TLP176D TOSHIBA Photocoupler GaAs IRED & Photo-MOSFET TLP176D Modem in PC Modem ⋅ Fax Card Telecommunication Unit: mm The TOSHIBA TLP176D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP176D is suitable for modem and PBX applications which require space savings. • SOP 4 pin (2.54SOP4): 1-form-A • Peak off-state voltage: 200 V (min) • Trigger LED current: 3 mA (max) • On-state current: 200 mA (max) • On-state resistance: 8 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL recognized: UL1577, file No. E67349 Pin Configuration (top view) 1-form A 1 4 2 3 JEDEC ⎯ JEITA ⎯ TOSHIBA 4 3 1 2 Weight: 0.1 g (typ.) 1: Anode 2: Cathode 3: Drain 4: Drain Internal Circuit 1 4 2 3 1 2007-10-01 TLP176D Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA Forward current derating (Ta ≥ 25°C) ΔIF/°C −0.5 mA/°C Pulse forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 200 V ION 200 mA ΔION/°C −2.0 mA/°C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note) BVS 1500 Vrms Forward current LED Off-state output terminal voltage On-state current Detector On-state RMS current derating (Ta ≥ 25°C) Junction temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together. Recommended Operating Conditions Characteristics Supply voltage Symbol Min Typ. Max Unit VDD ⎯ 150 200 V Forward current IF 5 7.5 25 mA On-state current ION ⎯ ⎯ 130 mA Operating temperature Topr −20 ⎯ 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP176D Individual Electrical Characteristics (Ta = 25°C) Characteristics LED Detector Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF Off-state current IOFF VOFF = 200 V ⎯ ⎯ 1 μA Capacitance COFF V = 0, f = 1 MHz ⎯ 100 ⎯ pF Min Typ. Max Unit ION = 200 mA ⎯ 1 3 mA ION = 200 mA, IF = 5 mA ⎯ 5 8 Ω Min Typ. Max Unit ⎯ 0.8 ⎯ pF ⎯ Ω Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Trigger LED current IFT On-state resistance RON Test Condition Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance input to output CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5× 10 10 10 AC, 1 minute 1500 ⎯ ⎯ AC, 1 second, in oil ⎯ 3000 ⎯ DC, 1 minute, in oil ⎯ 3000 ⎯ Vdc Min Typ. Max Unit Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Turn-on time tON RL = 200 Ω VDD = 20 V, IF = 5 mA (Note) ⎯ 0.6 1.5 ms Turn-off time tOFF RL = 200 Ω VDD = 20 V, IF = 5 mA (Note) ⎯ 0.1 1.0 ms Note: Switching time test circuit IF 1 4 2 3 RL VDD IF VOUT 90% VOUT 10% tON 3 tOFF 2007-10-01 TLP176D IF – Ta ION – Ta 350 MOSFET ON-state current ION (mA) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 20 40 60 80 300 250 200 150 100 50 0 −20 100 0 Ambient temperature Ta (°C) IF – V F MOSFET ON-state current ION (mA) Ta = 25°C Allowable forward current IF (mA) 30 10 3 1 0.3 1.0 1.2 1.4 1.6 200 Ta = 25°C IF = 5 mA 100 0 −100 −200 −300 −1 1.8 Forward voltage VF (V) −0.5 RON – Ta t<1s Relative trigger LED current IFT/IFT (Ta = 25°C) MOSFET ON-state resistance RON (Ω) 1 VON (V) ION = 200 mA t<1s IF = 5 mA 6 4 2 0 0.5 IFT – Ta 5 ION = 200 mA 0 −20 0 MOSFET ON-state voltage 10 8 100 ION – VON 300 0.8 80 60 Ambient temperature Ta (°C) 100 0.1 0.6 40 20 20 40 60 80 4 3 2 1 0 −40 100 Ambient temperature Ta (°C) −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 4 2007-10-01 TLP176D tON, tOFF – IF tON, tOFF – Ta 3000 tON (μs) Ta = 25°C VDD = 20 V RL = 200 Ω 1000 Switching time tON, tOFF Switching time tON, tOFF (μs) 3000 300 100 tOFF 30 10 1 3 5 10 30 50 Forward current IE 100 1000 (mA) RL = 200 Ω IF = 5 mA 300 100 30 10 −40 300 500 VDD = 20 V −20 0 20 40 60 80 100 Ambient temperature Ta (°C) IOFF – Ta 100 MOSFET OFF-state current IOFF (mA) VOFF = 200 V 30 10 3 1 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2007-10-01 TLP176D RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Product names mentioned herein may be trademarks of their respective companies. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01