Intelligent Power Devices (IPDs) MIP0210SP Silicon MOS IC ■ Features unit: mm 7 3 6 4 5 ● Switching power supply (to 7W) ● AC adaptor ● Battery charger +0.25 6.3±0.2 0.6 –0.1 3.8±0.25 4.0±0.3 1: Source 2: Source +0.1 3: Source .05 0.25 –0 4: Control 5: Drain 6: Source 7: Source 8: Source DIL-8P Type Package 7.62±0.25 3 to 15 ■ Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter 1.2±0.25 8 2 2.54±0.25 ■ Applications 1 9.4±0.3 0.5±0.1 ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. Symbol Ratings Unit Drain voltage VD 700 V Control voltage VC 8 V Output current ID 1.25 A Control current IC 0.1 mA Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ■ Block Diagram Auto-restart Control pin Drain pin Shutdown/Auto-restart Auto-restart current-source Shunt regulator 5.7V 4.7V + Power supply for internal circuit + - 1/2 1/2 1/2 Ron X ID + - Timer auto-restart circuit PWM control current Thermal shutdown circuit S R Restarting trigger circuit Q Power MOS FET Q Max Duty Clock Sawtooth RE Low pass filter S + R Q Q Leading edge blanking Minimum ON-time delay circuit Source pin 1 Intelligent Power Devices (IPDs) MIP0210SP ■ Electrical Characteristics (TC = 25 ± 2°C) Parameter Control functions Auto-restart Circuit protection min typ max Unit Output frequency fOSC Symbol IC = 2mA Conditions 90 100 110 kHz Maximum duty cycle MAXDC IC = 2mA 64 67 70 % Minimum duty cycle MINDC IC = 10mA 3 % Control pin charging current IC Auto-restart threshold voltage Lockout threshold voltage Auto-restart hysteresis voltage ∆VC Auto-restart duty cycle TSW/TTIM Auto-restart frequency fTIM Self-protection current limit ILIMIT Leading edge blanking delay ton(BLK) IC = 3mA 0.25 µs Current limit delay td(OCL) IC = 3mA 0.1 µs VC = 0 5 5.7 6.3 V VC(off) 4 4.7 5.3 V 0.5 1 1.5 V 5 8 % 1.2 0.23 IC = 3mA 0.29 Hz 0.35 A 130 140 150 °C 2.3 3.3 4.2 V 31 36 Ω 0.01 0.25 mA 0.1 0.2 µs 0.1 0.2 µs ON-state resistance RDS(on) ID = 50mA OFF-state current IDSS VDS = 650V, Output MOS FET disabled Breakdown voltage VDSS ID = 0.25mA, Output MOS FET disabled 700 Rise time tr Fall time tf Drain supply voltage VD(MIN) Shunt regulator voltage VC IC = 3mA 5.5 5.8 6.1 V ICD1 Output MOS FET enabled 0.7 1.4 1.8 mA ICD2 Output MOS FET disabled 0.5 0.8 1.1 mA Control supply/discharge current 2 mA VC(on) Power-up reset threshold voltage VC reset Power supply voltage −1.2 −1.5 − 0.8 Thermal shutdown temperature TOTP Output −2.4 −1.9 −2 VC = 5V V 36 V