TG2401F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2401F 1.9 GHz Band TX Fronted IC PHS, Digital Cordless Telecommunication Features Common Block · Positive voltage operation: VDD1 = VDD2 = 3.0 V, VDD3 = VDD4 = 3.6 V · Small package: HSOP20 (0.5 mm pin pitch) Power Amp. Block · High power Gain: Gp = 32dB (min) Antenna Switch Block · Low insertion Loss: LOSS = 0.8dB (typ.) · Weight: 0.058 g (typ.) High isolation: ISL = 25dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Symbol Rating Unit VDD (Note 1) 5 V VGG (Note 2) 4 V 3.65 V 1 mW 4 W Topr (Note 5) -40 to 85 °C Tstg -55 to 150 °C VC (Note 3) Input power Power dissipation Operating temperature range Storage temperature range Pi Pd (Note 4) Note 1: VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD (SW) Note 2: VGG = VGG3 = VGG4 Note 3: VC = VC1 = VC2 Note 4: When mounted on a Teflon board (52 mm ´ 43 mm ´ 0.4 mm) that is fixed to an aluminum plate. (Ta = 25°C) Note 5: Not intended to guarantee the following electrical characteristics, which were measured at Ta = 25°C. Caution This device is electrostatic sensitivity. Please handle with caution. 1 2003-01-28 TG2401F Electrical Characteristics 【Power Amp, Block】 】 (VDD = VDD2 = 3 V, VDD3 = VDD4 = 3.6 V, VGG = (Note6), f = 1.893 GHz, Ta = 25°C, Zg = Zl = 50 W) 【ANT-SW Block】 】 (VDD (SW) = 3 V, f = 1.893 GHz, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Operating frequency f ¾ ¾ 1.893 ¾ 1.920 GHz Supply current (PA) It ¾ Po = 20.5dBmW, Pi = adjust ¾ ¾ 170 mA IGG ¾ VGG = 2 V ¾ ¾ 2 mA Power gain Gp ¾ Po = 20.5dBmW 32 ¾ 38 dB Output deviation DPo ¾ f = 1.893,1.920 GHz, Pi =fixed ¾ 0.5 1.0 dB VSWRin ¾ Pi = -30dBmW ¾ ¾ 3.0 ¾ ACP (1) ¾ ¾ ¾ -55 dB ACP (2) ¾ Po = 20.5dBmW, Df = 600 kHz Pi = adjust Df = 900 kHz ¾ ¾ -60 dB 2f0 ¾ ¾ ¾ -30 dB 3f0 ¾ ¾ ¾ -30 dB ¾ ¾ VDD3, 4 = 4.2 V, VGG = adjust, Po = 20.5dBmW, Pi = adjust, Zg = 50 W VSWR Load = 6:1 all phase No degradation ¾ ¾ VDD3, 4 = 3.2~4.2 V, VC1 = 3 V, VGG = adjust, Pi = -15dBmW to -10dBmW, Zg = 50 W VSWR Load = 6:1 all phase No spurious ¾ TX VC1 = 3 V, VC2 = 0 V ¾ ¾ 0.04 mA RX VC1 = 0 V, VC2 = 3 V ¾ ¾ 0.04 mA Irx TX VC1 = 3 V, VC2 = 0 V ¾ ¾ 0.04 mA Itx RX VC1 = 0 V, VC2 = 3 V ¾ ¾ 0.04 mA RX VC1 = 0 V, VC2 = 3 V, Pi (SW) = 0dBmW ¾ 0.8 1.0 dB TX VC1 = 3 V, VC2 = 0 V, PO = 20.5dBmW 20 25 ¾ dB RX VC1 = 0 V, VC2 = 3 V, Pi (SW) = 0dBmW 10 15 ¾ dB Characteristics Gate current (PA) Input VSWR Adjacent channel leakage power ratio Harmonics Load mismatch Stability ¾ Supply current (SW) IDD Control current (SW) Insertion Loss LOSS Isolation ISL Po = 20.5dBmW, Pi = adjust (1) The Po in this technical data includes insertion Loss for ANT-SW. (2) Stability’s load condition is that SHORT STAB join to ANT (Pin No.11) and all phase. (3) All test for ELCTRICAL CHARACTERISTICS bases on measure with following “RF TES BOARD”. (4) Control current is separated by TX and RX mode. TX control current is Irx, RX control current is Itx. (5) Operation mode RX Mode TX Mode VC1 0 ± 0.2 V 3 + 0.4 V 3 - 0.2 V VC2 3 + 0.4 V 3 - 0.2 V 0 ± 0.2 V VDD (SW) = 3 ± 0.05 V (6) Input signal is modulated to p/4QPSK (a = 0.5). Bit rate is 384 kbps. (7) 1/2 duty operation. 2 2003-01-28 TG2401F Note 6: Classify VGG Rank (UNDECIDED) Rank VGG Condition 000 0V 010 1V 020 2V 030 2.8 V Rank Indication Example) 0 1 0 VGG input voltage: 1.0 V Classify customer: standard products 0 Pin Assignment (top view) Marking 20 20191817161514131211 Lot No. 2401 1 2 3 4 5 6 7 8 9 10 Type name 1 Equivalent Circuit Pin No. 1 2 3 4 5 6 7 8 9 10 Assign Pin GND GND GND GND VGG4 VDD (SW) Rx GND VC2 Pin No. 11 12 13 14 15 16 17 18 19 20 Assign ANT GND VC1 Tx VDD4＆Pout VDD3 VGG3 VDD2 VDD1 MCin Pin 6.8 nH 10000 pF 100 pF 3.9 kW 2 pF 9 pF 10000 pF 100 pF Pin GND GND GND GND VGG4 VDD (SW) Rx GND VC2 Tx ANT Matching Circuit Test Circuit 10000 pF Matching Circuit VDD4&Pout MCin VDD1 VDD2 VGG3 VDD3 VGG4&OUT Tx VC1 GND ANT Rx 100 pF 100 kW 100 pF 100 pF 10000 pF 10000 pF 100 pF 10000 pF 10000 pF 1 pF 18 nH 100 pF 18 nH 9 pF 100 pF 10000 pF 10000 pF 9 pF Caution The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 3 2003-01-28 TG2401F Curve Data Po, It, ACP 2f0, 3f0 - Pi 22.5 -30 20 -40 17.5 -50 15 -60 (dB) -20 ACP, 2f0, 3f0 25 12.5 150 10 140 7.5 130 5 120 2.5 110 Gp (dB) It (mA) It (mA) Po (dBmW) VDD12 = 3 V, VDD34 = 3.6 V, f = 1920 MHz ACP (dB) 2f0 (dB) 3f0 (dB) 0 -30 -25 -20 -15 Pi -10 -5 100 0 (dBmW) Gp, ACP, 2f0, 3f0 - VDD34 -20 Gp (dB) -30 -40 32 -50 ACP, 2f0, 3f0 -10 GP 36 (dB) VDD12 = 3 V, VDD34 = 3.6 V, Po = 20.5dBmW, f = 1920 MHz 40 0 -60 28 Gp (dB) 130 125 It (mA) It (mA) 24 ACP (dB) 2f0 (dB) 3f0 (dB) 20 2.8 120 3 3.2 3.4 VDD34 3.6 3.8 (V) Gp, 2f0, 3f0, ACPR - Ta VDD12 = 3 V, VDD34 = 3.6 V, f = 1920 MHz 30 -30 25 -50 20 -70 15 130 10 120 5 110 Gp (dB) It (mA) It (mA) Gp (dB) 35 ACP, 2f0, 3f0 (dB) 40 ACP (dB) 2f0 (dB) 3f0 (dB) 0 -40 100 0 40 80 120 Ta (°C) 4 2003-01-28 TG2401F RF Test Board 5 2003-01-28 TG2401F Package Dimensions Weight: 0.058 g (typ.) 6 2003-01-28 TG2401F RESTRICTIONS ON PRODUCT USE 020704EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2003-01-28