TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. 94 8389 Features • • • • • • • • • • • Applications Peak wavelength: λp = 850 nm High reliability High radiant power e2 High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Standard package: T-1¾ (∅ 5 mm) Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission Parts Table Part Remarks TSHG6200 MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 270 K/W Junction temperature Soldering temperature Thermal resistance junction/ ambient Document Number 81078 Rev. 1.6, 04-Dec-07 t ≤ 5 s, 2 mm from case www.vishay.com 1 TSHG6200 Vishay Semiconductors 125 - RthJA = 270 K/W IF - Forward Current (mA) PV - Power Dissipation (mW) 200 150 100 50 - RthJA = 270 K/W 75 50 25 0 0 20112 100 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature 0 10 20 30 40 50 60 70 80 90 100 20113 Tamb - Ambient Temperature (°C) Figure 2. Forward Current Limit vs. Ambient Temperature Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition Symbol IF = 100 mA, tp = 20 ms VF Min Typ. Max Unit 1.5 1.8 V IF = 1 A, tp = 100 µs VF 2.3 V Temp. coefficient of VF IF = 1 mA TKVF - 1.8 mV/K Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie 1600 IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 10 deg Peak wavelength IF = 100 mA λp 850 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temp. coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 20 MHz ∅ 3.7 mm Junction capacitance Radiant intensity Radiant power Temp. coefficient of φe Angle of half intensity Cut-off frequency Virtual source diameter www.vishay.com 2 10 μA 400 mW/sr 125 80 160 pF mW/sr Document Number 81078 Rev. 1.6, 04-Dec-07 TSHG6200 Vishay Semiconductors 1000 Tamb < 50° tP/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 0.5 100 0.01 0.1 0.1 1.0 10 100 tP - Pulse Duration (ms) 16031 1 10 100 Figure 6. Radiant Power vs. Forward Current 1.25 - Relative Radiant Power 1000 100 tP = 100 µs tP/T = 0.001 0.75 0.5 e, rel 10 1.0 0.25 0 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 800 900 850 - Wavelength (nm) 16972 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Power vs. Wavelength 0° 10° 20° Ie rel - Relative Radiant Intensity 100 10 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1000 Ie - Radiant Intensity (mW/sr) 1000 IF - Forward Current (mA) 16971 Figure 3. Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 1 e- 0.2 100 80° 0.1 1 16032 10 100 1000 IF - Forward Current (mA) Figure 5. Radiant Intensity vs. Forward Current Document Number 81078 Rev. 1.6, 04-Dec-07 0.6 0.4 0.2 0 15989 Figure 8. Relative Radiant Intensity vs. Angular Displacement www.vishay.com 3 TSHG6200 Vishay Semiconductors Package Dimensions in millimeters 95 10917 www.vishay.com 4 Document Number 81078 Rev. 1.6, 04-Dec-07 TSHG6200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81078 Rev. 1.6, 04-Dec-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1