HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -100 mA Collector current Q2 (MOS-FET) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V ID 50 mA DC drain current JEDEC ― JEITA ― TOSHIBA ― Weight: g (typ.) Marking Q1, Q2 Common Ratings (Ta = 25°C) Characteristics Symbol Rating Unit FT Collector power dissipation PC (Note) 200 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Equivalent Circuit (top view) Note: Total rating 6 5 Q2 Q1 1 1 4 2 3 2003-03-12 HN7G02FU Q1 (Transistor) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ¾ ¾ -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ¾ ¾ -100 nA DC current gain hFE VCE = -5 V, IC = -1 mA 120 ¾ 400 Collector-emitter saturation voltage Input resistor VCE (sat) IC = 5 mA, IB = -0.25 mA ¾ -0.1 -0.3 V ¾ 3.29 4.7 6.11 kW Test Condition Min Typ. Max Unit R1 Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C) Characteristics Symbol IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 20 ¾ ¾ V IDSS VDS = 20 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 3 V, ID = 0.1 mA 0.5 ¾ 1.5 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 10 mA 20 ¾ ¾ mS Drain-source ON resistance RDS (ON) ID = 10 mA VGS = 2.5 V ¾ 20 40 W Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage 2 2003-03-12 HN7G02FU Q1 (Transistor) IC – VI (ON) IC – VI (OFF) -3000 IC (A) -30 -10 -5 Collector current Collector current IC (A) -50 Ta = 100°C 25 -3 -25 -1 Common emitter -0.5 -0.3 -0.1 -1 -3 Input voltage -10 VI (ON) -30 -500 Ta = 100°C 25 -100 -30 -0 -100 Common emitter VCE = -5 V -0.2 -0.4 -0.6 -1 VI (OFF) -1.4 -1.6 (V) -3 Ta = 100°C -500 -300 25 -100 -25 -50 -30 Common emitter Collector-emitter saturation voltage VCE (sat) (V) -1000 -1 -0.5 -0.3 -0.1 Ta = 100°C -0.05 -0.03 -25 25 Common emitter VCE = -5 V -10 -0.1 -1.2 VCE (sat) – IC hFE – IC hFE -0.8 Input voltage (V) -3000 DC current gain -25 -300 -50 VCE = -0.2 V -0.3 -1000 -0.3 -1 -3 Collector current -10 IC -30 IC/IB = 20 -0.01 -0.1 -100 -0.3 -1 -3 Collector current (mA) 3 -10 IC -30 -100 (mA) 2003-03-12 HN7G02FU Q2 (MOS-FET) (a) Switching time test circuit ID 2.5 V OUT IN 10 mS VIN RL 50 9 0 2.5 V VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common source Ta = 25°C 90% (b) VIN VGS 10% 0 VDD 10% (c) VOUT VDS VDD 90% VDS (ON) tr tf ton ID – VDS ID – VDS (低電圧領域) 60 1.2 Common source Ta = 25°C (mA) 40 Ta = 25°C 1.1 1.2 0.8 ID 2.0 30 1.8 20 Drain current Drain current Common source 1.0 2.5 2.2 2.5 ID (mA) 50 toff 1.6 VGS = 1.4 V 10 1.05 0.6 0.4 VGS = 1.0 V 0.95 0.2 0.9 0.8 1.2 0 0 2 4 6 8 Drain-source voltage VDS 10 0 0 12 (V) 0.1 0.2 0.4 0.5 VDS 0.6 (V) ID – VGS 50 30 Common source 50 30 10 VGS = 0 Ta = 25°C 10 (mA) 5 3 Common source VDS = 3 V D 5 3 Ta = 100°C ID IDR (mA) IDR – VDS 1 G 1 IDR Drain current ドレイン逆電流 0.3 Drain-source voltage 0.5 0.3 S 0.1 0.05 0.03 0.01 0 0.5 0.3 25 -25 0.1 0.05 0.03 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-source voltage -1.2 VDS -1.4 -1.6 0.01 0 -1.8 (V) 1 2 3 Gate-source voltage 4 4 VGS 5 (V) 2003-03-12 HN7G02FU ïYfsï – ID C – VDS 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source 50 VDS = 3 V Ta = 25°C 50 30 (pF) (mS) 30 Capacitance C 10 10 5 Ciss 3 Coss Crss 1 5 0.5 3 0.5 1 3 5 10 Drain current 30 ID 50 0.3 0.1 100 0.3 0.5 1 (mA) VDS (ON) – ID 5 VDS 10 20 (V) t – ID 1000 Common source (ns) VGS = 2.5 V 1000 Ta = 25°C 500 toff t 300 Switching time 100 50 30 tf 100 ton tr ID 2.5 V VIN 0 10 5 0.5 10 ms 1 3 5 10 Drain current 30 ID 50 10 0.3 100 (mA) 1 50 9 Drain-source ON resistance VDS (ON) (mV) 3000 3 Drain-source voltage 3 VOUT D.U. < = 1% RL ïYfsï Forward transfer admittance 100 VIN: tr, tf < 5 ns (Zout = 50 W) VDD = 3 V 10 Drain current Common source Ta = 25°C 30 ID 100 (mA) PD – Ta Power Dissipation PD (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 5 2003-03-12 HN7G02FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-03-12 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.