Switching Diodes MA4X193 (MA193) Silicon epitaxial planar type Unit : mm Silicon epitaxial planar type + 0.2 2.8 − 0.3 + 0.25 Rating + 0.1 0.4 − 0.05 0.5 0.95 1 VR 80 V Repetitive peak reverse voltage VRRM 80 V Average forward current IF(AV) 70 mA Repetitive peak forward current IFRM 150 mA Non-repetitive peak forward surge current* IFSM 250 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 + 0.1 0.16 − 0.06 0.6 − 0 0.2 Unit 0.1 to 0.3 0.4 ± 0.2 Reverse voltage (DC) 2 + 0.1 3 0 to 0.1 Symbol 4 0.95 + 0.2 2.9 − 0.05 + 0.2 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.9 ± 0.2 0.5 R • Mini type 4-pin package, contained four elements • Short reverse recovery time trr • Bridge diodes for surface mounting • Anode common + cathode common composite product + 0.1 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 1: Cathode 1 3: Anode 3 Anode 2 Cathode 4 2: Cathode 2, 3 4: Anode 1, 4 Mini Type Package (4-pin) Marking Symbol: M2Z Internal Connection Note) * : t = 1 s 4 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 70 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 10 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 194 Switching Diodes MA4X193 4-1 and 4-3 pins (anode common) characteristics charts IF V F IR V R 103 VF Ta 104 1.6 Ta = 150°C 1.4 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 Forward voltage VF (V) 103 Reverse current IR (nA) Forward current IF (mA) 102 100°C 102 25°C 10 1.2 1.0 0.8 IF = 100 mA 0.6 10 mA 3 mA 0.4 1 0.2 10−2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 10−1 1.2 0 20 80 100 Reverse voltage VR (V) IR Ta 40 60 8 Reverse current IR (nA) Terminal capacitance Ct (pF) 35 V 103 6V 102 10 1 6 5 4 3 2 1 0 80 120 160 Ambient temperature Ta (°C) 200 0 20 40 60 80 80 120 1 000 Forward surge current IF(surge) (A) 7 40 40 160 200 IF (surge) tW f = 1 MHz Ta = 25°C VR = 75 V 0 0 Ambient temperature Ta (°C) Ct VR 104 10−1 −40 0 −40 120 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) tW Non repetitive 300 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 30 Pulse width tW (ms) 195 MA4X193 Switching Diodes 1-2 and 3-2 pins (cathode common) characteristics charts IF V F IR V R 103 105 102 104 VF Ta 1.6 Ta = 150°C 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) 1.4 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 0.4 3 mA 10 0.2 1 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0 20 IR Ta 105 Terminal capacitance Ct (pF) Reverse current IR (nA) 102 10 80 120 160 Ambient temperature Ta (°C) 196 100 0 −40 120 0 40 200 120 0.8 0.6 0.4 0.2 0 20 40 60 80 160 200 IF (surge) tW 1 000 1.0 0 80 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 103 40 80 Ct VR 35 V 6V 0 60 1.2 VR = 75 V 104 1 −40 40 Reverse voltage VR (V) 100 Reverse voltage VR (V) 120 Forward surge current IF(surge) (A) 10−2 Ta = 25°C IF(surge) tW Non repetitive 300 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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