TOSHIBA TPCA8006-H

TENTATIVE
TPCA8006-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII)
TPCA8006-H
Switching Regulator Applications
Motor Drive Applications
High forward transfer admittance: |Yfs| = 15 S (typ.)
Low leakage current: IDSS = 100 µA (max) (V DS = 100 V)
•
Enhancement mode: V th = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA)
0.95±0.05
•
•
0.15±0.05
4
1
: R DS (ON) = 41 mO (typ.) (V G =10V, ID=9A)
0.05 M A
5
5.0±0.2
0.05 S
S
1
4.25±0.2
Symbol
Rating
Unit
Drain-source voltage
V DSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
V DGR
100
V
Gate-source voltage
V GSS
±20
V
JEDEC
?
ID
18
A
JEITA
?
IDP
36
PD
45
W
PD
2.8
W
PD
1.6
W
EA S
224
mJ
IAR
18
A
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
(Note 1)
Pulsed (Note 1)
Drain power dissipation
(Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
8
1,2,3:SOURCE
5,6,7,8:DRAIN
TOSHIBA
A
3.5±0.2
Characteristics
4
0.6±0.1
Maximum Ratings (Ta = 25°C)
0.595
0.166±0.05
High speed switching
Low drain-source ON resistance
0.4±0.1
1.1±0.2
Small footprint due to small and thin package
•
•
6.0±0.3
•
1.27
8
5.0±0.2
0.5±0.1
Unit: mm
5 0.8±0.1
4:GATE
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
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2004-03-08
TENTATIVE
TPCA8006-H
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25℃)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-c)
2.78
°C/W
Rth (ch-a)
44.6
°C/W
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
TPCA
8006-H
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 0.8 mH, RG = 25 Ω, IAR = 18 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
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2004-03-08
TENTATIVE
TPCA8006-H
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
V GS = ±20 V, V DS = 0 V


±100
nA
Drain cut-OFF current
IDSS
V DS = 100 V, V GS = 0 V


100
µA
V (BR) DSS
ID = 10 mA, V GS = 0 V
100


V
V th
V DS = 10 V, ID = 1 mA
3.0

5.0
V
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
V GS = 10 V , ID = 9 A

41
67
mΩ
Forward transfer admittance
|Yf s |
V DS = 10 V , ID = 9 A
7.5
15

S
Input capacitance
Ciss

780


17


390


(3)


(13)


2


13


12

Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
Turn-ON time
ton
Fall time
tf
Turn-OFF time
toff
V OUT
4.7 Ω
Switching time
Total gate charge
(gate-source plus gate-drain)
ID = 9 A
V GS 10 V
0V
RL = 5.6Ω
Rise time
V DS = 10 V , V GS = 0 V , f = 1 MHz
V DD ∼
− 50 V
Duty <
1%,
t
=
10
µs
=
w
Qg
ns
Gate-source charge 1
Qgs1

5.6

Gate-drain (“miller”) charge
Qgd

4.0

Gate switch charge
QSW

6.9

V DD ∼
− 80 V, V GS = 10 V , ID = 18 A
pF
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP



36
A


−1.7
V
V DSF
IDR = 18 A, V GS = 0 V
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2004-03-08
TENTATIVE
TPCA8006-H
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire sys tem , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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2004-03-08