SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages Absolute Maximum Ratings (Ta = 25°C) 3 Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V ID 100 mA PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C 0.13±0.05 Rating Drain power dissipation (Ta = 25°C) 1 2 Symbol DC drain current 0.8±0.05 0.5±0.05 Characteristics 1.2±0.05 0.32±0.05 2.5 V gate drive 0.4 • 0.8±0.05 With built-in gate-source resistor: RGS = 1 MΩ (typ.) 0.4 • 1.2±0.05 0.22±0.05 Unit: mm 1. Gate 2. Source 3. Drain JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2L1B temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit 3 3 DC 1 RGS 2 1 2 1 2007-11-01 SSM3K04FV Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 15 μA V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.7 ⎯ 1.3 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 25 50 ⎯ mS Drain-source on-resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 4 12 Ω Gate threshold voltage Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 11.0 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.3 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF Switching time Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.16 ⎯ Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.19 ⎯ VGS = 0~10 V 0.7 1.0 1.3 Gate-source resistor RGS μs MΩ Switching Time Test Circuit (a) Test circuit (b) VIN VGS (c) VOUT VDS Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Take this into consideration when using the device. 2 2007-11-01 SSM3K04FV 3 2007-11-01 SSM3K04FV PD – Ta Drain power dissipation PD (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM3K04FV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01