Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type Unit : mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 3 2 1 (0.65) • Three isolated elements contained in one package, allowing highdensity mounting • Allowing high voltage rectification 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Reverse voltage (DC) VR 200 V Peak reverse voltage VRM 200 V IO 100 mA Output current Single Triple Repetitive peak forward current Single 1: Cathode 1 4: Anode 1 2: Cathode 2 5: Anode 2 3: Cathode 3 6: Anode 3 Mini6-G1 Package 200 IFRM 200 Triple Single Non-repetitive peak forward surge current* Triple 1.1+0.2 –0.1 Symbol mA 600 IFSM 350 1.1+0.3 –0.1 10° 0 to 0.1 Parameter 0.4±0.2 5 ■ Features 2.8+0.2 –0.3 4 0.16+0.10 –0.06 5° For small power current rectification Marking Symbol: M4F mA Internal Connection 1 000 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) * : t = l s 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 0.2 µA Forward voltage (DC) VF IF = 200 mA 1.2 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4.5 pF Note) Rated input/output frequency: 3 MHz Note) The part number in the parenthesis shows conventional part number. 223 MA6X129 Rectifier Diodes IF VF VF Ta 1 000 IR V R 100 1.6 Ta = 150°C 100°C 25°C 1.4 − 20°C 10 1 1.2 1.0 IF = 200 mA 0.8 10 mA 3 mA 0.6 0.4 Reverse current IR (nA) 10 Ta = 150°C Forward voltage VF (V) Forward current IF (mA) 100 0.1 100°C 1 0.1 25°C 0.01 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.001 0 100 V 10 V 0.1 0.01 80 120 160 Ambient temperature Ta (°C) 224 0 40 200 80 120 160 200 240 Reverse voltage VR (V) IF(surge) tW 1 000 Ta = 25°C 5 4 3 2 1 0 40 200 Forward surge current IF(surge) (A) Reverse current IR (nA) 1 0 160 Ct VR 10 0.001 −40 120 6 Terminal capacitance Ct (pF) VR = 200 V 80 Ambient temperature Ta (°C) IR Ta 100 40 0 50 100 150 200 250 Reverse voltage VR (V) 300 300 IF(surge) tW 100 30 10 Breakdown point (typ) 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30 60 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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