HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 Gate-source voltage VGSS ID DC drain current JEDEC ― V JEITA ― 10 V TOSHIBA 50 mA Rating Unit 100 mW Tj 150 °C Tstg −55~150 °C 2-2N1F Weight:0.003g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 FT Q2 Q1 1 4 2 3 1 2007-11-01 HN7G02FE Q1 (Transistor) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cutoff current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −100 nA DC current gain hFE VCE = −5 V, IC = −1 mA 120 ⎯ 400 Collector-emitter saturation voltage VCE (sat) Input resistor IC = −5 mA, IB = −0.25 mA ⎯ R1 ⎯ −0.1 −0.3 V 3.29 4.7 6.11 kΩ Min Typ. Max Unit Q2 (MOSFET) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.7 ⎯ 1.3 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 25 50 ⎯ mS Drain-source ON-resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 4 12 Ω Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 11.0 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.3 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF Switching time Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.16 ⎯ Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.19 ⎯ μs Switching Time Test Circuit (a) Switching time test circuit ID 2.5 V OUT 10 μS VIN RL 0 50 Ω IN VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C VDD 2.5 V (b) VIN VGS 0 90% 10% VDD 10% (c) VOUT VDS 90% VDS (ON) tr ton 2 tf toff 2007-11-01 HN7G02FE (mA) (μA) Q1 (Transistor) 3 2007-11-01 HN7G02FE Q2 (MOSFET) 4 2007-11-01 HN7G02FE Q2 (MOSFET) 5 2007-11-01 HN7G02FE Q1, Q2 Common P* – Ta POWER DISSIPATION PC (mW) 200 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 175 Ta (°C) *:Total rating 6 2007-11-01 HN7G02FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01