TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the normally closed photorelay with 350-V withstanding voltage. · Normally closed device · Peak off-state voltage: 350 V (min) · Trigger LED current: 3 mA (max) · On-state current: 100 mA (max) · On-state resistance: 50 Ω (max) · Isolation voltage: 2500 Vrms (min) Pin Configuration (top view) TLP4222G JEDEC ― JEITA ― TOSHIBA TLP4222G-2 11-5B2 Weight: 0.26 g (typ.) 1 4 1 8 2 3 2 7 3 6 4 5 1: Anode 2: Cathode 3: Drain 4: Drain 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 1 JEDEC ― JEITA ― TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 2002-12-26 TLP4222G,TLP4222G-2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA DIF/°C -0.5 mA/°C Peak forward current (100 ms pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 350 V ION 100 mA DION/°C -1.0 mA/°C Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Forward current LED Forward current derating (Ta > = 25°C) Off-state output terminal voltage TLP4222G Detector On-state current TLP4222G-2 One channel operation Two channel operations TLP4222G On-state current derating (Ta > = 25°C) TLP4222G-2 One channel operation Two channel operations Junction temperature Isolation voltage (AC, 1 min, R.H. < = 60%) (Note 1) Note 1: For TLP4222G, Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. For TLP4222G-2, Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ¾ ¾ 280 V Forward current IF 5 ¾ 25 mA On-state current ION ¾ ¾ 100 mA Operating temperature Topr -20 ¾ 65 °C Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ¾ ¾ 10 mA Capacitance CT V = 0, f = 1 MHz ¾ 30 ¾ pF Off-state current IOFF VOFF = 350 V, IF = 5 mA ¾ ¾ 1 mA Capacitance COFF V = 0, f = 1 MHz, IF = 5 mA ¾ 30 ¾ pF 2 2002-12-26 TLP4222G,TLP4222G-2 Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFC IOFF = 10 mA ¾ 1 3 mA Return LED current IFT ION = 100 mA 0.1 ¾ ¾ mA On-state resistance RON ION = 100 mA ¾ 30 50 W Min Typ. Max Unit 0.8 ¾ pF W Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Isolation resistance Test Condition CS VS = 0, f = 1 MHz ¾ RS VS = 500 V, R.H. < = 60% 10 5 ´ 10 10 ¾ 2500 ¾ ¾ AC, 1 s, in oil ¾ 5000 ¾ DC, 1 min, in oil ¾ 5000 ¾ Vdc Min Typ. Max Unit ¾ 0.25 0.5 ms ¾ 0.5 1 ms AC, 1 min Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time Test Condition RL = 200 W VDD = 20 V, IF = 5 mA tOFF (Note 2) Note 2: Switching time test circuit IF 1 1b 8 RL VDD IF VOUT 2 VOUT 7 10% tON IF 3 1a 6 RL 90% tOFF VDD IF VOUT 4 VOUT 5 10% tON 3 90% tOFF 2002-12-26 TLP4222G,TLP4222G-2 IF – Ta ION – Ta (mA) 160 Allowable on-state current ION 80 Allowable forward current IF (mA) 100 60 40 20 0 -20 0 20 40 60 80 100 120 80 40 0 -20 120 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IF – VF 100 Ta = 25°C Forward current IF (mA) 30 10 3 1 0.3 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 VF 1.6 1.8 (V) 4 2002-12-26 TLP4222G,TLP4222G-2 RON – Ta IFC – Ta 50 5 ION = 100 mA (mA) t<1s 40 t<1s 4 IFC 30 3 Trigger LED current On-state resistance RON (W) ION = 100 mA 20 10 0 2 1 0 -40 -20 Ambient temperature Ta (°C) 0 IOFF – Ta 80 100 ION – VON Ta = 25°C (mA) 300 IF = 5 mA 100 On-state current ION (nA) 60 150 VOFF = 350 V Off-state current IOFF 40 Ambient temperature Ta (°C) 1000 30 10 3 1 0 20 20 40 60 80 100 50 0 -50 -100 -150 -4 100 -3 Ambient temperature Ta (°C) -2 -1 0 On-state voltage 1 2 VON (V) 3 4 tON, tOFF – IF 3000 tON, tOFF – Ta Ta = 25°C 3000 VDD = 20 V, RL = 200 W IF = 5 mA 100 30 10 1 tOFF 3 5 10 Input current 30 IF 50 (ms) tON, tOFF tON 300 1000 300 Switching time Switching time tON, tOFF (ms) VDD = 20 V, RL = 200 W 1000 100 tON 100 30 10 -40 300 (mA) tOFF -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2002-12-26 TLP4222G,TLP4222G-2 RESTRICTIONS ON PRODUCT USE 020704EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-12-26