TPCA8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(π-MOSV) TPCA8009-H TENTATIVE High Speed and High Efficiency DC-DC Converters • Small footprint due to small and thin package • High speed switching • Small gate charge: Qg = 10nC (typ.) • Low drain-source ON resistance: RDS (ON) = • High forward transfer admittance: |Yfs| = • Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID = 1 mA) Unit: mm 0.4±0.1 1.27 0.5±0.1 5.0±0.2 6.0±0.3 240mΩ (typ.) 0.15±0.05 S (typ.) 4 1 0.166±0.05 0.05 S Unit Drain-source voltage VDSS 150 V Drain-gate voltage (RGS = 20 kΩ) VDGR 150 V Gate-source voltage VGSS ±20 V (Note 1) ID 7 Pulsed (Note 1) IDP 14 PD 45 W PD 2.8 W PD 1.6 W EAS 34 mJ IAR 7 A EAR 1.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) A 0.6±0.1 Rating 1.1±0.2 4 3.5±0.2 S Symbol DC A 0.95±0.05 1 Drain current 0.595 5.0±0.2 Maximum Ratings (Ta = 25°C) Characteristics 0.05 M A 5 8 4.25±0.2 8 5 1,2,3：SOURCE 5,6,7,8：DRAIN 0.8±0.1 4：GATE JEDEC ― JEITA ― TOSHIBA ― Weight: 0.08 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-4-11 TPCA8009-H Thermal Characteristics TENTATIVE Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8009-H Type Lot No. ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 1 mH， RG = 25 Ω， IAR = 7 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2004-4-11 TPCA8009-H TENTATIVE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 150 V, VGS = 0 V 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 150 V (BR) DSX ID = 10 mA, VGS = -5 V 150 V (BR) DSX ID = 10 mA, VGS = -20 V 100 Vth VDS = 10 V, ID = 1mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5A 0.23 (0.35) Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.5A TBD TBD S Input capacitance Ciss 600 Reverse transfer capacitance Crss 20 Output capacitance Coss 220 (7) (17) Drain-source breakdown voltage Gate threshold voltage tr Turn-ON time ton 4.7 Ω Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff ID = 3.5 A VOUT VGS 10 V 0V RL = 21Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ∼ − 75V < Duty = 1%, tw = 10 µs Qg pF ns (13) (70) (10) (7.6) Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd (2.4) Gate switch charge QSW (3.7) VDD ∼ − 120 V, VGS = 10 V, ID = 7A V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 14 A -2.0 V VDSF IDR = 7A, VGS = 0 V 3 2004-4-11 TPCA8009-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 4 2004-4-11