PANASONIC MIP0210SP

Intelligent Power Devices (IPDs)
MIP0210SP
Silicon MOS IC
■ Features
unit: mm
7
3
6
4
5
● Switching power supply (to 7W)
● AC adaptor
● Battery charger
+0.25
6.3±0.2
0.6 –0.1
3.8±0.25 4.0±0.3
1: Source
2: Source
+0.1
3: Source
.05
0.25 –0
4: Control
5: Drain
6: Source
7: Source
8: Source
DIL-8P Type Package
7.62±0.25
3 to 15
■ Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter
1.2±0.25
8
2
2.54±0.25
■ Applications
1
9.4±0.3
0.5±0.1
● Single chip IC with high breakdown voltage power MOS FET and
CMOS control circuits
● Allowing to input worldwide mains (AC 85 to 274V)
● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
Symbol
Ratings
Unit
Drain voltage
VD
700
V
Control voltage
VC
8
V
Output current
ID
1.25
A
Control current
IC
0.1
mA
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Block Diagram
Auto-restart
Control pin
Drain pin
Shutdown/Auto-restart
Auto-restart current-source
Shunt
regulator
5.7V
4.7V
+
Power supply
for internal circuit
+
-
1/2
1/2
1/2
Ron X ID
+
-
Timer auto-restart circuit
PWM
control current
Thermal
shutdown
circuit
S
R
Restarting
trigger circuit
Q
Power
MOS FET
Q
Max Duty
Clock
Sawtooth
RE
Low pass filter
S
+
R
Q
Q
Leading edge
blanking
Minimum ON-time
delay circuit
Source pin
1
Intelligent Power Devices (IPDs)
MIP0210SP
■ Electrical Characteristics (TC = 25 ± 2°C)
Parameter
Control functions
Auto-restart
Circuit protection
min
typ
max Unit
Output frequency
fOSC
Symbol
IC = 2mA
Conditions
90
100
110
kHz
Maximum duty cycle
MAXDC IC = 2mA
64
67
70
%
Minimum duty cycle
MINDC IC = 10mA
3
%
Control pin charging current
IC
Auto-restart threshold voltage
Lockout threshold voltage
Auto-restart hysteresis voltage
∆VC
Auto-restart duty cycle
TSW/TTIM
Auto-restart frequency
fTIM
Self-protection current limit
ILIMIT
Leading edge blanking delay
ton(BLK)
IC = 3mA
0.25
µs
Current limit delay
td(OCL)
IC = 3mA
0.1
µs
VC = 0
5
5.7
6.3
V
VC(off)
4
4.7
5.3
V
0.5
1
1.5
V
5
8
%
1.2
0.23
IC = 3mA
0.29
Hz
0.35
A
130
140
150
°C
2.3
3.3
4.2
V
31
36
Ω
0.01
0.25
mA
0.1
0.2
µs
0.1
0.2
µs
ON-state resistance
RDS(on)
ID = 50mA
OFF-state current
IDSS
VDS = 650V, Output MOS FET disabled
Breakdown voltage
VDSS
ID = 0.25mA, Output MOS FET disabled 700
Rise time
tr
Fall time
tf
Drain supply voltage
VD(MIN)
Shunt regulator voltage
VC
IC = 3mA
5.5
5.8
6.1
V
ICD1
Output MOS FET enabled
0.7
1.4
1.8
mA
ICD2
Output MOS FET disabled
0.5
0.8
1.1
mA
Control supply/discharge current
2
mA
VC(on)
Power-up reset threshold voltage VC reset
Power supply voltage
−1.2
−1.5 − 0.8
Thermal shutdown temperature TOTP
Output
−2.4 −1.9
−2
VC = 5V
V
36
V