TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8005-H TENTATIVE High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 24 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 46S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) 0.15±0.05 4 1 5.0±0.2 0.166±0.05 0.05 S S 1 0.6±0.1 Maximum Ratings (Ta = 25°C) Rating A 0.95±0.05 Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Symbol 0.595 1.1±0.2 4 3.5±0.2 • 5.0±0.2 6.0±0.3 Small footprint due to small and thin package Characteristics 0.05 M A 5 8 • • 0.4±0.1 1.27 0.5±0.1 4.25±0.2 Unit 8 5 1,2,3：SOURCE 5,6,7,8：DRAIN 0.8±0.1 4：GATE Drain-source voltage VDSS Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V JEDEC ― Gate-source voltage VGSS ±20 V JEITA ― (Note 1) ID 30 IDP 90 A TOSHIBA Pulsed (Note 1) PD 45 W PD 2.8 W PD 1.6 W EAS 117 mJ IAR 30 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 30 V 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-11-13 TPCA8005-H Thermal Characteristics ＴＥＮＴＡＴＩＶＥ Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8005-H Type Lot No. ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V， Tch = 25°C (initial)， L = 0.1 mH， RG = 25 Ω， IAR = 30 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-11-13 TPCA8005-H TENTATIVE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage IGSS VGS = ±16 V, VDS = 0 V ±10 µA µA 10 30 V (BR) DSX ID = 10 mA, VGS = −20 V 15 VDS = 10 V, ID = 1 mA 1.1 2.3 VGS = 4.5 V, ID = 15 A 9.5 13 VGS = 10 V, ID = 15 A 6.8 9 VDS = 10 V, ID = 15 A 23 46 1395 VDS = 10 V, VGS = 0 V, f = 1 MHz 140 525 3 9 |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr 8 Duty < = 1%, tw = 10 µs 27 Qg VDD ∼ − 24 V, VGS = 10 V, ID = 30 A 24 VDD ∼ − 24 V, VGS = 5 V, ID = 30 A Gate-source charge 1 Qgs1 13 4.7 Gate-drain (“miller”) charge Qgd 5.6 Gate switch charge QSW 7.7 VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 10 V, ID = 30 A V V mΩ S pF ns tf toff 0V 4.7 Ω Switching time ID = 15 A VOUT 10 V RL =1.0Ω VGS ton Total gate charge (gate-source plus gate-drain) Unit ID = 10 mA, VGS = 0 V Forward transfer admittance Turn-OFF time Max VDS = 30 V, VGS = 0 V RDS (ON) Fall time Typ. IDSS Drain-source ON resistance Turn-ON time Min V (BR) DSS Vth Rise time Test Condition nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 90 A −1.2 V VDSF IDR = 30 A, VGS = 0 V 3 2003-11-13 TPCA8005-H TENTATIVE RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 4 2003-11-13