BYT77.BYT78 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Controlled avalanche characteristics Applications 94 9588 Fast ”soft recovery” rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Test Conditions Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy Type BYT77 BYT78 tp=10ms, half sinewave Tamb 45°C x Symbol VR VR IFSM IFAV Tj=Tstg Value 800 1000 100 3 –65...+175 Unit V V A A °C ER 15 mJ Value 25 70 Unit K/W K/W I(BR)R=400mA, inductive load L=120mH Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 37.5mm Symbol RthJA RthJA Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Document Number 86034 Rev. 3, 07-Dec-99 Test Conditions IF=3A VR VR, Tj=150°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR trr Min Typ 1.0 1 60 Max 1.1 5 150 300 Unit V mA mA ns www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYT77.BYT78 Vishay Telefunken R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 40 T j – Junction Temperature (° C ) 240 30 20 l l 10 200 VR RM 160 VR 120 80 RthJA=70K/W 40 TL=constant 0 0 5 10 15 20 0 25 30 l – Lead Length ( mm ) 94 9466 0 Figure 1. Max. Thermal Resistance vs. Lead Length 200 400 600 800 1000 Reverse / Repetitive Peak Reverse Voltage ( V ) 94 9467 Figure 4. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage I FAV– Average Forward Current ( A ) 1000 I R – Reverse Current ( mA ) 2.0 1.6 1.2 0.8 v f 20kHz 0.4 10 1 RthJA=70K/W PCB 0 0 40 VR = VR RM 0.1 80 120 160 200 Tamb – Ambient Temperature ( °C ) 94 9468 0 40 80 120 160 200 Tj – Junction Temperature ( °C ) 94 9469 Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 5. Reverse Current vs. Junction Temperature 100 3 2 v 1 Tj = 175°C IF – Forward Current ( A ) 4 I FAV– Average Forward Current ( A ) Scattering Limit 100 f 20kHz 10 1 Tj = 25°C 0.1 RthJA=25K/W L=10mm 0 0.01 0 94 9471 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 0 94 9472 0.6 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) Figure 6. Max. Forward Current vs. Forward Voltage Document Number 86034 Rev. 3, 07-Dec-99 BYT77.BYT78 Vishay Telefunken CD – Diode Capacitance ( pF ) 80 60 40 20 f = 470kHz Tj = 25°C 0 0.1 94 9470 1 10 100 VR – Reverse Voltage ( V ) Figure 7. Typ. Diode Capacitance vs. Reverse Voltage Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification ∅ 4.3 max. technical drawings according to DIN specifications ∅ 1.35 max. 26 min. Document Number 86034 Rev. 3, 07-Dec-99 4.2 max. 26 min. 94 9587 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYT77.BYT78 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86034 Rev. 3, 07-Dec-99