2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 0.6 μs (typ.) • High emitter-base breakdown voltage: V (BR) EBO = −14 V (min) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −14 V Collector current IC −12 A Base current IB −1.2 A PC 30 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC JEITA ― SC-67 TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1771 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −80 V, IE = 0 ― ― −10 μA Emitter cut-off current IEBO VEB = −14 V, IC = 0 ― ― −10 μA V (BR) CEO IC = −50 mA, IB = 0 −80 ― ― V hFE (1) VCE = −1 V, IC = −1 A 100 ― 320 hFE (2) VCE = −1 V, IC = −6 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −6 A, IB = −0.3 A ― −0.2 −0.4 Base-emitter saturation voltage VBE (sat) IC = −6 A, IB = −0.3 A ― −0.9 −1.2 fT VCE = −5 V, IC = −1 A ― 50 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 300 ― pF ― 0.2 ― ― 0.6 ― ― 0.1 ― DC current gain Transition frequency Collector output capacitance Turn-on time Cob ton Storage time tstg IB1 Switching time Input IB2 20 μs IB2 IB1 Output V 5Ω Collector-emitter breakdown voltage μs VCC ≈ −30 V Fall time tf −IB1 = IB2 = 0.3 A, duty cycle ≤ 1% Marking A1771 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1771 IC – VCE −12 −100 −80 VCE (V) −60 −70 −90 −50 −8 −40 Collector-emitter voltage Collector current IC (A) −10 VCE – IC −1.0 −30 −6 −20 −4 IB = −10 mA −2 Common emitter Tc = 25°C 0 0 −2 −4 −6 −8 −10 Collector-emitter voltage −12 −20 −0.8 −50 −700 −1000 −0.2 Common emitter 0 0 −14 Tc = 25°C IB = −10 mA −2 VCE (V) −4 −6 −8 Collector current IC −10 −12 (A) VCE – IC −20 −50 −150 −300 −500 −700 VCE (V) −0.8 −1000 Collector-emitter voltage −1.0 −0.6 −0.4 −0.2 Common emitter Tc = 100°C IB = −10 mA 0 0 −2 −4 −6 −8 Collector current IC −10 −0.8 −30 −70 −150 −300 −500 −0.6 −700 −0.4 −1000 −0.2 Common emitter ) VCE (V) −500 −0.4 VCE – IC Collector-emitter voltage −300 −0.6 −1.0 0 0 −12 Tc = −55°C IB = −10 mA −2 (A) −4 −6 −8 Collector current IC hFE – IC −10 −12 (A) VCE (sat) – IC 1000 −1 Common emitter Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = −1 V 500 Tc = 100°C DC current gain hFE −150 300 25 −55 100 50 30 10 −0.1 −0.3 −0.5 −1 −3 Collector current IC −5 −10 −0.5 −0.3 Tc = 100°C −0.1 (A) 25 −0.05 −55 −0.03 −0.01 −0.1 −20 IC/IB = 20 −0.3 −0.5 −1 −3 Collector current IC 3 −5 −10 −20 (A) 2006-11-09 2SA1771 IC – VBE VBE (sat) – IC −12 Common emitter IC/IB = 20 Common emitter VCE = −1 V −10 (A) −3 Tc = −55°C −1 −0.5 100 −8 Collector current IC Base-emitter saturation voltage VBE (sat) (V) −5 25 −0.3 Tc = 100°C −6 25 −4 −55 −2 −0.1 −0.1 −0.3 −0.5 −1 −3 −5 Collector current IC −10 −20 0 0 (A) −0.4 −0.8 −1.2 −2.0 −1.6 Base-emitter voltage −2.4 −2.8 VBE (V) rth – tw Transient thermal resistance rth (°C/W) 100 Curves should be applied in thermal limited area. 30 (2) (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.1 0.001 0.1 0.01 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area −30 IC max (pulsed)* 10 ms* PC – Tc 1 ms* 40 −3 DC operation Tc = 25°C −1 −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −1 −3 (1) Tc = Ta Infinite heat sink (2) No heat sink (W) PC −5 Collector power dissipation Collector current IC (A) −10 IC max (continuous) −10 VCEO max −30 Collector-emitter voltage 30 20 10 (2) 0 0 −100 VCE (V) (1) 40 80 120 160 200 Case temperature Tc (°C) 4 2006-11-09 2SA1771 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09