TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines high speed with high radiant power at wavelength of 850 nm. 94 8390 Features Applications • High modulation bandwidth • Extra high radiant power and radiant intensity e2 • Low forward voltage • Suitable for high pulse current operation • Standard package T-1¾ (∅ 5 mm) • Angle of half intensity ϕ = ± 10° • Peak wavelength λp = 850 nm • High reliability • Good spectral matching to Si photodetectors • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Infrared radiation source for CMOS cameras (illumination). High speed IR data transmission. Parts Table Part Remarks TSHG6200 MOQ: 4000 pc Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs Unit IFSM 1 A Power dissipation PV 250 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 300 K/W Soldering temperature Thermal resistance junction/ ambient Document Number 81078 Rev. 1.5, 28-Nov-06 t ≤ 5 sec, 2 mm from case www.vishay.com 1 TSHG6200 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition Symbol Min Typ. Max Unit 1.5 1.8 V IF = 100 mA, tp = 20 ms VF IF = 1 A, tp = 100 µs VF 2.3 V TKVF - 2.1 mV/K Temp. coefficient of VF IF = 100 mA Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie 10 μA 400 mW/sr 125 80 160 pF 1600 mW/sr Radiant power IF = 100 mA, tp = 20 ms φe 50 mW Temp. coefficient of φe IF = 100 mA TKφe - 0.35 %/K ϕ ± 10 deg Peak wavelength IF = 100 mA λp 850 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temp. coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc 20 MHz ∅ 3.7 mm Angle of half intensity Virtual source diameter Typical Characteristics Tamb = 25 °C, unless otherwise specified 200 175 250 200 RthJA 150 100 50 IF - Forward Current (mA) PV - Power Dissipation (mW) 300 150 125 100 75 50 25 0 0 0 16647 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 RthJA 0 16964 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 2. Forward Current vs. Ambient Temperature Document Number 81078 Rev. 1.5, 28-Nov-06 TSHG6200 Vishay Semiconductors 1000 Tamb < 50° tP/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 1 0.5 100 0.01 0.1 0.1 1.0 10 100 1 tP - Pulse Duration (ms) 16031 10 1000 Figure 6. Radiant Power vs. Forward Current 1.25 - Relative Radiant Power 1000 100 tP = 100 µs tP/T = 0.001 e, rel 10 1.0 0.75 0.5 0.25 0 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 800 900 850 - Wavelength (nm) 16972 Figure 7. Relative Radiant Power vs. Wavelength Figure 4. Forward Current vs. Forward Voltage 4.6 4.4 15 899 1000 Ie - Radiant Intensity (mW/sr) 100 IF - Forward Current (mA) 16971 Figure 3. Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 e- 0.2 100 4.1 3.9 1.85 1.65 R=1.6 1.5 100 7.6 7.4 GND 16.3 15.7 8.9 8.7 VCC 10 OUT 1 0.45 0.35 5.3 5.1 0.1 1 16032 10 100 1000 2.05 1.95 8.1 7.9 Direction of Pulling Out IF - Forward Current (mA) Figure 5. Radiant Intensity vs. Forward Current Document Number 81078 Rev. 1.5, 28-Nov-06 1.6 1.4 Figure 8. Relative Radiant Intensity vs. Angular Displacement www.vishay.com 3 TSHG6200 Vishay Semiconductors Package Dimensions in mm 95 10917 www.vishay.com 4 Document Number 81078 Rev. 1.5, 28-Nov-06 TSHG6200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81078 Rev. 1.5, 28-Nov-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1