TA8050F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8050F 1.5 A DC Motor Driver with Brake Function The TA8050F is a 1.5 A motor driver which directly drives a bidirectional DC motor. Inputs DI1 and DI2 are combined to select one of forward, reverse, stop, and brake modes. Since the inputs are TTL-compatible, this IC can be controlled directly from a CPU or other control system. The IC also has various protective functions. Features · Bidirectional DC motor driver · Current capacity : 1.5 A · Four modes : Forward, Reverse, Stop, and Brake · Recommended operating supply voltage range : VCC = 6~16 V · Protective functions : Thermal Shutdown, Short Circuit Protection, and Overvoltage Shutdown · Built-in diode for counteracting counter electromotive force · HSOP-20 Pin power flat package Weight: 0.79 g (typ.) Block Diagram and Pin Layout 20 19 18 17 M (-) GND M (+) 16 FIN 15 14 13 12 11 Thermalshutdown and over-voltage protection Short protection 1 VCC 2 3 VCC Control logic 4 5 FIN 6 GND 7 8 9 10 DI1 DI2 1 2002-02-27 TA8050F Pin Description Pin No. Symbol 1 3 VCC Power supply pin. This pin has a function to turn off the output when the applied voltage exceeds 27.5 V, thus protecting the IC and the load. FIN GND Grounded 8 9 DI1 DI2 15 M (+) Connects to the DC motor. Both the sink and the source have a current capacity of 1.5 A. Diodes for absorbing counter electromotive force are contained on the VCC and GND sides. 16 M (-) Connects to the DC motor together with pin 15 and has the same function as pin 3. This pin is controlled by the inputs from pins 8 and 9. 2, 4~7 10~14 17~20 NC Truth Table Description Output status control pin. Connects to a PNP-type voltage comparator. Not connected. (Electrically, this pin is completely open.) Input/Output Input Output DI1 DI2 M (+) M (-) H H L L L H L H H L H L L L OFF (high impedance) (Note 1) (Note 2) Note 1: Brake mode comes into effect when both M (+) and M (-) go low. Note 2: Stop mode comes into effect when both M (+) and M (-) turn OFF. 2 2002-02-27 TA8050F Description of Multi-Protective Operation The TA8050F has functions for protection from overvoltage (VSD), overcurent (ISD), and overheat (TSD). These functions protect the IC (and the motor load in some cases) from deterioration or destruction due to power-related overstress. The three functions work independently. Each function is explained below. VSD M (+) M (-) ISD TSD CONTROL LOGIC DI1 DI2 1. Overvoltage protection (VSD) ● Basic operation When the voltage supplied to the VCC pin is up to the VSD detection voltage, the output is controlled by the input signals. However, when the VCC voltage exceeds the detection voltage, the output enters high-impedance state regardless of the input signals. ● Detailed explanation The VSD voltage is detected by comparing the Zener voltage with the voltage obtained by dividing VCC with a resistor. When the center voltage of the resistor is higher than the Zener voltage, a transistor-off instruction is issued to the control logic. When it is lower than the Zener voltage, the logic is controlled by the input signals from DI1 and DI2. 2. Overheat protection (TSD) ● Basic operation When the junction (chip) temperature is up to the TSD detection temperature, the output is controlled by the input signals. When it exceeds the TSD detection temperature, the output enters high-impedance state regardless of the input signals. ● Detailed explanation The temperature is detected by monitoring VF of a diode on the chip. When the diode VF is lower than the internal reference voltage, an output transistor-off instruction is issued to the control logic. When it is higher than the internal reference voltage, the logic is controlled by the input signals from DI1 and DI2. 3 2002-02-27 TA8050F 3. Overcurrent protections (ISD) · Basic operation When the output current (M (+) or M (-)、Isink or Isource) is up to the ISD detection current, the output is controlled by the input signals. When it exceeds the detection current, the output assumes a switching waveform as shown in Figure 1. ON ON ON ON ISD or more OFF 20 ms Typ. Figure 1 ● OFF OFF 80 ms Typ. Basic operation Detailed explanation The output current is detected by monitoring the VBE from each output transistor. One detection circuit connects to one of the output transistors and leads to the short-circuit protection circuit. When a current exceeding the ISD detection current flows through one of the four output transistors, the short-circuit protection circuit is activated. This circuit contains a timer. When overcurrent condition continues for 20 ms (typically) , the protection circuit places the output in high-impedance mode and, 80 ms (typically) later, returns the IC to ON mode. The switching-waveform output is repeated until overcurrent condition is no longer present. 4 2002-02-27 TA8050F Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating VCC 30 VCC 60 (1 s) VIN -0.3~VCC Supply voltage Input voltage Output current Unit V V IO•AVE 1.5 A Operation temperature Topr -40~110 °C Storage temperature Tstg -55~150 °C Lead temperature time Tsol 260 (10 s) °C HSOP20-P-450-1.00 Thermal Resistance Data (Ta = 25°C) Characteristics Rating Unit Test Condition Rqj-a 125 °C/W ¾ Rqj-c 13 °C/W ¾ PD1 1.0 W Without radiation board PD2 1.5 W 60 ´ 30 ´ 1.6 mm 50%Cu mounted PD3 3.2 W 50 ´ 50 ´ 1.0 mm Iron board mounted PD4 9.6 W Infinite radiation board mounted Electrical Characteristics (Unless otherwise specified, VCC = 6~16 V, Tc = -40~110°C) Characteristics Symbol Pin Test Circuit ICC1 Current consumption ICC2 VCC ICC3 Input voltage VIL DI1/DI2 VIH Input current IIL DI1/DI2 IIH Output saturation voltage Output leakage current Vsat (total) ILEAK-U M (+)/M (-) M (+)/M (-) ILEAK-L Diodes forward voltage VF-U M (+)/M (-) VF-L Test Condition Min Typ. Max ¾ Stop ¾ 8 15 ¾ Forward/Reverse ¾ 27 50 ¾ Brake ¾ 16 30 ¾ ¾ ¾ ¾ 0.8 ¾ ¾ 2.0 ¾ ¾ ¾ VIN = 0.4 V ¾ ¾ -100 ¾ VIN = VCC ¾ ¾ 100 ¾ IO = 1.5 A, Tc = 25°C ¾ 2.2 2.9 ¾ IO = 1.5 A, Tc = 110°C ¾ 2.2 2.8 ¾ VO = 0 V ¾ ¾ -100 ¾ VO = VCC ¾ ¾ 100 ¾ IF = 1.5 A ¾ 2.6 ¾ ¾ 1.5 ¾ Unit mA V mA V mA V Over-current detection ISD ¾ ¾ 1.8 3 4 A Shutdown temperature TSD ¾ ¾ ¾ 150 ¾ °C Over-voltage detection VSD ¾ ¾ 25 27.5 30 V tPLH tPHL ¾ ¾ ¾ 1 10 Transfer delay time ¾ ¾ ¾ 1 10 mS Note 3: The parameter values above are guaranteed in the operating voltage rage of 6 V to 16 V. If the guaranteed range is exceeded in practical use, make sure that the IC operates normally in application. 5 2002-02-27 TA8050F I/O Equivalent Circuit VCC 1, 3 M (+) M (-) 15 16 GND FIN Thermal shutdown and overvoltage protection circuits Short protection circuit Control logic DI1 DI2 8 9 6 2002-02-27 TA8050F VOL, VOH – IOUT PD MAX – Ta 10 25°C 0.5 (W) 110°C 1.0 Output saturation voltage (1) Infinite radiation board (2) 50 ´ 50 ´ 1.0 mm Fe (3) 60 ´ 30 ´ 1.6 mm Cu 50% PCB board (4) No radiation board (1) -40°C Maximum power dissipation PD MAX VOH (V) 0 1.5 2.0 1.5 -40°C 1.0 8 6 4 (2) VOL (V) 2 110°C (3) 0.5 25°C 0 0 (4) 0.5 1.0 Output current IOUT 0 0 1.5 50 (A) 100 150 200 Ambient temperature Ta (°C) Example of Application Circuit +V * C1 5V 10 mF VDD OUTPUT PORT1 8 DI1 PORT2 9 DI2 1 3 VCC VCC M (-) 16 TA8050F M M (+) 15 VSS GND FIN Microprocessor *: Connect this capacitor as close to the IC as possible. 7 2002-02-27 TA8050F Package Dimensions Weight: 0.79 g (typ.) 8 2002-02-27 TA8050F RESTRICTIONS ON PRODUCT USE 000707EAA_S · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-02-27