
−0.03
−0.1
−0.3
Collector current IC
3
−1
−3
(A)
2006-11-09
2SA1892
IC – VBE
−2.0
Common emitter
Collector current IC
(A)
VCE = −2 V
−1.5
−1.0
Ta = 100°C
25 −55
−0.5
0
0
−0.4
−0.8
Base-emitter voltage
−1.2
−1.6
VBE (V)
rth – tw
300
Curves should be applied in thermal limited area.
Transient thermal resistance
rth (°C/W)
(Single nonrepetitive pulse) Ta = 25°C
100
30
10
3
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
−10
PC – Ta
IC max (pulsed)*
−0.5
DC operation
Ta = 25°C
−0.3
−0.1
−0.05
−0.03
−0.02
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature
−0.3
−1
−3
(W)
−1
1.4
1.2
Collector power dissipation
IC
Collector current
1 ms*
100 ms*
PC
IC max (continuous)
(A)
−3
1.6
10 ms*
−5
VCEO max
−10
Collector-emitter voltage
−30
VCE
1.0
0.8
0.6
0.4
0.2
0
0
−100
(V)
25
50
75
100
125
150
175
Ambient temperature Ta (°C)
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2SA1892
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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