TLWR/Y8900 Vishay Semiconductors TELUX™ FEATURES • Utilizing one of the world’s brightest (AS) AllnGaP technologies • High luminous flux e3 • Supreme heat dissipation: RthJP is 90 K/W • High operating temperature: Tamb = - 40 to + 110 °C • Meets SAE and ECE color requirements for the automobile industry for color red • Packed in tubes for automatic insertion • Luminous flux, forward voltage and color categorized for each tube • Small mechanical tolerances allow precise usage of external reflectors or lightguides • Lead (Pb)-free device • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Compatible with IR Reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020C • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B 19232 DESCRIPTION The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed (AS) AllnGaP technology. The supreme heat dissipation of TELUX™ allows applications at high ambient temperatures. All packing units are binned for luminous flux, forward voltage and color to achieve the most homogenous light appearance in application. SAE and ECE color requirements for automobile application are available for color red. APPLICATIONS • Exterior lighting • Dashboard illumination • Tail-, Stop - and Turn Signals of motor vehicles • Replaces small incandescent lamps • Traffic signals and signs PARTS TABLE COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHNOLOGY TLWR8900 Red, φV = 3000 mlm (typ.) 45 ° AllnGaP on GaAs TLWY8900 Yellow, φV = 3000 mlm (typ.) 45 ° AllnGaP on GaAs PART Document Number 83212 Rev. 1.8, 09-Jun-06 www.vishay.com 1 TLWR/Y8900 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1), TLWR8900, TLWY8900 PARAMETER TEST CONDITION SYMBOL VALUE IR = 100 µA VR 10 V Tamb ≤ 85 °C IF 70 mA tp ≤ 10 µs IFSM 1 A Power dissipation PV 187 mW Junction temperature Tj 125 °C Tamb - 40 to + 110 °C Reverse voltage 2) DC Forward current Surge forward current Operating temperature range Tstg - 55 to + 110 °C t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Tsd 260 °C with cathode heatsink of 70 mm2 RthJA 200 K/W Storage temperature range Soldering temperature Thermal resistance junction/ ambient UNIT Note: 1) T amb = 25 °C unless otherwise specified 2) Driving the LED in reverse direction is suitable for a short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1), TLWR8900, RED TEST CONDITION SYMBOL MIN TYP. Total flux PARAMETER IF = 70 mA, RthJA = 200 °K/W φV 2000 3000 mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λd Peak wavelength IF = 70 mA, RthJA = 200 °K/W λp 624 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 45 deg 90 % of Total Flux Captured ϕ0.9V 75 Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 2.0 Reverse voltage IR = 10 µA VR 10 VR = 0, f = 1 MHz Cj Total included angle Junction capacitance 611 615 2.2 MAX 634 UNIT nm deg 2.7 V 20 V 17 pF Note: 1) Tamb = 25 °C unless otherwise specified OPTICAL AND ELECTRICAL CHARACTERISTICS1), TLWY8900, YELLOW TEST CONDITION SYMBOL MIN TYP. Total flux PARAMETER IF = 70 mA, RthJA = 200 °K/W φV 2000 3000 mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λd Peak wavelength IF = 70 mA, RthJA = 200 °K/W λp 594 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 45 deg 90 % of Total Flux Captured ϕ0.9V 75 Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 1.83 Reverse voltage IR = 10 µA VR 10 VR = 0, f = 1 MHz Cj Total included angle Junction capacitance 585 590 2.1 MAX 597 UNIT nm deg 2.7 V 15 V 17 pF Note: 1) Tamb = 25 °C unless otherwise specified www.vishay.com 2 Document Number 83212 Rev. 1.8, 09-Jun-06 TLWR/Y8900 Vishay Semiconductors LUMINOUS FLUX CLASSIFICATION GROUP LIGHT INTENSITY [MCD] STANDARD MIN MAX D E F G H I K L M 2000 2500 3000 3500 4000 5000 6000 7000 8000 3000 3600 4200 4800 6100 7300 9700 12200 15000 COLOR CLASSIFICATION GROUP DOM. WAVELENGTH (NM) YELLOW 0 1 2 3 RED MIN. MAX. MIN. MAX. 585 587 589 592 588 591 594 597 611 614 616 618 622 634 Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each tube (there will be no mixing of two groups on each tube). In order to ensure availability, single brightness groups will be not orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped in any one tube. In order to ensure availability, single wavelength groups will not be orderable. TYPICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified 10000 100 Red, Yellow IF - Forward Current (mA) I F - Forward Current (mA) Red, Yellow 80 60 40 RthJA = 200 K/W 20 1000 18019 20 40 60 80 100 Tamb - AmbientTemperature (°C) Document Number 83212 Rev. 1.8, 09-Jun-06 0.02 0.1 100 1 10 1 0.01 120 Figure 1. Forward Current vs. Ambient Temperature Tamb ≤ 85 °C 0.05 0 0 tp/T = 0.01 18020 0.5 0.1 0.2 1 10 100 tp - Pulse Length (ms) Figure 2. Forward Current vs. Pulse Length www.vishay.com 3 TLWR/Y8900 Vishay Semiconductors 0° 10° 20° 100 I V rel - Relative Luminous Intensity 30° 90 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 16200 0.2 0 0.2 0.4 Angular Displacement I F - Forward Current (mA) 40° 80 60 50 40 30 20 10 0.6 Figure 3. Rel. Luminous Intensity vs. Angular Displacement 20176 I Vrel - Relative Luminous Intensity 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage 100 1.2 Red 1.1 90 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 70 60 50 40 30 20 10 0.1 0 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 0.0 570 580 590 600 610 620 630 640 650 660 670 λ - Wavelength (nm) Figure 4. Relative Intensity vs. Wavelength 1.2 1.1 Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 16008 λ - Wavelength (nm) Figure 5. Relative Intensity vs. Wavelength www.vishay.com 4 V F - Forward Voltage (V) 15975 Figure 7. Forward Current vs. Forward Voltage 10 I Vrel - Relative Luminous Intensity 16007 Yellow 80 I F - Forward Current (mA) 0.9 I Vrel - Relative Luminous Intensity Red 70 Red 1 0.1 0.01 1 15978 10 IF - Forward Current (mA) 100 Figure 8. Relative Luminous Flux vs. Forward Current Document Number 83212 Rev. 1.8, 09-Jun-06 TLWR/Y8900 Vishay Semiconductors 1.8 IV rel - Relative Luminous Intensity 10 Φ V rel - Relative Luminous Flux Yellow 1 0.1 0.01 1 10 100 IF - Forward Current (mA) 15979 Figure 9. Relative Luminous Flux vs. Forward Current 1.6 I F = 70 mA Red 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 18021 Figure 12. Rel. Luminous Flux vs. Ambient Temperature Red 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 40 - 20 0.1 1 18022 10 IF - Forward Current (mA) 100 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 15977 Figure 10. Specific Luminous Flux vs. Forward Current I F = 70 mA Yellow 1.8 Φ V rel - Relative Luminous Flux I Spec - Specific Luninous Flux 2.0 Figure 13. Rel. Luminous Flux vs. Ambient Temperature 230 Padsize 8 mm2 per Anode Pin 220 1.0 210 R thJA in K/W I Spec - Specific Luninous Flux Yellow 200 190 180 170 0.1 160 1 15981 10 I F - Forward Current (mA) 100 Figure 11. Specific Luminous Flux vs. Forward Current Document Number 83212 Rev. 1.8, 09-Jun-06 0 16009 50 100 150 200 250 Cathode Padsize in mm 2 300 Figure 14. Thermal Resistance Junction Ambient vs. Cathode Padsize www.vishay.com 5 TLWR/Y8900 Vishay Semiconductors 100 % Total Luminous Flux 90 80 70 60 50 40 30 20 10 0 0 16201 25 50 75 100 Total Included Angle (Degrees) 125 Figure 15. Percentage Total Luminous Flux vs. Total Included Angle for 90° emission angle PACKAGE DIMENSIONS IN MM 15984 www.vishay.com 6 Document Number 83212 Rev. 1.8, 09-Jun-06 TLWR/Y8900 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83212 Rev. 1.8, 09-Jun-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1